Proceedings of the 6th European Microwave Integrated Circuits Conference A 245 GHz CB LNA in SiGe Yanfei Mao, K. Schmalz, J.Borngräber, J.C. Scheytt IHP, Im Technologiepark 25 Frankfurt (Oder), Germany mao-ihp-microelectronics.com Abstract--The paper presents a four stage 245 GHz LNA in SiGe technology. Common base (CB) topology is chosen for each stage. The amplifier takes advantage of passives

Proceedings of the 6th European Microwave Integrated Circuits Conference Schottky-based THz-MIC-s Oleg Cojocari, Ion Oprea ACST GmbH, Merckstrasse 25, 64283, Darmstadt, Germany cojocari-acst.de Abstract -- This paper summarizes recently-achieved results for a frequency mixer and multiplier at Sub-mm-wavelengths, using a new-developed fabrication technology for Schottky-based Structures. Achieved

Proceedings of the 6th European Microwave Integrated Circuits Conference Active Fixture with Passive Tuners for Full-Range Load-Pull Measurements Subrata Halder and James C.M. Hwang Lehigh University Bethlehem, PA USA subrata.halder-rfmd.com Abstract-- The lossy cable in a conventional load-pull setup was replaced with an active fixture to realize full tuning range by using passive electromechan

Proceedings of the 6th European Microwave Integrated Circuits Conference Electro-thermal Behavioral Modeling of RF Power Amplifier taking into account Load-pull Effects for Narrow Band Radar Applications F. Besombes, J. Mazeau, J.P. Martinaud, Y. Mancuso Thales Systèmes Aéroportés 2, avenue Gay-Lussac, 78851 Elancourt, France florent.besombes-fr.thalesgroup.com Abstract--This paper presents an el

Proceedings of the 6th European Microwave Integrated Circuits Conference A 56-65 GHz High-power Amplifier MMIC using 100 nm AlGaN/GaN Dual-gate HEMTs D. Schwantusche#1, C. Haupt#, R. Kiefer#, P. Brückner#, M. Seelmann-Eggebert#, M. Mikulla#, I. Kallfass#*, and R. Quay# # Fraunhofer Institute Applied Solid-State Physics (IAF) Tullastr. 72, D-79108 Freiburg, Germany 1 dirk.schwantuschke-iaf.fraun

Proceedings of the 6th European Microwave Integrated Circuits Conference Thermal Stability of Gold Free Fully Cu/Ge Metalized GaAs pHEMT E. V. Erofeev1, E. V. Anishchenko, V. S. Arykov Microelectronics Department Research and Production Company "Micran" Tomsk, Russian Federation 1 erofeev-micran.ru Abstract--The thermal stability performance of the fully Cu/Ge metalized GaAs pHEMT and pHEMT with

Proceedings of the 6th European Microwave Integrated Circuits Conference A New GaAs Multi-Chip MMIC C-Band Variable Gain Amplifier for Point to Point Wireless Communication Systems Diana Zhang, James Tajadod M/A-COM Technology Solutions, Inc. 100 Chelmsford Street, Lowell, MA 01851, USA wen.zhang-macomtech.com james.tajadod-macomtech.com Abstract -- In this paper a new GaAs Multi-Chip MMIC CBand

Proceedings of the 6th European Microwave Integrated Circuits Conference Using the Best Linear Approximation to Model the Nonlinear Behavior of Supply Modulated Amplifiers Mattias Thorsell , Kristoffer Andersson, Guillaume Pailloncy, Yves Rolain Centre, Microwave Electronics Laboratory Chalmers University of Technology, 412 96 G¨ teborg, Sweden o mattias.thorsell-chalmers.se Department GigaHert

Proceedings of the 6th European Microwave Integrated Circuits Conference A High Linearity, Low Noise Amplifier Module Integrated With Fail-Safe Bypass Switch for Tower Mounted Amplifier Application Hang-Kiong Lee Avago Technologies Inc. Wireless Semiconductor Division Bayan Lepas Free Industrial Zone, 11900 Penang, Malaysia hang-kiong.lee-avagotech.com Abstract--The paper describes the design and

Proceedings of the 6th European Microwave Integrated Circuits Conference Continuously Tunable W-Band Phase Shifter based on Liquid Crystals and MEMS Technology Carsten Fritzsch1 , Flavio Giacomozzi2 , Onur Hamza Karabey1 , Felix Goelden, Alexander Moessinger, Saygin Bildik1 , Sabrina Colpo2 and Rolf Jakoby1 1 Institute of Microwave Engineering and Photonics, Technische Universit¨ t Darmstadt, a