Proceedings of the 5th European Microwave Integrated Circuits Conference A Balanced Resistive 210 GHz Mixer with 50 GHz IF Bandwidth D. Lopez-Diaz1, I. Kallfass, A. Tessmann, H. Massler, A. Leuther, M. Schlechtweg, O. Ambacher Fraunhofer Institute for Applied Solid State Physics IAF Tullastrasse 72, 79108 Freiburg, Germany 1 daniel.lopez-diaz-iaf.fraunhofer.de Abstract--A novel balanced 210 GHz

Proceedings of the 5th European Microwave Integrated Circuits Conference Transmission Line and Lange Coupler Implementations in CMOS Mikko Kärkkäinen, Dan Sandström, Mikko Varonen, Kari A. I. Halonen Aalto University, School of Science and Technology, Department of Micro and Nanosciences, SMARAD-2 P.O. Box 13000, FI-00076 Aalto, Finland mikko.karkkainen-ecdl.tkk.fi Abstract--This paper presents

Proceedings of the 5th European Microwave Integrated Circuits Conference A New Behavioral Model for Nonlinear Analysis of Class D Amplifiers for PWM Applications F. Arfaei Malekzadeh1, R. Mahmoudi, A.H.M. van Roermund Mixed Signal Microelectronic Group, Department of Electrical Engineering, Eindhoven University of Technology, Eindhoven, The Netherlands 1 f.a.m.arfaei-tue.nl These parasitics hav

Proceedings of the 5th European Microwave Integrated Circuits Conference Simulation and Measurement of Back Side Etched Inductors Falk Korndörfer#1, Mehmet Kaynak#2, Volker Mühlhaus*3 Innovations for High Performance Microelectronics Im Technologiepark 25, 15236 Frankfurt (Oder), Germany 1 # korndoerfer-ihp-microelectronics.com 2 kaynak-ihp-microelectronics.com * Dr. Mühlhaus Consulting & Soft

Proceedings of the 5th European Microwave Integrated Circuits Conference A 3 bit 20 GS/s Flash ADC in 65 nm Low Power CMOS Technology Damir Ferenci, Markus Gr¨ zing, Felix Lang, Manfred Berroth o Institute of Electrical and Optical Communications Engineering, University of Stuttgart Pfaffenwaldring 47, 70569 Stuttgart, Germany damir.ferenci-int.uni-stuttgart.de Abstract-- A 20 GS/s 3 bit flash A

Proceedings of the 5th European Microwave Integrated Circuits Conference A Triple-Band SiGe HBT Differential VCO Using a Reconfigurable Multi-Band Resonator Yasushi Itoh#1 and Shota Tanaka#2 # Electrical and Information Engineering, Graduate School, Shonan Institute of Technology 1-1-25 Tsujido-Nishikaigan, Fujisawa, Kanagawa, 251-8511 Japan 1 itohy-center.shonan-it.ac.jp 2 a062070-sit.shonan-i

Proceedings of the 5th European Microwave Integrated Circuits Conference Multilayer low-resistance Ge/Au/Ni/Ti/Au based ohmic contact to n-GaAs E. V. Erofeev#1, S. V. Ishutkin#2, V. A. Kagadei*3, K. S. Nosaeva#4 Research and production company "Micran" 47, Vershinina st, Tomsk, 634045, Russian Federation 1 # erofeev-sibmail.com *"Submicron technologies" 8, Akademicheskiy ave., Tomsk, 634021, R

Proceedings of the 5th European Microwave Integrated Circuits Conference Distributed Switch FET Model that Predicts Better Insertion Loss and Harmonics Ce-Jun Wei, Yu Zhu, Alex Klimashov, Hong Yin, Cindy Zhang and Dylan Bartle Skyworks Solution Inc., 20 Sylvan Road, Woburn, MA 01801, USA Abstract-- With increasing scale/complexity in phemt switch circuits and dimension shrinking of unit phemt swi

Proceedings of the 5th European Microwave Integrated Circuits Conference Assessment of power-transistor package models: distributed versus lumped approach Matthias Rudolph1 and Wolfgang Heinrich2 Brandenburg University of Technology Ulrich L. Rohde Chair of RF and Microwave Techniques, Siemens-Halske-Ring 14, 03046 Cottbus, Germany 2 Ferdinand-Braun-Institut f¨ r H¨ chstfrequenztechnik (FBH), Gus

Proceedings of the 5th European Microwave Integrated Circuits Conference A Low-Noise 8-12 GHz Fractional-N PLL in SiGe BiCMOS Technology Rüdiger Follmann #1, Dietmar Köther #2, Frank Herzel*1, Frank Winkler +1, and Heinz-Volker Heyer ~1 # IMST GmbH, Carl-Friedrich-Gauß-Str. 2, D-47475 Kamp-Lintfort, Germany 1 2 follmann-imst.de koether-imst.de * IHP, Im Technologiepark 25, D-15236 Frankfurt (