Proceedings of the 4th European Microwave Integrated Circuits Conference Gate Technology and Substrate Property Influence on GaN HEMT Switch Device Performance Alessio Pantellini#1, Marco Peroni#1, Antonio Nanni#1, Antonio Cetronio#1, Andrea Bettidi#1, Ennio Giovine#2 #1 SELEX Sistemi Integrati SpA, Via Tiburtina Km.12,400, Rome 00131, Italy. 1 apantellini-selex-si.com #2 CNR-IFN, Via Cineto

Proceedings of the 4th European Microwave Integrated Circuits Conference Impulse Generator InGaP/GaAs HBT MMIC with Differential Output Port for Impulse UWB System Ryo Ishikawa #1 , Kazuhiko Honjo #2 # The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan 1 ishikawa-ice.uec.ac.jp 2 honjo-ice.uec.ac.jp Differential output impulse generator MMIC LSI BPF Wideband

Proceedings of the 4th European Microwave Integrated Circuits Conference RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements Alessandro Chini#1, Valerio Di Lecce#, Michele Esposto#, Gaudenzio Meneghesso*, Enrico Zanoni* # Department of Information Engineering, University of Modena and Reggio Emilia Via Vignolese 905, Modena, Italy 1 alessandro.chini-unimore.it

Proceedings of the 4th European Microwave Integrated Circuits Conference A Novel Integrated DPDT and 3-Way Active Splitter with a Unique Unpowered Loop Through State for Broadband Applications Alan Noll1, Ian Bisby2, John Newton3 MA-COM Technology Solutions, Lowell, MA, 01851 USA Alan.Noll-macomtech.com Ian.Bisby-macomtech.com 3 John.Newton-macomtech.com 2 1 Abstract-- A GaAs MMIC consisting of

Proceedings of the 4th European Microwave Integrated Circuits Conference Robust X-band LNAs in AlGaN/GaN technology J.P.B. Janssen1, M. van Heijningen1, G.C. Visser1, M. Rodenburg1, H.K. Johnson2, M.J. Uren2, E. Morvan3 and F.E. van Vliet1 TNO Defence, Security and Safety Oude Waalsdorperweg 63 Den Haag, The Netherlands 1 1 jochem.janssen-tno.nl 2 QinetiQ Ltd. Malvern, Worcestershire WR14 3PS,

Proceedings of the 4th European Microwave Integrated Circuits Conference A new nonlinear HEMT model for AlGaN/GaN switch applications O. Jardel 1 , G. Callet 2 , C. Charbonniaud 3 , J.C. Jacquet 1 , N. Sarazin 1 , E. Morvan , R. Aubry 1 , M.-A. Di Forte Poisson 1 , J.-P. Teyssier 2 , S. Piotrowicz 1 and R. Qu´ r´ 2 ee 1 1 Alcatel-Thales 3-5lab Route de Nozay, 91640 Marcoussis, France #olivier.j

Proceedings of the 4th European Microwave Integrated Circuits Conference New Fabrication Process to Manufacture RF-MEMS and HEMT on GaN/Si Substrate F.Crispoldi#1, A. Pantellini #2, S. Lavanga#2, A. Nanni#2, P. Romanini#2, L. Rizzi#1 , P. Farinelli#3, and C. Lanzieri#2 #2 Consorzio Optel Via Tagliamento 45, 00198 Rome, Italy SELEX Sistemi Integrati SpA, Via Tiburtina Km.12,400, Rome 00131, Italy

Proceedings of the 4th European Microwave Integrated Circuits Conference A 17W C-band High Efficiency High Power pHEMT Amplifier for Space Applications J.Lhortolary#1, Z.Ouarch#2, C.Chang#3, M.Camiade#4 # United Monolithic Semiconductors, Route départementale 128, BP 46, 91140 Orsay, France 1 julien.lhortolary-ums-gaas.com 2 zineb.ouarch-ums-gaas.com 3 christophe.chang-ums-gaas.com 4 marc.camia

Proceedings of the 4th European Microwave Integrated Circuits Conference Phase Error and Nonlinearity Investigation of Millimeter-Wave MEMS 7-Stage Dielectric-Block Phase Shifters N. Somjit1, G. Stemme, J. Oberhammer Microsystem Technology Laboratory, School of Electrical Engineering, KTH-Royal Institute of Technology SE 10044, Stockholm, Sweden 1 nutapong.somjit-ee.kth.se Abstract-- This paper

Proceedings of the 4th European Microwave Integrated Circuits Conference Characterization of gm-Dispersion and its Impact on Linearity of AlGaN/GaN HEMTs for Microwave Applications Michael Hosch #1 , Peter Lohmiller #2 , Andreas Trasser #3 , and Hermann Schumacher #4 # Institute of Electron Devices and Circuits, Ulm Universtiy Albert-Einstein-Allee 45, 89081 Ulm, Germany {1michael.hosch,2peter.