Proceedings of the 6th European Microwave Integrated Circuits Conference A 100-GHz Balanced FET Frequency Doubler in 65-nm CMOS Mikko Varonen, Mikko Kärkkäinen, Dan Sandström, Kari A. I. Halonen Aalto University, Department of Micro and Nanosciences/SMARAD-2 Otakaari 5A, 02150 Espoo, Finland mikko.varonen-ecdl.tkk.fi Abstract-- This paper demonstrates a W-band CMOS frequency doubler which utilize

Proceedings of the 6th European Microwave Integrated Circuits Conference Advanced RF Characterization of New Planar High Sensitive Zero-Bias Schottky Diodes Matthias Hoefle# , Andreas Penirschke# , Oleg Cojocari , and Rolf Jakoby# # Institute of Microwave Engineering and Photonics ¨ Technische Universit at Darmstadt, 64283 Darmstadt, Germany ACST GmbH, 64283 Darmstadt, Germany Abstract--New zer

Proceedings of the 6th European Microwave Integrated Circuits Conference Scalable Distributed Small-Signal Millimeter-wave HEMT Model M E Hoque1, Anthony E. Parker2 , Michael Heimlich3 , Jabra Tarazi4 , Simon Mahon5 Dept. of Electronic Engineering, Macquarie University, Sydney NSW Australia 2109 {1shah.hoque, 3michael.heimlich}-mq.edu.au 2 tonyp-ieee.org Macom Technology Solutions, Australia

Proceedings of the 6th European Microwave Integrated Circuits Conference X-band 200W AlGaN/GaN HEMT for High Power Application M.Nishihara#1, T.Yamamoto#2,S.Mizuno*3, S.Sano*4,Y.Hasegawa#5 Sumitomo Electric Device Innovations, Inc. Yamanashi Plant 1000 Kamisukiawara, Showa-cho, Nakakoma-gun, Yamanashi 409-3883, Japan 1 2 # nishihara-makoto-gr.sei.co.jp yamamoto-takashi-gr.sei.co.jp 5 hasegawa-y

Proceedings of the 6th European Microwave Integrated Circuits Conference A 38-GHz Down-Converter with Low Noise Variable Gain Amplifier Having 24dB Dynamic Range in SMT Package Khanhtran Phan Wireless Semiconductor Division, Avago Technologies 350 West Trimble Road, San Jose, CA 95132, USA khanhtran.phan-avagotech.com Abstract--In the higher frequency bands of the point-to-point communication sys

Proceedings of the 6th European Microwave Integrated Circuits Conference Broadband 31-65 GHz Inductorless Active BALUN with 12.4 dB Gain in 0.13 SiGe:C BiCMOS Technology A. Awny, Christian Wipf and J. Christoph Scheytt IHP, Im Technologiepark 25, 15230 Frankfurt(Oder), Germany. Email: scheytt-ihp-microelectronics.com A. Thiede Dept. Of High-Frequency Electronics, University of Paderborn. Warburg

Proceedings of the 6th European Microwave Integrated Circuits Conference Minature Monolithic Power Detectors with Integrated High Directivity Couplers Tony Niedzwiecki, Henrik Morkner M/A-COM Technology Solutions Inc. Lowell, Mass., USA Abstract-- Modern backhaul digital radios require sophisticated output power control to handle 4G phone data load. This paper describes a family of monolithic pow

Proceedings of the 6th European Microwave Integrated Circuits Conference A Novel Small PHEMT LNA that Integrates Active Matching for 1 to 20GHz and 1.1dB NF Performance Henrik Morkner, Wayne Kennan, Tony Niedzwiecki, Tim Galla M/A-COM Technology Solutions Lowell, Mass, USA Abstract--This paper demonstrates a novel LNA (Low Noise Amplifier) design that utilizes active inter-stage and I/O matching

Proceedings of the 6th European Microwave Integrated Circuits Conference A Highly Efficient Octave Bandwidth High Power Amplifier in GaN Technology Elisa Cipriani, Paolo Colantonio, Franco Di Paolo, Franco Giannini and Rocco Giofr` e Department of Electronic Engineering Universit` di Roma Tor Vergata a Via del Politecnico, 1, 00133 Roma, Italy Email: elisa.cipriani-uniroma2.it Rossella Diciomma,

Proceedings of the 6th European Microwave Integrated Circuits Conference Basic Concepts of Moving-Sidewall Tuneable Capacitors for RF MEMS Reconfigurable Filters U. Shah, M. Sterner, J. Oberhammer Microsystem Technology Lab, KTH-Royal Institute of Technology Stockholm, Sweden +46-87907782 umers-kth.se Abstract-- This paper presents for the first time MEMS tuneable filters, where the reconfigurati