Proceedings of the 4th European Microwave Integrated Circuits Conference Fast Physic Based Analysis of Multifinger MOSFETs with SB-SP combined method for Global Modeling Giorgio Leuzzi, Vincenzo Stornelli Department of Electrical and Information Engineering, University of L'Aquila, Monteluco di Roio ­ L'Aquila 67100, Italy giorgio.leuzzi-univaq.it vincenzo.stornelli-univaq.it Abstract-- In this w

Proceedings of the 4th European Microwave Integrated Circuits Conference RF-MEMS Tunable Filters on Low-Loss LTCC Substrate for UAV Data-Link William Gautier°1, Armin Stehle°, Bernhard Schoenlinner#, Volker Ziegler#, Ulrich Prechtel#, Wolfgang Menzel* °EADS Deutschland GmbH, Defence Electronics, Woerthstr. 85, D-89077 Ulm, Germany 1 william.gautier-eads.com # * EADS Deutschland GmbH, Innovatio

Proceedings of the 4th European Microwave Integrated Circuits Conference Study of Ohmic Contact Formation on AlGaN/GaN HEMT with AlN spacer on Silicon Substrate J-C. Gerbedoen1, A. Soltani1,#, M. Mattalah1, A. Telia 2, D. Troadec1, B. Abdallah3, E. Gautron3, J-C. De Jaeger1 IEMN, UMR-CNRS 8520, USTL, Cité scientifique, avenue Poincaré, 59652 Villeneuve d'Ascq, France 2 LMI, département d'électron

Proceedings of the 4th European Microwave Integrated Circuits Conference Temperature Drift Compensation Technique for a Hybrid LTCC Oscillator at 20 GHz Torben Baras #1 and Arne F. Jacob 2 now with: EADS Deutschland GmbH, Defence Electronics W¨ rthstrasse 85, 89077 Ulm, Germany, Phone: +49 731 392 4965 o 1 # torben.baras-eads.com Institut f¨ r Hochfrequenztechnik - Tech. Univ. Hamburg-Harburg

Proceedings of the 4th European Microwave Integrated Circuits Conference Efficiency enhancement of GaN power HEMTs by controlling gate-source voltage waveform shape A.Ramadan#1, A.Martin# , T.Reveyrand# , J-M.Nebus# , P.Bouysse# , L.Lapierre* , J.F Villemazet& , S.Forestier& # XLIM ­ UMR 6172, Université de Limoges/CNRS, 123 avenue Albert Thomas, 87060 Limoges, France 1 * alaaeddine.ramadan-xli

Proceedings of the 4th European Microwave Integrated Circuits Conference When New Needs for Satellite Payloads Meet with New Filters Architecture and Technologies H. Leblond1*, J.F. Villemazet1, J.L. Cazaux1, D. Pacaud1, J.J. Herren1, L. Rigaudeau2, L. Lapierre2, D. Baillargeat3, P.Blondy3 ,S.Bila3 ,S. Verdeyme3 ,C.Delage4 ,C. Quendo5 ,J.F.Favennec5 , B.Potelon5, E.Rius5,F.Seyfert6, S.Pacchini7 T

Proceedings of the 4th European Microwave Integrated Circuits Conference Influence of Gate Insulator Engineering on the Electronic Transport of AlGaN/GaN MISHFETs: A Simulation Study for Performance Optimization and Non Linear Device Modeling Ruchika Aggarwala1, Anju Agrawalb2, Mridula Guptaa3, R.S. Guptaa4 a Semiconductor Devices Research Laboratory, Department of Electronic Science, University

Proceedings of the 4th European Microwave Integrated Circuits Conference Class-A Power Amplifier Design Technique Based on Electron Device Low-Frequency Characterization Antonio Raffo#1, Sergio Di Falco#, Valeria Vadalà#, Francesco Scappaviva*2, Giorgio Vannini# # University of Ferrara ­ Department of Engineering Via Saragat 1, 44100 ­ Ferrara, Italy 1 antonio.raffo-unife.it * MEC s.r.l Viale

Proceedings of the 4th European Microwave Integrated Circuits Conference An Ultra Low Power CMOS Transceiver having a Short Range Wake-up for LR-WPAN Applications Yong-Il Kwon #1, Jindo Byun*2, Han-Jin Jo#3, Hai-Young Lee*4 Central R&D institute, SAMSUNG Electro-Mechanics, Maetan3-dong Youngtong-gu Suwon Gyunggi-do South Korea 1 3 # yikwon-samsung.com hanjin-samsung.com * Department of Electr

Proceedings of the 4th European Microwave Integrated Circuits Conference Multithrow Heterojunction PIN Diode Switches James J. Brogle, Daniel G. Curcio, David R. Hoag, Timothy E. Boles MA-COM Technology Solutions 100 Chelmsford St., Lowell, MA, 01851, USA James.Brogle-macomtech.com Daniel.Curcio-macomtech.com David.Hoag-macomtech.com Timothy.Boles-macomtech.com Abstract-- The novel use of an AlGa