InP/InGaAs Resonant Tunneling Diode with Six-Route Negative Differential Resistances Jung-Hui Tsai1, Yu-Chi Kang1, and Wen-Shiung Lour2 National Kaohsiung Normal University, Department of Physics, 116, Ho-ping 1st Road, Kaohsiung 802, TAIWAN, Republic of China, TEL: +886-7-6051390 2 National Taiwan Ocean University, Department of Electrical Engineering, 2 Peining Road, Keelung 202, TAIWAN, Republi

GaAs MMICs for use in Upconverter module for Ka-band OBS Satellite Transponders Jin-Cheol Jeong, Dong-Pil Chang, Dong-hwan Shin, In-Bok Yom Global Area Wireless Technology Group, ETRI, 161 Kajong-Dong, Taejon, 305-350, KOREA, +82-42-860-6422 Abstract -- GaAs MMICs has been developed for use in the Upconverter module for On-Board Switching Ka-band Satellite Transponders. There are four kinds of MM

Design of Broadband, Highly Integrated, 20-30 GHz and 35-45 GHz MMIC Up-converters Emmanuelle Convert, Paul Beasly, Simon Mahon, Anna Dadello, James Harvey Mimix Broadband Inc. 10795 Rockley Road, Houston, Texas 77099, USA Ph. +61 2 9956 3388 - Fax +61 2 9956 3399 email: econvert-mimixbroadband.com Abstract -- The design of broadband, highly integrated up-converters is described. Two up-converters

RLC Parasitic Extraction and Circuit Model Optimization for Cu/SiO 2-90nm Inductance Structures Hazem Mahmoud Hegazy Technical Marketing Engineer, Mentor Graphics hazem_hegazy-mentor.com Abstract An efficient interconnects modeling and optimization methodology is proposed for multi-GHz clock network design. High frequency effects, including inductance and proximity effects are captured. The resul

A 4.8-6 GHz IEEE 802.11a WLAN SiGe-Bipolar Power Amplifier with On-chip Output Matching Winfried Bakalski1, Andriy Vasylyev2, Werner Simb¨ rger1 , Marcus K¨ ll1 , Alfons Schmid1, Krzysztof Kitlinski1 u a Infineon Technologies AG, P.O. Box 80 09 49, 81609 Munich, Germany, Tel. +49 89 234 27961, Winfried.Bakalski-infineon.com 2 Brandenburg University of Technology Cottbus, Chair of Circuit Design, C

High Gain 110-GHz Low Noise Amplifier MMICs using 120-nm Metamorphic HEMTs and Coplanar Waveguides A. Bessemoulin1,4, P. Fellon1, J. Gruenenpuett1,3, H. Massler2, W. Reinert2, E. Kohn3, and A. Tessmann2 1 2 United Monolithic Semiconductors S.A.S, route départementale 128 ­ BP46, 91401 Orsay Cedex, France Fraunhofer­Institute for Applied Solid-state Physics (IAF), Tullastraße 72, D-79108, Freiburg

Extraction of Small Signal Equivalent Circuit Model Parameters for Statistical Modeling of HBT Using Artificial Neural H. Taher, D. Schreurs and B. Nauwelaers K.U.Leuven, div. ESAT-TELEMIC, Kasteelpark Arenberg 10, B-3001, Leuven-Heverlee, Belgium, Tel: +32 16 32 85 50, Fax: +32 16 321986, e-mail: hany.taher-esat.kuleuven.ac. Abstract--We found different performances for the same device due to th

Low Noise and High Linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN Seong-Sik Myoung1, Sang-Hoon Cheon2, Jong-Gwan Yook1 1 2 Dept. of Electrical and Electronic Eng. Yonsei Univ., Seoul 120-749, Korea, 82-2-2123-3565 Knowledge*ON Semiconductor Inc., Eoyang-dong, Iksan 570-210, Korea, 82-63-839-1163 II. DESIGN AND IMPLEMENTATION This paper presents a low noise figure and high linearity LNA ba

Design and Fabrication of Short Gate-Length Heterostructure Charge Coupled Devices for Transversal Filter Applications Hiang Teik Tan , Ian C. Hunter , Christopher M. Snowden and Richard Ranson 1 1 1 2,3 3 University of Leeds, Institute of Microwaves & Photonics, School of Electronic & Electrical Engineering, LS2 9JT Leeds, United Kingdom 2 University of Surrey, GU2 7XH, Guildford, Surrey, Un

Characterization of Various shaped 5 GHz TFBARs Based on 3D Full-wave Modeling Yong-Dae Kim1, Kook-Hyun Sunwoo2 , Sung-Hoon Choa2, Duck-Hwan Kim2, In-Sang Song2, Jong-Gwan Yook1 1 Dept. of Electrical and Electronic Eng., Yonsei Univ., 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea 2 MEMS Lab, Samsung Advanced Insitute of Technology, Mt, 14-1, Nongseo-Ri, Giheung-Eup, Gyeonggi-Do, 449-712,