EuMC: Design of Highly Efficient, High Output Power, L-Band Class D^-1 RF Power Amplifiers Using GaN MESFET Devices
Ulf Gustavsson, Thomas Lejon, Christian Fager, Herbert Zirath
Proceedings of the 37th European Microwave Conference
Design of highly efficient, high output power, L-band class D-1 RF power amplifiers using GaN MESFET devices.
Ulf Gustavsson # 1 , Thomas Lejon 2 , Christian Fager #3 , Herbert Zirath #4
Ericsson AB Borgarfjordsgatan 18, SE-164 80 Stockholm, Sweden
1
ulf.gustavsson-ericsson.com 2 thomas.lejon-ericsson.com
Microwave Electronics Laboratory