Proceedings of the 6th European Microwave Integrated Circuits Conference Up-Converted Dual-Envelope Injection Enhanced Digital Predistortion for Inverse Class-E Power Amplifier Linearization You-Jiang Liu #*1, Rong Zeng *2, Tao Cao *3, Bang-Hua Zhou *4, Jie Zhou *5, Yi-Nong Liu #6 # Department of Engineering Physics, Tsinghua University, Beijing 100084, China 1 goowuu-gmail.com * Institute of

Proceedings of the 6th European Microwave Integrated Circuits Conference An Improved Large-Signal Model of GaN MISHEMT Lin-Sheng Liu#*1 and Fan He#2 # Chengdu R&D Center, Ericsson (China) Communications Co., Ltd., Chengdu, 610041, China 1 eric.n.liu-ericsson.com 2 fan.he-ericsson.com * School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, 611731,

Proceedings of the 6th European Microwave Integrated Circuits Conference E-Band Radio Link Communication Chipset in Cost Effective Wafer Level Chip Size Package (WLCSP) Technology K. Tsukashima 1, M. Kubota 1, A. Yonamine 1, T. Tokumitsu 1, and Y. Hasegawa 2 Sumitomo Electric Industries LTD, 1, Taya-cho, Sakae-ku, Yokohama, Kanagawa 244-8588, Japan 2 Sumitomo Electric Device Innovations Inc, 1000

Proceedings of the 6th European Microwave Integrated Circuits Conference A Variable Gain Distributed Amplifier with Low Voltage and Low Power in 0.18-m CMOS Technology Ping Chen, Ze-Yu Liao, Che-Chung Kuo, and Huei Wang1 Dept. of Electrical Engineering and Graduate Institute of Communication Engineering National Taiwan University 1 Roosevelt Road, Sec. 4, 10617 Taipei, Taiwan, R. O. C. 1 hueiwan

Proceedings of the 6th European Microwave Integrated Circuits Conference X-band Internally Harmonic Controlled GaN HEMT Amplifier with 57% Power Added Efficiency K. Yamanaka1, T. Morimoto2, S. Chaki3, M. Nakayama1, and Y. Hirano1 1 Mitsubishi Electric Corporation, Information Technology R&D Center, Ofuna 5-1-1, 247-8501 Kamakura, Japan, Phone : +81-467-41-2692 2 Mitsubishi Electric Corporation,

Proceedings of the 6th European Microwave Integrated Circuits Conference S-band Internally Harmonic Matched GaN FET with 330W Output Power and 62% PAE K. Yamanaka1, M. Kimura2, S. Chaki3, M. Nakayama1, and Y. Hirano1 1 Mitsubishi Electric Corporation, Information Technology R&D Center, Ofuna 5-1-1, 247-8501 Kamakura, Japan, Phone : +81-467-41-2692 2 Mitsubishi Electric Corporation, Kamakura Wor

Proceedings of the 6th European Microwave Integrated Circuits Conference High Efficiency, Wide Band 50 Watt, 28V InGaP/GaAs HBT MMIC Wenlong Ma, Xiaopeng Sun, Philip Lam, Peter Hu, Jingshi Yao, Louis Liu, Frank Chau, Xiangkun Zhang, Barry Lin TriQuint Semiconductor 3099 Orchard Drive, San Jose, California, 95134, USA Wenlong.ma-tqs.com Xiaopeng.sun-tqs.com Abstract-- This paper reports on a 50W h

Proceedings of the 6th European Microwave Integrated Circuits Conference Comparison of Class A and Class D RF Amplifier Operation with Focus on Reverse Intermodulation and Efficiency Performance Michael Kamper and Gerald Ulbricht Fraunhofer Institute for Integrated Circuits IIS Erlangen, Germany michael.kamper-iis.fraunhofer.de Robert Weigel and Georg Fischer University of Erlangen-Nuremberg Erl

Proceedings of the 6th European Microwave Integrated Circuits Conference 8-Bit 5GS/s D/A Converter for Multi-Gigabit Wireless Transceivers Behnam Sedighi, Mahdi Khafaji, J. Christoph Scheytt IHP, Frankfurt (Oder), Germnay sedighi-ihp-microelectronics.com Abstract-- we present a method to realize a low-power and highspeed Digital-to-Analog converter (DAC) for system-on-chip applications. The new m

Proceedings of the 6th European Microwave Integrated Circuits Conference Harmonically Tuned GaN-HEMT Doherty Power Amplifier for 6 GHz Applications D. Gruner, K. Bathich, A. Al Tanany, and G. Boeck Microwave Engineering Laboratory Berlin Institute of Technology Berlin, Germany Abstract--In this paper a GaN-HEMT Doherty amplifier targeted for vehicular applications at 6 GHz is presented. The harmo