Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process
Olivier Jardel, Guillaume Callet, Jérémy Dufraisse, Michele Piazza, Nicolas Sarazin, Eric Chartier, Mourad Oualli, Raphaël Aubry, Tibault Reveyrand, Jean-Claude Jacquet, Marie-Antoinette Di Forte Poisson, Erwan Morvan, Stéphane Piotrowicz, Sylvain L. Delage
A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it is demonstrated here that AlInN/GaN HEMTs show