Proceedings of the 7th European Microwave Integrated Circuits Conference A High Efficiency 140W Power Amplifier based on a Single GaN HEMT Device for Space Applications in L-band S. Rochette, O. Vendier, D. Langrez, J.-L. Cazaux THALES ALENIA SPACE France stephane.rochette-thalesaleniaspace.com M. Buchta UNITED MONOLITHIC SEMICONDUCTORS Germany M. Kuball UNIVERSITY OF BRISTOL United Kingdom A.

Proceedings of the 7th European Microwave Integrated Circuits Conference An Efficient AlGaN/GaN HEMT Power Amplifier MMIC at K-Band C. Friesicke , J. K¨ hn , P. Br¨ ckner , R. Quay , and A. F. Jacob u u Institut f¨ r Hochfrequenztechnik, Technische Universit¨ t Hamburg-Harburg, Denickestr. 22, 21073 Hamburg, Germany u a christian.friesicke-tuhh.de Fraunhofer Institute for Applied Solid-State P

Proceedings of the 7th European Microwave Integrated Circuits Conference Development of GaN based MMIC for next generation X-Band space SAR T/R module Alessandro Barigelli 1, Walter Ciccognani 2, Sergio Colangeli 2, Paolo Colantonio 2, Marziale Feudale 1, Franco Giannini 2, Rocco Giofrè 2, Claudio Lanzieri 3, Ernesto Limiti 2, Antonio Nanni 3, Alessio Pantellini 3, Paolo Romanini 3 2 Thales Alen

Proceedings of the 7th European Microwave Integrated Circuits Conference Transmission Line with Integrated Symmetrical 1-kV HBM DC - 100 GHz ESD Protection in Advanced CMOS Technologies T. Lim 1 2 , J. Jimenez 1 , P. Benech 2 , J.-M. Fournier 2 , P. Galy 1 STMicroelectronics 850 Rue Jean Monnet 38920 Crolles, France tekfouy.lim-st.com Abstract-- Advanced CMOS technologies provide an easier way to

Proceedings of the 7th European Microwave Integrated Circuits Conference A Novel Temperature-Insensitive Gyrator-Based LC Tank with a Complementary Technique and Its Applications Chun-Yi Lin, Wei-Tsung Li, Pei-Zong Rao and Shyh-Jong Chung Institute of Communication Engineering, Nation Chiao-Tung University 1001 Tahsueh Rd., Hsinchu, 300, Taiwan, R.O.C Tel:+886-3-573-1933, Email: sjchung-cm.nctu.e

Proceedings of the 7th European Microwave Integrated Circuits Conference A Physical Model for Skin Effect in Rough Surfaces G. Gold, K. Helmreich Chair for Microwave Engineering and High Frequency Technology (LHFT) Friedrich-Alexander-University Erlangen-Nuremberg Erlangen, Germany gerald.gold-eei.uni-erlangen.de klaus.helmreich-eei.uni-erlangen.de Abstract--Insertion loss measured on PCB transmi

Proceedings of the 7th European Microwave Integrated Circuits Conference Dual-Band Class-ABJ AlGaN/GaN High Power Amplifier V. Carrubba, S. Maroldt, M. Mußer, H. Walcher, M. Schlechtweg, R. Quay, O. Ambacher Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastraße 72, 79108 Freiburg, Germany vincenzo.carrubba-iaf.fraunhofer.de Abstract -- This paper presents a dual-band multiharmo

Proceedings of the 7th European Microwave Integrated Circuits Conference Highly Integrated S and C-band Internally-Matched Quasi-MMIC Power GaN Devices Marc Camiade1, Diane Bouw1, Guillaume Mouginot1, Francis Auvray1, Pierre Franck Alleaume1, Didier Floriot1, Laurent Favède1, James Thorpe2, Hermann Stieglauer2 United Monolithic Semiconductors SAS 10 avenue du Québec, 91140 Villebon-sur-Yvette, Fr

Proceedings of the 7th European Microwave Integrated Circuits Conference The Effect of 2nd Harmonic Control on Power Amplifiers Performances Elisa Cipriani, Paolo Colantonio and Franco Giannini Department of Electronic Engineering Universit` di Roma Tor Vergata a Via del Politecnico, 1, 00133 Roma, Italy Email: elisa.cipriani-uniroma2.it Abstract--This contribution is aimed to study the effects o

Proceedings of the 7th European Microwave Integrated Circuits Conference TUMESA - MEMS Tuneable Metamaterials for Smart Wireless Applications J. Ala-Laurinaho, D. Chicherin, Z. Du, C. Simovski, T. Zvolensky, and A. V. Räisänen MilliLab and SMARAD, Department of Radio Science and Engineering, Aalto University, Espoo, Finland juha.ala-laurinaho-aalto.fi M. Sterner, Z. Baghchehsaraei, U. Shah, S. D