Proceedings of the 9th European Microwave Integrated Circuits Conference A High-Linearity Watt-Level 2.45-GHz CMOS Power Amplifier with Adaptive Bias and Integrated Diode Linearizer Zhixiong Ren2, Lanqi Liu, Kefeng Zhang1, Dongsheng Liu, Zhenglin Liu, Xuecheng Zou Huazhong University of Science and Technology School of Optical and Electronic Information Wuhan, China 1 zhangkefeng-hust.edu.cn, 2zh

Proceedings of the 9th European Microwave Integrated Circuits Conference Observation of multiple conduction paths in boron doped diamond structures Niall Tumilty, Alex Pakpour-tabrizi and Richard B. Jackman* London Centre for Nanotechnology and Department of Electronic and Electrical Engineering, University College London 17-19 Gordon Street, London, WC1H 0AH, UK Richard Lang Diamond Microwave D

Proceedings of the 9th European Microwave Integrated Circuits Conference A 1.16 pJ/bit 80 Gb/s 211-1 PRBS Generator in SiGe Bipolar Technology Ahmed Gharib, Armin Talai, Robert Weigel, and Dietmar Kissinger Institute for Electronics Engineering, University for Erlangen-Nuremberg Cauerstr. 9, 91058, Erlangen, Germany Email: ahmed.radwan-fau.de Abstract--A 211 -1, 80 Gb/s pseudo-random bit sequence

Proceedings of the 9th European Microwave Integrated Circuits Conference Ferrite LTCC edge-guided circulator Shicheng Yang , Didier Vincent , Joey R. Bray , and Langis Roy Universit´ e § de Saint-Etienne, Jean Monnet, F-42000, Saint-Etienne, France Laboratory LT2C, F-42000, Saint-Etienne, France Email: shicheng.yang-telecom-st-etienne.fr Email: vincentd-univ-st-etienne.fr of Electrical and C

Proceedings of the 9th European Microwave Integrated Circuits Conference Gate Waveform Effects on High-Efficiency PA Design: an Experimental Validation Gianni Bosi, Antonio Raffo, Giorgio Vannini Università di Ferrara Department of Engineering Ferrara, Italy Abstract-- In this paper, an experimental validation about the benefit of the input harmonic manipulation on the performance of a microwave

Proceedings of the 9th European Microwave Integrated Circuits Conference A Wideband 65nm CMOS Transformer-Coupled Power Amplifier for WiGig Applications Aurélien Larie1,2, Eric Kerhervé1, Baudouin Martineau2, Didier Belot2 1 University of Bordeaux, IMS Laboratory, CNRS UMR 5218, IPB, 351 crs de Libération, 33405 Talence, France 2 STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex imped

Proceedings of the 9th European Microwave Integrated Circuits Conference An Enhanced Phase Shifted Transmitter based on 2ndHT GaN-PAs with Energy Recovery Circuit R. Giofr´ , L. Piazzon, R. Danieli, A. Spinosa, P. Colantonio and F. Giannini e E.E.Dept. University of Roma Tor Vergata, Via del Politecnico 1, 00133 ­ Roma, Italy Email: giofr-ing.uniroma2.it Abstract--Phase Shifted Transmitter (PST)

Proceedings of the 9th European Microwave Integrated Circuits Conference 79GHz CMOS Power Amplifier Using Temperature Compensation Bias Mizuki Motoyoshi, Kyoya Takano, Takeshi Yoshida, Kosuke Katayama, Shuhei Amakawa and Minoru Fujishima Graduate School of Advanced Sciences of Matter Hiroshima University Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan mizuki-dsl.hiroshima-u.ac.jp Abstrac

Proceedings of the 9th European Microwave Integrated Circuits Conference Trap Characterization of Microwave GaN HEMTs Based on Frequency Dispersion of the OutputAdmittance C. Potier, A. Martin, M. Campovecchio, S. Laurent, R. Quere C²S² department XLIM laboratory Limoges, France clement.potier-xlim.fr Abstract-- This paper presents a characterization method of traps in GaN HEMTs, based on the fre

Proceedings of the 9th European Microwave Integrated Circuits Conference 5-GHz Band SiGe HBT Linear Power Amplifier IC With Novel CMOS Active Bias Circuit For WLAN Applications Xin Yang1, Tsuyoshi Sugiura2, Norihisa Otani2, Tadamasa Murakami2, Eiichiro Otobe2, Toshihiko Yoshimasu1 1 The Graduate School of Information, Production and Systems, Waseda University 2-7 Hibikino Wakamatsu-ku, Kitakyush