Proceedings of the 18th European Microwave Integrated Circuits Conference Wideband Automated Tuning of Ka-Band Dual Input Doherty MMIC PA using Bayesian Optimization # # # Mattia Mengozzi , Alberto Maria Angelotti , Gian Piero Gibiino , * # - * # Christoph Schulze , Corrado Florian , Paolo Colantonio , Olof Bengtsson , Alberto Santarelli # * Dept. DEI, University of Bologna, Italy Ferdinand

Proceedings of the 18th European Microwave Integrated Circuits Conference The Fastest CMOS Single-Channel 5-bit Flash ADC Operating at 18.5 GS/s in 22 nm FD-SOI Nima Lotfi, Philipp Scholz, Friedel Gerfers Chair Mixed Signal Circuit Design, Technische Universität Berlin, Germany nima.lotfi-tu-berlin.de Vref,m R Vref,m-1 m=31 clkin+ clkinT&H Vout+ VoutclkbTH Q31 clkFlash Vbb+ Comp 30 Q30 Vbb-

Proceedings of the 18th European Microwave Integrated Circuits Conference Normally-off AlN/GaN HEMTs with a DIBL of 1.15 mV/V for RF Applications Mahmud Dwidar#*, Afesomeh Ofiare#, Edward Wasige#, Abdullah Al-Khalidi# # High Frequency Electronics Group, James Watt School of Engineering, University of Glasgow, UK * Institute of Nanoscience and Nanotechnology, Kafrelsheikh University, Egypt m.dwid

Proceedings of the 18th European Microwave Integrated Circuits Conference Design Methodologies for mm-Wave Transceivers in Bi(CMOS) for Next-Generation Wireless and Optical Applications Domenico Pepe Renesas Design Zurich AG, Switzerland domenico.pepe.nx-renesas.com Abstract ? Advancements in silicon technology have enabled the design of millimeter wave integrated circuits front-end capable of o

Proceedings of the 18th European Microwave Integrated Circuits Conference A 272 GHz InP HBT Direct-Conversion Transmitter with 14.1 dBm Output Power Utku Soylu# , Amirreza Alizadeh# , Ahmed S. H. Ahmed# , Munkyo Seo* , Mark J. W. Rodwell# # Department of Electrical and Computer Engineering, University of California, Santa Barbara, USA of Electrical and Computer Engineering, Sungkyunkwan Universi

Proceedings of the 18th European Microwave Integrated Circuits Conference A novel reconfigurable RF switch based on ferroelectric hafnium oxide FeFET fabricated in 22 nm FDSOI technology 1 1 1 1 Sukhrob Abdulazhanov , Dang Khoa Huynh , Quang Huy Le , Thomas Kämpfe , Gerald Gerlach 2 1 Fraunhofer IPMS, Germany 2 TU Dresden, Germany sukhrob.abdulazhanov-ipms.fraunhofer.de, gerald.gerlach-tu-

Proceedings of the 18th European Microwave Integrated Circuits Conference Phase Distortion Reduction of Flat Gain Envelope Tracked GaN RF PAs Morten Olavsbråten, Anders Ivar Hagen, Hans-Robert Løhren Norwegian University of Science and Technology (NTNU), Norway {morten.olavsbraten, anders.hagen}-ntnu.no, hrlohren-gmail.com Abstract ? This paper demonstrates a method for reducing the phase distort

Proceedings of the 18th European Microwave Integrated Circuits Conference Accurate Modelling of GaN HEMT Capacitances in the Framework of the ASMHEMT Model Sayed Ali Albahrani# , Dirk Schwantuschke# , Sourabh Khandelwal* # Fraunhofer Institute for Applied Solid State Physics (IAF), Freiburg, Germany of Engineering, Macquarie University, Sydney, Australia * School Abstract ? Results of pulsed I

Proceedings of the 18th European Microwave Integrated Circuits Conference A 12 GS/s RF-Sampler Employing Inductive Peaking in 22 nm FD-SOI CMOS Enne Wittenhagen, Patrick Kurth, Nima Lotfi, Urs Hecht, Julius Edler, Philipp Scholz, Friedel Gerfers Technische Universität Berlin, Mixed Signal Circuit Design, Germany Wittenhagen-tu-berlin.de Abstract ? This paper presents a 12 GS/s RF-sampler in 22 n

Proceedings of the 18th European Microwave Integrated Circuits Conference Bondwire Integration Challenges in E-band Systems: from PCB to Die Level #+ # # * * # Sherif R. Zahran , Antonio Alati , Raffaele De Marco , Stefano Moscato , Alessandro Fonte , G. Amendola , + # Philippe Ferrari , Luigi Boccia # * MAIC-Lab, University of Calabria, Italy Microwave Components R&D laboratories, SIAE M