Proceedings of the 4th European Microwave Integrated Circuits Conference A 0.13m CMOS Fractional-N Synthesizer for WiMAX Application Tzu-Chan Chueh, Wei-Hsien Chen, Da-Rong Huang SOC Technology Center, Industrial Technology Research Institute, HsinChu 310, Taiwan, R.O.C zzchuih-itri.org.tw chen1419-itri.org.tw TrendChip Technologies Corp. 2F,No.18, Prosperity Rd. 2, Science -Based Industrial Pa

Proceedings of the 4th European Microwave Integrated Circuits Conference Concurrent Dual Band 2.4/3.5GHz Fully Integrated Power Amplifier in 0.13µm CMOS Technology Mohammad Reza Ghajar#1, Slim Boumaiza#2 Emerging Radio System Group, University of Waterloo, Waterloo, N2L 3G1, ON, Canada 2 1 mrghaja-uwaterloo.ca sboumaiz-ecemail.uwaterloo.ca Abstract -- this paper proposes novel dual-band matching

Proceedings of the 4th European Microwave Integrated Circuits Conference A 5GS/s Voltage-to-Time Converter in 90nm CMOS Andrew R. Macpherson, Kenneth A. Townsend, James W. Haslett1 RFIC Research Group, Department of Electrical and Computer Engineering University of Calgary, Calgary, Alberta, Canada T2N1N4 1 haslett-atips.ca Abstract-- A voltage-to-time converter (VTC) is presented for use in a

Proceedings of the 4th European Microwave Integrated Circuits Conference Nanosecond pHEMT Switches Andrew Freeston, Costas Varmazis, Timothy Boles M/A-COM Technology Solutions 100 Chelmsford Street, Lowell, Massachusetts 01851, USA Andrew.Freeston-macomtech.com Costas.Varmazis-macomtech.com Timothy.Boles-macomtech.com Abstract -- In today's world of rapidly changing technology, systems are being

Proceedings of the 4th European Microwave Integrated Circuits Conference 90nm node RF CMOS technology with latch-up immunity on high-resistivity substrate N. Momo1, Y. Higashi2, M. Oda2, K. Matsuzawa2, K. Kokubun1, T. Ohguro1, H. S. Momose1, Y. Toyoshima1 2 Center for Semiconductor R&D, Semiconductor Company, Toshiba Corporation Advanced LSI Research Laboratory, Corporate R&D Center, Toshiba Cor

Proceedings of the 4th European Microwave Integrated Circuits Conference Comparison of 24 GHz Low-Noise Mixers in CMOS and SiGe:C Technologies Vadim Issakov 1 , Herbert Knapp 2 , Marc Tiebout 3 , Andreas Thiede 1 , Werner Simb¨ rger 2 , Linus Maurer 4 u 1 Dept. of High-Frequency Electronics, University of Paderborn, Warburgerstr. 100, D-33098 Paderborn, Germany 2 VIssakov-mail.uni-paderborn.de

Proceedings of the 4th European Microwave Integrated Circuits Conference Development of a High Q-Factor GaAs Flip Chip Varactor for Ka-Band Application David R. Hoag, Andrzej Rozbicki, James J. Brogle, and *Ralston S. Robertson and *Robert T. Lewis MA-COM Technology Solution, Lowell, MA, 01851, USA David.Hoag-macomtech.com Andrzej.Rozbicki-macomtech.com James.Brogle-macomtech.com *Raytheon Syste

Proceedings of the 4th European Microwave Integrated Circuits Conference Experimental Research into Non-Quasi-Static Phenomena in Monolithic pHEMT Devices T.M. Martín-Guerrero#1, A. Santarelli*2, C. Camacho-Peñalosa#3 # Departamento de Ingeniería de Comunicaciones, E.T.S. Ingeniería de Telecomunicación, Universidad de Málaga Campus de Teatinos, E-29071 Málaga, Spain 1 teresa-ic.uma.es, 3 ccp-ic

Proceedings of the 4th European Microwave Integrated Circuits Conference Analysis of Fin width and temperature dependence of flicker noise for bulk-FinFET T. Ohguro, K. Okano, T. Izumida, S. Inaba, N. Momo, K. Kokubun, H. S. Momose, and Y. Toyoshima Center for Semiconductor R&D, Semiconductor Company, Toshiba Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama, Japan tatsuya.ooguro-toshiba.co.jp Ab

Proceedings of the 4th European Microwave Integrated Circuits Conference All Gold Metallization System Enables High Power RF Pulsed Transistors with High Reliability Brian Battaglia, Dave Rice, Bishnu Gogoi HVVi Semiconductors, Phoenix, Arizona, USA brian.battaglia-hvvi.com dave.rice-hvvi.com bishnu.gogoi-hvvi.com Abstract-- A new silicon transistor has been developed that enables the design of h