Proceedings of the 5th European Microwave Integrated Circuits Conference RF Waveform Method for the Determination of the Safe Operating Area of GaN HFET's for Amplifiers Subjected to High Output VSWR William McGenn#1, Jeff Powell*2, Michael Uren*, Johannes Benedikt#, Paul Tasker# # Centre for High Frequency Engineering, Cardiff University, The Parade, Cardiff, UK. CF24 3AA 1 mcgennw-Cardiff.ac.

Proceedings of the 5th European Microwave Integrated Circuits Conference A Fully Integrated Multiband Frequency Synthesizer for WLAN and WiMAX Applications Emre Ozeren, Samet Zihir, Ferhat Tasdemir, Ibrahim Tekin, Yasar Gurbuz Sabanci University, Faculty of Engineering and Natural Sciences, Electronics Engineering Orhanli, Tuzla, 34956 Istanbul, Turkey emreozeren-su.sabanciuniv.edu sametzihir-sa

Proceedings of the 5th European Microwave Integrated Circuits Conference High Frequency Performance of Tellurium -Doped AlSb/InAs HEMTs at Low Power Supply Aur´ lien Olivier, Albert Noudeviwa, Nicolas Wichmann, Yannick Roelens, Ludovic Desplanque, e Francois Danneville, Gilles Dambrine, Xavier Wallart and Sylvain Bollaert ¸ IEMN, UMR-CNRS 8520, University of Lille, Cit´ Scientifique, avenue Poinc

Proceedings of the 5th European Microwave Integrated Circuits Conference Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation Antonio Raffo#1, Sergio Di Falco#, Valeria Vadalà#, Giorgio Vannini# # Department of Engineering, University of Ferrara Via Saragat, 1 - 44122, Ferrara, Italy 1 antonio.raffo-unife.it Abstract-- In this paper a new methodology to characterize

Proceedings of the 5th European Microwave Integrated Circuits Conference HPA Module for Active Antenna Applications D. Lopez * , L. Bortoli * , J-P. Fraysse * , D. Langrez * , J-F. Villemazet * , J-L. Cazaux * , G. Soubercaze-Pun^ , L. Lapierre^ * THALES ALENIA SPACE,26 avenue J.F. Champollion, BP 33787, 31037 TOULOUSE, France ^ CNES, 18 avenue Edouard Belin, 31 401 TOULOUSE, France david.lopez-

Proceedings of the 5th European Microwave Integrated Circuits Conference 150 nm copper metalized GaAs pHEMT with Cu/Ge ohmic contacts E. V. Anichenko#, V. S. Arykov#, E. V. Erofeev#3, V. A. Kagadei*4 Research and production company "Micran" 47, Vershinina st, Tomsk, 634045, Russian Federation 3 # erofeev-sibmail.com *"Submicron technologies" 8, Akademicheskiy ave., Tomsk, 634021, Russian Feder

Proceedings of the 5th European Microwave Integrated Circuits Conference High-Isolation Low-Loss SP7T pHEMT Switch Suitable for Antenna Switch Modules Michael D. Yore1, Corey A. Nevers2, Philippe Cortese1 1 TriQuint Semiconductor, Florida USA 1818 S. Highway 441 Apopka, FL. USA myore-tqs.com pcortese-tqs.com 2 TriQuint Semiconductor, Oregon USA 2300 Brookwood PKWY Hillsboro, OR. 97124 USA Core

Proceedings of the 5th European Microwave Integrated Circuits Conference HVVFET : A New 0.25m Channel Length RF POWER MOSFET with Ultra Low Feedback Capacitance D. Rice, W. Z. Cai, B. P. Gogoi, M. Watts, P. Le, R. B. Davies, and D. Lutz HVVi Semiconductors, 10235 South 51st Street, Suite 100, Phoenix, AZ 85044, USA Phone: +1-480-7763800 dave.rice-hvvi.com TM Abstract- A novel short channel vert

Proceedings of the 5th European Microwave Integrated Circuits Conference Compact Variable Reflective-Type SiGe Phase Shifter Using Lumped Elements for 5GHz Applications K. Hettak1,G.A. Morin2 1 Communications Research Centre Canada, 3701 Carling Ave., P.O. Box 11490, Station "H", Ottawa, Ontario, Canada, K2H 8S2 khelifa.hettak-crc.ca 2 Defence R&D Canada ­ Ottawa, Ontario, Canada, K1A 0Z4 Gilbe

Proceedings of the 5th European Microwave Integrated Circuits Conference GaN-on-Si HEMTs Above 10 W/mm at 2 GHz together with high thermal stability at 325°C F. Medjdoub1*, D. Marcon1, J. Das1, J. Derluyn1, K. Cheng1, S. Degroote1, N. Vellas2, C. Gaquière2, M. Germain1 and S. Decoutere1 1 IMEC, Kapeldreef 75, B-3001 Leuven, Belgium * farid.medjdoub-imec.be 2 MC2-Technologies, 5 Rue du Colibri