Proceedings of the 5th European Microwave Integrated Circuits Conference On the Importance of Chip-level EM-simulations for 60-GHz CMOS circuits Hammad M. Cheema, Reza Mahmoudi, Arthur van Roermund Department of Electrical Engineering, Mixed-signal Microelectronics group, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands h.m.cheema-tue.nl Abstract-- This paper discusses the

Proceedings of the 5th European Microwave Integrated Circuits Conference High Power, Fully Integrated SMT Amplifiers with +47dBm OIP3 at 15GHz and 6W, 38% Efficiency at 30GHz Using Low Cost, High Volume PHEMT Henrik Morkner*, Kohei Fujii and Brent Ostermann Avago Technologies, Wireless Semiconductor Division 350 W. Trimble Road, San Jose, California kohei.fujii-avagotech.com * M/A-com technology

Proceedings of the 5th European Microwave Integrated Circuits Conference Material Adaptation and Optimisation of Passive Ka-Band Multilayer Circuit Designs using an Efficient Modular Design Strategy Gabor Vogt 1 , Stefan Humbla, Jens M¨ ller, Ralf Stephan, Dirk St¨ pel, Johannes F. Trabert, and Matthias A. Hein u o Institute of Micro- and Nanotechnologies, Ilmenau University of Technology P.O. Bo

Proceedings of the 5th European Microwave Integrated Circuits Conference Analysis of AlGaN/GaN Epi-material on Resistive Si(111) Substrate for MMIC Applications in Millimeter Wave Range F. Lecourt#1, Y. Douvry#, N. Defrance#, V. Hoel#, Y. Cordier*2, JC. De Jaeger# # IEMN (Institut d'Electronique, de Microélectronique et de Nanotechnologie), UMR CNRS 8520 Université Lille1, Avenue Poincaré, 59652

Proceedings of the 5th European Microwave Integrated Circuits Conference Temperature dependent degradation modes in AlGaN/GaN HEMTs Y. Douvry1, V. Hoel1, J.-C. De Jaeger1, N. Defrance1, C. Sury2, N. Malbert2, N.Labat2, A. Curutchet2, C. Dua3, M. Oualli3, M. Piazza3, J.-M. Bluet4 , W. Chikhaoui4, C. Bru-Chevallier4 1 IEMN (Institut d'Electronique, de Microélectronique et de Nanotechnologie), UMR

Proceedings of the 5th European Microwave Integrated Circuits Conference Broadband, mmW Chipscale Switches T. Boles, J. Brogle, A. Rozbicki M/A-COM Technology Solutions 100 Chelmsford Street, Lowell, Massachusetts 01851, USA timothy.boles-macomtech.com james.brogle-macomtech.com andrzej.rozbicki-macomtech.com Abstract -- Broadband components continue have the basic issues of fundamental high fre

Proceedings of the 5th European Microwave Integrated Circuits Conference Schottky Membrane Technology for Sub-mm wave Applications John Pike#1, Liam Floyd#, Dan O'Connell#, Tomasz Waliwander*2, Michael Crowley*, Dimitri Lederer· # Tyndall National Institute, Cork, Ireland 1 john.pike-tyndall.ie *Farran Technology Ltd. Unit 1, Airport East Business Park, Farmers Cross, Cork, Ireland 2 twaliwan

Proceedings of the 5th European Microwave Integrated Circuits Conference AlGaN/GaN Mixer MMICs, and RF Front-End Receivers for C-, Ku-, and Ka-band Space Applications M-N. Do1, M. Seelmann-Eggebert2, R. Quay2, D. Langrez1, J-L. Cazaux1 Thales Alenia Space - France 26, av. J-F. Champollion ­ BP1187 ­ 31037 Toulouse, FRANCE minh-nhut.do-thalesaleniaspace.com 1 Fraunhofer Institute of Applied Solid

Proceedings of the 5th European Microwave Integrated Circuits Conference Comparison of Low Phase Noise Oscillators Topologies Using BAW Resonator Mingdong.LI1, S. Seok1, N. Rolland1, P. -A. Rolland1, Hassan El Aabbaoui2, Emeric de Foucauld2 and P. Vincent2 1 IEMN Avenue Poincaré, BP 60069, 59652 Villeneuve d'Ascq, France 2 CEA-LETI Minatec, 17 Rue des Martyrs, 38054 Grenoble, France 1 mingdong.

Proceedings of the 5th European Microwave Integrated Circuits Conference Performance Assessment of GaN HEMT Technologies for Power Limiter and Switching Applications Alessio Pantellini, Marco Peroni, Antonio Nanni, Andrea Bettidi SELEX Sistemi Integrati SpA, Via Tiburtina Km.12,400, Rome 00131, Italy apantellini-selex-si.com Abstract -- In this work, a systematic study on GaN HEMT devices for Swi