Proceedings of the 6th European Microwave Integrated Circuits Conference Impact of Surface Recombination on the Responsivity of GaAs- and InP- based Heterojunction Photo-Transistors Hassan A. Khan#1, Ali A. Rezazadeh*2 # Department of Electrical Engineering, School of Science and Engineering Lahore University of Management Sciences (LUMS), 54792, Pakistan 1 hassan.khan-lums.edu.pk * Microwave

Proceedings of the 6th European Microwave Integrated Circuits Conference GaN Power Amplifier with Harmonic Controlled by Dual Band-Notched UWB Bandpass Filter Zhebin Wang, Shengjie Gao, Fathi Nasri, and Chan-Wang Park Electrical Engineering University of Quebec in Rimouski Rimouski, Canada chan-wang_park-uqar.qc.ca Abstract--In this paper, a new type of GaN HEMT power amplifier (PA) using dual b

Proceedings of the 6th European Microwave Integrated Circuits Conference A Compact L-Band Broadband 6-bit MMIC Phase Shifter with Low Phase Error Qun Xiao M/A-COM Technology Solutions, Inc., Lowell, MA, 01720, U.S.A Abstract -- This paper discusses the design and test performance of a compact L-band 6-bit phase shifter monolithic microwave integrated circuit (MMIC). Each bit of this phase shifter

Proceedings of the 6th European Microwave Integrated Circuits Conference Dynamic Extended Hammerstein Model of RF Power Amplifiers for Digital Predistortion Yingjie Xu1, Jingqi Wang2, Xiaowei Zhu3 and Jianfeng Zhai4 State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University Nanjing 210096, China 1 yjxu-emfield.org 2 jingqiwang321-gmail.com 3 xwzh

Proceedings of the 6th European Microwave Integrated Circuits Conference Physics-Based Simulation of Back-Electrode Effects on Lag and Current Collapse in Field-Plate AlGaN/GaN HEMTs H. Onodera, A. Nakajima and K. Horio Faculty of Systems Engineering, Shibaura Institute of Technology, Saitama 337-8570, Japan Abstract--Two-dimensional transient analysis of gate-field-plate AlGaN/GaN HEMTs with a

Proceedings of the 6th European Microwave Integrated Circuits Conference Broadband OFDM Signal Transmission over Combined Optical-Wireless Links T. Berceli, M. Csörnyei, B. Klein, T. Marozsák, E. Udvary Budapest University of Technology and Economics, 1111Budapest,Goldmann ter 3, Hungary berceli-mht.bme.hu Abstract - There is an increasing demand for broadband networks in today's rapidly developi

Proceedings of the 6th European Microwave Integrated Circuits Conference Multi-Carrier Wideband Nonlinear Behavioral Modeling for Cognitive Radio Receivers Pedro Miguel Cruz and Nuno Borges Carvalho Dep. Electrónica, Telecomunicações e Informática, Instituto de Telecomunicações, Universidade de Aveiro Campus Universitário de Santiago, Aveiro, Portugal pcruz-av.it.pt nbcarvalho-ua.pt Abstract--Thi

Proceedings of the 41st European Microwave Conference Quantum Circuit Theory Johannes A. Russer and Peter Russer Inst. for Nanoelectronics, Technische Universität München, Arcisstrasse 21, Munich, Germany j.russer-tum.de russer-tum.de Abstract--In RF nanoelectronics and mesoscopic electronics quantum effects play a role on the circuit and system level. In this work a quantum electrodynamics based

Proceedings of the 41st European Microwave Conference Wide Band Gap Self-Switching Nanodevices for THz Applications at Room Temperature C. Gaquiere1, G. Ducournau1, P. Sangaré1, B. Grimbert1, M. Faucher1, I. Iñiguez-de-la-Torre², A. Iñiguez-de-la-Torre², T. González² and J. Mateos² 1 Institut d'Electronique de Microélectronique et de Nanotechnologie IEMN, UMR CNRS 8520 59650 Villeneuve D'Ascq, F

Proceedings of the 41st European Microwave Conference Planar Terahertz Nanodevices Claudio Balocco1, Shahrir R. Kasjoo1, Linqing Q. Zhang1, Yasaman Alimi1, Stephan Winnerl2, Aimin M. Song*1 1 School of Electrical and Electronic Engineering, Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom * A.Song-manchester.ac.uk 2 Institute of Ion Beam Physics and Mater