Proceedings of the 5th European Microwave Integrated Circuits Conference A High Efficiency and Multi-Band/Multi-Mode Power Amplifier using a Distributed Second Harmonic Termination Jangheon Kim #1 , Farouk Mkadem , and Slim Boumaiza 2 # Telecommunication System Division, Digital Media & Communication Business, Samsung Electronics Co., Ltd 416, Maetan 3-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do

Proceedings of the 5th European Microwave Integrated Circuits Conference A DC­4 GHz 270 Differential SiGe Low-Noise Amplifier for Cryogenic Applications Joseph C. Bardin 1 and Sander Weinreb 2 Department of Electrical Engineering, California Institute of Technology 1200 E. California Blvd., Pasadena, CA, 91125. USA 1 2 jbardin-caltech.edu sweinreb-caltech.edu Abstract-- The design and measureme

Proceedings of the 5th European Microwave Integrated Circuits Conference A Broadband, Efficient, Overdriven Class-J RF Power Amplifier for Burst Mode Operation Dristy Rahul Parveg #+ , Peter Singerl # , Andreas Wiesbauer # , Hossein Mashad Nemati , Christian Fager + Infineon Technologies Austria AG, Siemensstr. 2, 9500 Villach, Austria Vienna University of Technology, EMCE Institute, Gusshauss

Proceedings of the 5th European Microwave Integrated Circuits Conference Electrothermal and Large-Signal Modeling of Switchmode AlGaN/GaN HEMTs G. Callet#*1 , J. Faraj#, A. El Rafei#, O. Jardel*2, J. C. Jacquet*, J.P. Teyssier#, E. Morvan*, S. Piotrowicz*, R. Quéré# XLIM C²S² (UMR C RS 6172) 7, rue Jules Vallès, 19100 Brive-la-Gaillarde, France 1 # guillaume.callet-xlim.fr * Alcatel-Thales III

Proceedings of the 5th European Microwave Integrated Circuits Conference Classification of Trapping Characteristic in HEMTs Sayed A. Albahrani #1 , Anthony E. Parker #2 # Dept. of Physics and Engineering, Macquarie University, Sydney NSW Australia 2109 1 sayed.albahrani-mq.edu.au 2 tonyp-ieee.org Abstract-- Trapping phenomenon is classified through its manifestation in the IDS -VDS and IDS -VG

Proceedings of the 5th European Microwave Integrated Circuits Conference High Performance InSb QWFETs for Low Power Dissipation Millimetre Wave Applications T. Ashley1, M.T. Emeny, D.G. Hayes, K.P. Hilton, R. Jefferies, J.O. Maclean, S.J. Smith, W.H.A. Tang, P.J. Webber and G.M. Williams QinetiQ, Malvern Technology Centre, St Andrew's Road, Malvern, WR14 3PS, UK 1 tashley-qinetiq.com Abstract-- I

Proceedings of the 5th European Microwave Integrated Circuits Conference Temperature Dependent Small-Signal Model Parameters Analysis of AlGaAs/InGaAs pHEMTs in Multilayer 3D MMIC Technology Jimmy P. H. Tan, Junyi Yuan, Ali A. Rezazadeh and Qing Sun The electromagnetic Centre for Microwave and mm-Wave Designs and Applications, School of Electrical and Electronics Engineering, The University of Ma

Proceedings of the 5th European Microwave Integrated Circuits Conference Design of HEMT GaN Power Amplifiers with Wideband Control of 2nd Harmonic Impedances in S-Band J.Chéron#1, M.Campovecchio#, D.Barataud#, M.Stanislawiak*, C.Tolant*, P.Eudeline*, D.Floriot&, S.Heckmann&, L.Favède&, F.Temcamani%, C.Duperrier% # XLIM ­ UMR 6172, Université de Limoges/CNRS, 123 avenue Albert Thomas, 87060 Limog

Proceedings of the 5th European Microwave Integrated Circuits Conference A 60 GHz 18 dBm Power Amplifier Utilizing 0.25 m SiGe HBT Amin Hamidian1, Viswanathan Subramanian1, Ralf Doerner2, Georg Boeck1 2. Microwave Engineering Lab, Berlin Institute of Technology, Berlin, Germany Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik (FBH), Berlin, Germany would decrease the parasi

Proceedings of the 5th European Microwave Integrated Circuits Conference A Non Linear Power HEMT Model Operating in Multi-Bias Conditions C. Charbonniaud 1, A. Xiong 1 2, S. Dellier 1, O. Jardel 3, R. Quéré 2 AMCAD Engineering 1, Avenue ESTER Technopole, 87069 Limoges, France charbonniaud-amcad-engineering.fr 1 XLIM-UMR CNRS 6172 ­ Université de Limoges 7, rue Jules Vallès, 19100 Brive la Gailla