A High-Efficiency HBT-based Class-E Power Amplifier for 2 GHz Dusan Milosevic, Johan van der Tang and Arthur van Roermund Eindhoven University of Technology, Mixed-signal Microelectronics Group, 5600 MB Eindhoven, The Netherlands Phone: + 31 40 247 3393 E-mail: d.milosevic-tue.nl Abstract -- A Class-E power amplifier (PA) based on a GaAs heterojunction bipolar transistor (HBT) is presented. The si

Thermal management of power HBT in pulsed operating mode D. Floriot1, J-C. Jacquet1, E. Chartier1, J-M. Coupat2, P. Eudeline2 P. Auxemery3, H. Blanck3 1 2 3 Alcatel-Thales III-V lab, Rte de Nozay, 91461 Marcoussis Cedex, France. Thales Airborne Defense ­ Z.I. du mont Jarret ­ 76520 Ymare, France United Monolithic Semiconductor, Domaine de Corbeville, RD 128, 91404 Orsay Cedex, France. Abstract

A 3D wideband package solution using MCM-D BCB technology for tile TR module T. Barbier(1), F. Mazel(2), B. Reig(3), P. Monfraix(4) Thales Airborne Systems, ­ 2, avenue Gay-Lussac 78851 Elancourt ­ France (2) Thales Microwave, ­ 29, avenue Carnot 91349 Massy cedex ­ France (3) Thales Research and Technologies, ­ Domaine de Corbeville 91404 Orsay cedex ­ France (4) Alcatel Space Industries, ­ 26, a

A monolithic integrated 180 GHz SiGe HBT Push-Push Oscillator. P. ROUX1, Y. BAEYENS2 , O. WOHLGEMUTH3 and Y.K. CHEN2. Lucent Technologies ­ Bell Laboratories, 16 Av. Descartes, 92352 Le Plessis Robinson, France. Lucent Technologies ­ Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974, USA. 3 Lucent Technologies ­ Optical networking group, Thurn and Taxis Strasse 10, Nuernberg, 90411 Germa

Electromechanical Modelling of High Power RFMEMS Switches with Ohmic Contact S. G. Tan1, E. P. McErlean1, J. -S. Hong1, Z. Cui2, L. Wang2, R. B. Greed3, D. C. Voyce3, 1 Department of Electrical, Electronic and Computer Engineering, Heriot-Watt University Edinburgh, EH14 4AS, U.K. 2 3 Central Microstructure Facility, Rutherford Appleton Laboratory, Didcot, U.K Advanced Technology Research Centr

Low cost MMIC chipset for VSAT ground terminals Y. Butel, D. Langrez, J.F. Villemazet, G. Coury, J. Decroix, J.L. Cazaux Alcatel Space - 26 Av. JF Champollion -BP 1187 - 31037 Toulouse ­ France, (33) 0534353637 Abstract -- This paper presents results of a Ka-band VSAT Ground Terminal MMIC chipset developed in a cost reduction context. The first one, a Low Level Multifunction designed for up-conve

Analysis of Buffer-Trapping Effects on Current Reduction and Pulsed I-V Curves of GaN FETs H. Takayanagi, H. Nakano and K. Horio Shibaura Institute of Technology, Department of Electronic Information Systems 307 Fukasaku, Minuma-ku, Saitama 337-8570, Japan (Phone: +81-48-687-5813) Abstract -- Two-dimensional transient analyses of GaN MESFETs are performed in which a three level compensation model

A Power Efficient Active K Band Mixer Meik Huber, Stefan von der Mark, and Georg Boeck Technische Universitaet Berlin, Microwave Engineering Lab, Sekr. HFT 5-1, Einsteinufer 25, 10587 Berlin, Germany huber-mwt.ee.tu-berlin.de reduce 1/f noise. For the design we used 2x10 µm transistors operable at collector currents down to 2 mA. III. MIXER DESIGN Vcc Abstract -- An energy efficient K band GaAs-H

A cost-effective 10 Watt X-band High Power Amplifier and 1 Watt Driver Amplifier Chip-set A.P. de Hek, G. van der Bent, M. van Wanum, F.E. van Vliet TNO Defence, Security and Safety, Oude Waalsdorperweg 63, 2509 JG The Hague, The Netherlands, Phone: 31.70.374.0409, Email: peter.dehek-tno.nl Abstract -- An X-band power amplifier chip-set for communication and radar applications has been developed

A Novel Linearizing Technique Using Dual Diode Based Linearizers for Lightweight Power Amplifiers T. KASHIWA, Y. OHNISHI, K. YAMAMOTO and H. OHSHIMA FURUNO ELECTRIC CO., LTD., 9-52 Ashihara-cho, Nishinomiya, Hyogo 662-8580, Japan Abstract -- A novel way to compensate the distortion of Power Amplifier(PA) modules is presented in this paper. A diode linearizer with an inductor is used to compensate