Time-Domain Neural Network Characterization for Dynamic Behavioral Models of Power Amplifiers G.Orengo1, P.Colantonio1, A.Serino1, F.Giannini1, G.Ghione2, M.Pirola2, G.Stegmayer2 1 Dpt. Ingegneria Elettronica, Univ. Tor Vergata, via Politecnico 1, 00133 Roma, Italy, orengo-ing.uniroma2.it 2 Electronics Dpt, Politecnico, Cso. Duca degli Abruzzi 24, 10129 Torino, Italy, marco.pirola-polito.it analy

Electromechanical Resonances of SiC and AlN Beams under Ambient Conditions K. Brueckner1, Ch. Förster2, K. Tonisch2, V. Cimalla2, O. Ambacher2, R. Stephan1, K. Blau1, and M. A. Hein1 Department for RF and Microwave Techniques 2 Department of Nanotechnology Centre for Micro- and Nanotechnologies Technische Universität Ilmenau, P.O. Box 100565, 98684 Ilmenau, Phone +49 (3677) 69-1580 1 Abstract --

Verification of a Frequency Dispersion Model in the Performance of a GaAs pHEMT Travelling-Wave MMIC I. Kallfass1 , C. Zhang1 , J. Gr¨nenp¨tt2 , C. Teyssandier3 , H. Schumacher1 u u 1 Department of Electron Devices and Circuits, University of Ulm Albert-Einstein-Allee 45, 89069 Ulm, Germany 2 United Monolithic Semiconductors GmbH, Ulm, Germany 3 United Monolithic Semiconductors SAS, Orsay, France

A 3.2 W Coplanar Single-Device X-Band Amplifier with GaAs HBT F. Lenk, H. Klockenhoff, P. Kurpas, A. Maaßdorf, H. J. W¨ rfl, and W. Heinrich u Ferdinand-Braun-Institut (FBH), D-12489 Berlin / Germany, Email: f.lenk-ieee.org Abstract-- High-power GaInP/GaAs HBTs with high breakdown voltage for X-Band applications are presented. To demonstrate the capabilities of these devices, a simple monolithic

Uncertainty Estimation in SiGe HBT Small-Signal Modeling Syed M. Masood, Tom K. Johansen, Jens Vidkjær, Viktor Krozer (Student Paper) Technical University of Denmark, Oersted-DTU, Department of Electromagnetic Systems, Oersteds Plads 348, 2800 Kgs. Lyngby, Denmark Abstract-- An uncertainty estimation and sensitivity analysis is performed on multi-step de-embedding for SiGe HBT smallsignal modeling

Implementation of non-conventional nonlinear models for electron devices in commercial CAD tools D. Resca2, R. Cignani2,4, A. Raffo1,3, A. Santarelli2, G. Vannini1 1 University of Ferrara ­ Department of Engineering ­ Via Saragat, 1 - 44100 Ferrara - Italy 2 University of Bologna ­ DEIS ­ Viale Risorgimento, 1 ­ 40136 Bologna - Italy CoRiTeL, Via Anagnina 203, 00040 Morena (Roma) ­ Italy 4 MEC S.

A Comparative Study of Active and Passive GaAs Microwave Couplers L Krishnamurthy, Q Sun, V T Vo, G Parkinson, D K Paul, K Williams, A A Rezazadeh The Electromagnetic Centre for Microwave and mm-Wave Designs and Applications, School of Electrical and Electronic Engineering, The University of Manchester, Sackville Street, PO Box 88, Manchester, UK, M60 1QD [tel: +44 (0)161 306 4708 Fax +44 (0)161 3

Frequency domain-based extraction method of oneport device's non-linear state functions from largesignal measurements T.M. Martín-Guerrero, C. Camacho-Peñalosa Departamento de Ingeniería de Comunicaciones, E.T.S. Ingeniería de Telecomunicación Universidad de Málaga, Campus de Teatinos, E-29071 Málaga (Spain), +34 952 131 311, teresa-ic.uma.es Abstract -- A novel frequency domain-based method for

Substrate Effects in Wideband SiGe HBT Mixer Circuits T. K. Johansen, V. Krozer, J. Vidkjær, T. Djurhuus Oersted-DTU , Department of Electromagnetic Systems Technical University of Denmark -- 2800 Kgs. Lyngby, Denmark Abstract-- In this paper the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate ne

A Microstrip X-Band AlGaN/GaN Power Amplifier MMIC on s.i. SiC Substrate F. van Raay, R. Quay, R. Kiefer, W. Fehrenbach, W. Bronner, M. Kuri, F. Benkhelifa, H. Massler, S. Müller, M. Mikulla, M. Schlechtweg, and G. Weimann Fraunhofer Institute of Applied Solid-State Physics, Tullastr. 72, D-79108 Freiburg, Germany, phone: ++49-761-5159-334, fax: ++49-761-5159-565, email: vanraay-iaf.fraunhofer.de