A Realistic Large-Signal Microwave PHEMT Transistors Model for SPICE J.M. Zamanillo, H. Ingelmo, C. Perez-Vega and A. Mediavilla University of Cantabria, Communications Engineering Department (DICOM), Av. de los Castros s/n. 39005, Santander, Spain, Phone +34-942-200887 (commercial version for PC of the original Berkeley SPICE 2G code). This task has been divided into two parts: the first one, whi

A Low Cost SMT Integrated Frequency Doubler and Power Amplifier for 30GHz DBS Uplink Applications Monica Bhatnagar and Henrik Morkner Agilent Technologies, Inc. 350 W. Trimble Road, San Jose, California, 95131 USA Contact: Henrik Morkner, Phone: (408) 435-6513, FAX: (408) 435-4801 email: henrik_morkner-agilent.com Abstract ­ A SMT (Surface Mount Technology) MMIC (Monolithic Microwave Integrated Ci

A GaAsSb/InP HBT circuit technology J. Godin1, M. Riet1, A. Konczykowska1, P. Berdaguer1, M. Kahn 1, P. Bove2, H. Lahreche 2 R. Langer 2, M. Lijadi3, F. Pardo3, N. Bardou3, J-L. Pelouard3, C. Maneux4, M. Belhaj4, B. Grandchamp4, N. Labat4, A. Touboul4, C. Bru-Chevallier5, H. Chouaib5, T. Benyattou5 Alcatel-Thales III-V Lab, Route de Nozay, F-91461 Marcoussis Cedex ­ France, Jean.Godin-alcatel.fr 2

Electro-Thermal Model Extraction for MMIC Power Amplifiers ´ Germ´ n Torregrosa-Penalva1 , Alberto Asensio-L´ pez2 , Alvaro Blanco-del-Campo2 a o 1 ´ Universidad Miguel Hern´ ndez, Area de Teor´a de la Se~ al y Comunicaciones, a i n Avenida de la Universidad, Elche (Alicante), 03202, Spain, +34966658955. 2 Universidad Polit´ cnica de Madrid, Grupo de Microondas y Radar, e Depto. de Se~ ales, Siste

Lifetime characterization of capacitive power RF MEMS switches Afshin Ziaei (1), Thierry Dean (1), Yves Mancuso (2) 1 : Thales Research and Technology France, Domaine de Corbeville, 91404 Orsay Cedex, France 2 : Thales airborne systems, 2, avenue Gay-Lussac 78851 Elancourt, France ABSTRACT -- RF MEMS switches provide a low-cost, high performance solution to many RF/microwave applications and these

Dynamics of Electric Field Screening in Photoconductive THz Sources with Spatially Patterned Excitation Dae Sin Kim and D. S. Citrin Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, Georgia 30332 USA and Georgia Tech Lorraine, Technopole Metz 2000 2-3, rue Marconi 57070 Metz, France, Tel :404-894-9916 infinitely long parallel electrodes, between which is the

A New Non-Quasi-Static Non-linear MOSFET Model Based on Physical Analysis Darren R. Burke and Thomas J. Brazil Department of Electronic and Electrical Engineering, University College Dublin, Belfield, Dublin 4, Ireland e-mail: darren.burke-ucd.ie tel: +353 1 716 1914, fax: +353 1 283 0921 Abstract This paper presents a novel approach to the physical modelling of Si based sub-micron MOSFETs. The m

Nonlinear Model of Epitaxial Layer Resistor on GaAs Substrate Yu Zhu, Cejun Wei, Oleksiy Klimashov, Cindy Zhang, and Yevgeniy Tkachenko Skyworks Solution Inc., 20 Sylvan Road, Woburn, MA 01801, USA Abstract -- A large signal model is proposed for GaAs epitaxial layer resistor, which can be used in resistor design, characterization and circuit simulation. The resistor I-V behavior can be excellent

Accelerating the Transient Simulation of Semiconductor Devices Using Filter-Bank Transforms Masoud Movahhedi and Abdolali Abdipour Microwave/mm-wave & Wireless Communication Research Lab. Department of Electrical Engineering, AmirKabir University of Technology, Tehran, Iran. Phone: +98-21-646 6009, E-mail: movahhedi-aut.ac.ir, abdipour-aut.ac.ir Abstract-- Using fully or semi-implicit schemes to

Active Safety: the impact of SARA for future advances in the field Gerhard Rollmann, Holger H. Meinel, Dieter Schoch DaimlerChrysler AG, D-70546 Stuttgart. Germany Email : holger.meinel-daimlerchrysler.com Abstract - This paper gives an overview on recent development trends and future European initiatives in the area of automotive e-Safety. Short range radar (SRR) for novel safety and comfort sys