Proceedings of the 18th European Microwave Integrated Circuits Conference Thermal Transient Measurements of GaN HEMT Structures by Electrical Measurements Tobias Kristensen# , Andreas Divinyi* , Johan Bremer# , Torbj¨orn M.J. Nilsson* , Mattias Thorsell#* # Chalmers University of Technology, Gothenburg, Sweden * Saab AB, Stockholm, Sweden tobias.kristensen-chalmers.se measurement instruments. F

Proceedings of the 18th European Microwave Integrated Circuits Conference A Broadband LNA and Sub-Harmonic Mixer Based Multi-Mode RX in 22nm CMOS Soumya Gupta*, Benjamin Jann*, Mostafa Essawy, Kareem Rashed, Arun Natarajan HSIC Lab, Oregon State University, USA {guptasou, jannb, essawym, rashedk, nataraja}-oregonstate.edu making the LO design and layout less sensitive to parasitics. The LO genera

Proceedings of the 18th European Microwave Integrated Circuits Conference V- Through W-Band GaN Active Circulator Anthony Romano, Timothy Sonnenberg, Laila Marzall, Zoya Popovic University of Colorado Boulder, USA {Anthony.Romano, Zoya}-colorado.edu P3 Abstract ? This paper presents an active circulator designed to operate from 50?110 GHz implemented in a 40-nm HEMT GaN MMIC process. Three ampl

Proceedings of the 18th European Microwave Integrated Circuits Conference A 75-140 GHz Frequency Quadrupler with Milli-Watt Level Output Power in 22nm FDSOI # # $ # Ahmed Elmenshawi , Muhammad Waleed Mansha , Sriram Muralidharan , Mona M. Hella # Rensselaer Polytechnic Institute, USA $ Analog Devices Inc., USA {elmena, hellam}-rpi.edu Abstract ? This paper presents an ultra-wideband frequen

Proceedings of the 18th European Microwave Integrated Circuits Conference A D-Band Low-Noise-Amplifier in SiGe BiCMOS with Broadband Multi-Resonance Matching Networks Guglielmo De Filippi, Lorenzo Piotto, Andrea Bilato, Andrea Mazzanti Department of Electrical, Computer and Biomedical Engineering, University of Pavia, Italy Similar issues also affect the amplifier linearity, making difficult to r

Proceedings of the 18th European Microwave Integrated Circuits Conference Fully Integrated Built-In Self Test of Millimeter-Wave LNA based on Avalanche Noise Diodes in 130 nm SiGe BiCMOS Technology Guendalina Simoncini, Valentina Palazzi, Giulia Orecchini, Federico Alimenti Department of Engineering, University of Perugia, Italy guendalina.simoncini-studenti.unipg.it, valentina.palazzi-unipg.it,

Proceedings of the 18th European Microwave Integrated Circuits Conference SPST and SPDT 60 GHz Travelling-Wave Switches in 22 nm FD-SOI Quentin Courte, Martin Rack, Dimitri Lederer, Jean-Pierre Raskin Universit´e Catholique de Louvain, Belgium { quentin.courte, martin.rack, dimitri.lederer, jean-pierre.raskin }-uclouvain.be Abstract ? This work presents 60 GHz travelling-wave Single-Pole Single-T

Proceedings of the 18th European Microwave Integrated Circuits Conference Comparison of the low noise performance of GaN HEMTs and MIS-HEMTs at cryogenic temperatures Mohamed Aniss Mebarki #, Ragnar Ferrand-Drake Del Castillo *, Erik Sundin #, Denis Meledin #, Mattias Thorsell *, Niklas Rorsman *, Victor Belitsky #, Vincent Desmaris # # Group for Advanced Receiver Development (GARD), Department

Proceedings of the 18th European Microwave Integrated Circuits Conference A Continuously Adjustable True Time Delay for D-Band Timed Antenna Arrays Manuel Koch1 , Florian Probst2 , Sascha Breun3 , Robert Weigel4 Institute for Electronics Engineering, Friedrich-Alexander-Universit¨at Erlangen-N¨urnberg, Germany {1 manuel.koch, 2 florian.probst,3 sascha.breun,4 robert.weigel}-fau.de Abstract ? Thi

Proceedings of the 18th European Microwave Integrated Circuits Conference TCAD analysis of GaN HEMT AC parameters through accurate solution of trap rate equations E. Catoggio, S. Donati Guerrieri, F. Bonani Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, Italy {eva.catoggio, simona.donati, fabrizio.bonani}-polito.it the local sensitivity, showing the areas of the device w