Proceedings of the 5th European Microwave Integrated Circuits Conference InP DHBT Transimpedance Amplifiers with Automatic Offset Compensation for 100 Gbit/s Optical Communications J.-Y. Dupuy, F. Jorge, M. Riet, A. Konczykowska, J. Godin Alcatel-Thales III-V Lab, joint lab between Bell Labs and Thales Research and Technology Route de Nozay, Marcoussis, 91460, France jean-yves.dupuy-3-5lab.fr Abs

Proceedings of the 5th European Microwave Integrated Circuits Conference A 10 GHz cut-off frequency transistor based on epitaxial graphene nano ribbon Nan Meng#1, J. Ferrer Fernandez #, Dominique Vignaud #, Gilles Dambrine #, Henri Happy # # Institut d'Electronique, de Microélectronique et de Nanotechnologie, UMR-CNRS 8520, BP 60069, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex, France 1 man.

Proceedings of the 5th European Microwave Integrated Circuits Conference High Voltage Breakdown pHEMTs for C-Band HPA S. Lavanga1, A. Chini2, A. Coppa1, F. Corsaro1, A. Nanni1, A. Pantellini1, P. Romanini1, and C. Lanzieri1 1 Selex Sistemi Integrati S.p.A.- GaAs Foundry Unit- Engineering Department Via Tiburtina, Km 12,400 - 00131 Roma Italy 2 Department of Electrical Engineering, University o

Proceedings of the 5th European Microwave Integrated Circuits Conference A 40 Gsamples/s InP-DHBT Track-&-Hold Amplifier Yves Bouvier#1, Achour Ouslimani#2, Agnieszka Konczykowska*3, Jean Godin*4 ECS-ENSEA 6 rue du Ponceau, Cergy-Pontoise, 95014, France bouvier_y-yahoo.fr ouslimani-ensea.fr * Alcatel-Thales III-V Lab Route de Nozay, Marcoussis, 91460, France agnieszka.Konczykowska-3-5lab.fr 2 1

Proceedings of the 5th European Microwave Integrated Circuits Conference Integrated Active Loop Sensor in SiGe Technology for Near-Field Scanning Nasir Uddin1, Ahmed Awny1, 2, Andreas Thiede1 1 Chair of High Frequency Electronics, University of Paderborn, Warburger Str. 100, 33098 Paderborn, Germany nuddin-mail.uni-paderborn.de 2 IHP Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Ode

Proceedings of the 5th European Microwave Integrated Circuits Conference Performances of AlInN/GaN HEMTs for Power Applications at Microwave Frequencies O. Jardel#1, G. Callet#,*2, J. Dufraisse#,*, N. Sarazin#, E. Chartier#, T. Reveyrand*, M. Oualli#, D. Lancereau#, M.A. Di Forte Poisson#, S. Piotrowicz#, E. Morvan#, S.L. Delage# Alcatel-Thales III-V Lab Route de Nozay, 91460 Marcoussis, France 1

Proceedings of the 5th European Microwave Integrated Circuits Conference Determination of Suitable mHEMT Transistor Dimensioning for Power Amplification at 210 GHz by Comprehensive Measurements S. Diebold # 1 , I. Kallfass # , H. Massler , A. Leuther , A. Tessmann , P. Pahl # , S. Koch , M. Siegel # and O. Ambacher # Karlsruhe Institute of Technology (KIT) Kaiserstrasse 12, D-76131 Karlsru

Proceedings of the 5th European Microwave Integrated Circuits Conference A 52-75 GHz Frequency Quadrupler in 0.25-m SiGe BiCMOS Process Nai-Chung Kuo#, Zuo-Min Tsai#, Klaus Schmalz*, Johann Christoph Scheytt*, Huei Wang#1 # Dept. of Electrical Engineering and Graduate Institute of Communication Engineering, National Taiwan University No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan 1 * huei

Proceedings of the 5th European Microwave Integrated Circuits Conference Physical Analysis of Substrate Noise Coupling in Mixed Circuits in SoC Technology Charif Mohamed, Bruno Barelaud and Edouard Ngoya XLIM, Research Institute UMR CNRS n°6172, 123, avenue Albert Thomas - 87060 Limoges France {charif.mohamed,bruno.barelaud,edouard.ngoya}-xlim.fr Abstract--The paper presents physics based approac

Proceedings of the 5th European Microwave Integrated Circuits Conference Design and Manufacturing of Wideband Buried RF Feedthroughs for Wafer-Level RF MEMS Package H. El Gannudi1, P. Farinelli1, I. Pieper2, E. Chiuppesi1, R. Sorrentino1 1 University of Perugia, Dept. of Electronic and Information Engineering, Via G. Duranti, 93, 06125 Perugia, Italy hamza.ghannudi-diei.unipg.it 2 Fraunhofer In