Proceedings of the 7th European Microwave Integrated Circuits Conference Evaluation of De-embedding Technique Accuracy Depending on De-embedding Patterns for CMOS Circuits up to 110 GHz Naoko Ono1,3, Kyoya Takano2, Mizuki Motoyoshi2, Kosuke Katayama2, and Minoru Fujishima2 1 Wireless System Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-k

Proceedings of the 7th European Microwave Integrated Circuits Conference Frequency-Independent Smart Interference Suppression for Multi-Standard Transceivers Erwin J.G. Janssen, Dusan Milosevic, Peter G.M. Baltus and Arthur H.M. van Roermund Eindhoven University of Technology Department of Electrical Engineering Mixed-signal Microelectronics Email: E.J.G.Janssen-tue.nl Hooman Habibi Eindhoven Un

Proceedings of the 7th European Microwave Integrated Circuits Conference Dual Metamaterials Substrate Integrated Leaky-Wave Structures for Antenna Applications Nasimuddin, Zhi Ning Chen*, and Xianming Qing RF and Optical Department Institute for Infocomm Research Singapore *Concurrently with Department of Electrical and Computer Engineering, National University of Singapore e-mail: nasimuddin-i2r

Proceedings of the 7th European Microwave Integrated Circuits Conference Design and Modeling of InP DHBT Power Amplifiers at Millimeter-Wave Frequencies Lei Yan and Tom K. Johansen Department of Electrical Engineering Technical University of Denmark 2800 Kgs. Lyngby, Denmark Email: tkj-elektro.dtu.dk I. I NTRODUCTION The 71-76 and 81-86 GHz bands, also known as the E-band, are permitted worldwid

Proceedings of the 7th European Microwave Integrated Circuits Conference Device Modeling with Small-Signal X-parameters measured with a special PNA-X configuration for the Study of Non-linear Interactions A. M. Pelaez-Perez and J. I. Alonso Departamento de Señales, Sistemas y Radiocomunicaciones Universidad Politécnica de Madrid Madrid, Spain apelaez-gmr.ssr.upm.es M. Fernandez-Barciela Departam

Proceedings of the 7th European Microwave Integrated Circuits Conference Optimization of AlGaN/GaN HEMT Schottky contact for Microwave Applications S.Bouzid-Driad, H. Maher, M. Renvoise, P. Frijlink, M. Rocchi OMMIC Limeil-Brévannes, Ile de France Samira.bouzid-ed.univ-lille1.fr P.frijlink-ommic.com Abstract--Platinum (Pt/Ti/Pt/Au) gate contact of AlGaN/GaN high electron mobility transistor (HEMT

Proceedings of the 7th European Microwave Integrated Circuits Conference An H-Band Low-Noise Amplifier MMIC in 35 nm Metamorphic HEMT Technology Rainer Weber1, Volker Hurm1, Hermann Massler1, Ernst Weissbrodt1, Axel Tessmann1, Arnulf Leuther1, Tapani Närhi2, Ingmar Kallfass1,3 1 Fraunhofer-Institute for Applied Solid State Physics (IAF) Tullastrasse 72, 79108 Freiburg, Germany E-mail: rainer.web

Proceedings of the 7th European Microwave Integrated Circuits Conference Wideband Spice-Compatible Modeling of Packages Marek Schmidt-Szalowski Business Line RF Small Signal, NXP Semiconductors Nijmegen, Netherlands Abstract--An extraction method for automated generation of lumped-circuit models of multiport low-loss broadband devices is presented. The method takes a table of S-parameters of the

Proceedings of the 7th European Microwave Integrated Circuits Conference A High-Dynamic Range SiGe Low-Noise Amplifier for X-band Radar Applications Ilker Kalyoncu, Tolga Dinc and Yasar Gurbuz Faculty of Engineering and Natural Sciences ­ FENS, Orhanli ­ Tuzla 34956, Istanbul, Turkey Abstract--In this paper, we present a high-dynamic range (HDR) LNA in 0.25-m SiGe BiCMOS technology, aiming for X

Proceedings of the 7th European Microwave Integrated Circuits Conference An Efficient Computer-Aided Design Procedure for Interpolating Filter Dimensions Using Least Squares Methods E. Menargues # , S. Cogollos # , V. E. Boria # , B. Gimeno and M. Guglielmi Departamento de Comunicaciones - iTEAM, Universidad Politécnica de Valencia, Camino de Vera s/n, Valencia 46022 (SPAIN) E-mail:sancobo-dcom