A Novel Technique for Obtaining LO and RF (LSB) Rejection in 25-40 GHz Microwave Up Conversion Mixers Based on the Concepts of Distributed and Double Balanced Mixing M. Mehdi1, C. Rumelhard1, J. L. Polleux1, B. Lefebvre2 1 2 ESYCOM - Photonic and Microwave Group, Champs / Marne 77420, France United Monolithic Semiconductors, Thales Group - BP46, Orsay 91401, France Abstract -- In this paper a n

An Active Balun for High-CMRR IC Design Francesco Centurelli1, Raimondo Luzzi2, Piero Marietti1, Giuseppe Scotti1, Pasquale Tommasino1, Alessandro Trifiletti1 1 University of Rome "La Sapienza", Department of Electronic Engineering, Via Eudossiana 18, I-00184 Roma, Italy, +39 06 44585679 2 Infineon technologies Austria AG, Development Center Graz, Babenberger Str. 10, A-8020 Graz, Austria, +43 05

System-Level Simulation of a Noisy Phase-locked Loop Frank Herzel and Maxim Piz IHP Im Technologiepark 25, 15236 Frankfurt (Oder), Germany Tel.: +49 5625765, e-mail: herzel-ihp-microelectronics.com Abstract-- This paper presents a compact model of a noisy phase-locked loop (PLL) for inclusion in a timedomain system simulation. The phase noise of the reference is modeled as a Wiener process, and t

Large-Signal Behavioral Model of a Packaged RF Amplifier Based on QPSK-Like Multisine Measurements Maciej Myslinski1, Dominique Schreurs1, Kate A. Remley2, Michael D. McKinley2, Bart Nauwelaers1 K.U.Leuven, Div. ESAT-TELEMIC, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium e-mail: maciej.myslinski-esat.kuleuven.ac.be; phone: +32-16-321117; fax: +32-16-321986 2 National Institute of Standards and T

10 Gbit/s Differential Amplifier Demonstrating Striplines in 0.18µm CMOS Technology B. Milivojevic, Z. Gu, A. Thiede University of Paderborn, Department of High Frequency Electronic Warburger Street 100, 33098 Paderborn, Germany milivojevic-ont.upb.de Abstract -- We demonstrate the differential amplifier using striplines in 0.18µm CMOS technology. A test circuit has single-phase gain of 6 dB and

Multilayer RF PCB for Space Applications : technological and interconnections trade-off M. Paillard 1 , F. Bodereau 1, C. Drevon 1, P. Monfraix 1, J.L. Cazaux 1 L.Bodin 2, P. Guyon 2 Alcatel Space, 26 Avenue Champollion, BP1187, F-31037 Toulouse, France mathieu.paillard-space.alcatel.fr, Tel : +33 (0)5 34 35 37 73, Fax: +33 (0)5 34 35 69 47 2 Cimulec, Z.I "les Jonquières", F-57365 Ennery, France l

Modelling of a 4-18GHz 6W Flip-Chip Integrated Power Amplifier based on GaN HEMTs Technology Sandra De Meyer1, Audrey Philippon1, Michel Campovecchio1, Christophe Charbonniaud1, Stéphane Piotrowicz2, Didier Floriot2, Raymond Quéré1 1 IRCOM-MITIC, CNRS UMR 6615, 123 Avenue A. Thomas, 87000 Limoges, France, (33)5-55-45-77-34 2 Thalès-TRT-MITIC, Domaine de Corbeville, 91404 Orsay Cedex, France, (33)

A low-noise X-band microstrip VCO with 2.5 GHz tuning range using a GaN-on-SiC p-HEMT A.P.M. Maas, F.E. van Vliet TNO Defence, Security and Safety, Oude Waalsdorperweg 63, 2597 AK Den Haag, Netherlands, +31703740000 III. OSCILLATOR DESIGN The VCO design is based on the negative impedance approach. The transistor is embedded in a network with source series feedback, effectively creating a negative

60 GHz GaAs MMIC mixers with integrated LO buffer A.P.M. Maas, J.A. Hoogland TNO Defence, Security and Safety, Oude Waalsdorperweg 63, 2597 AK Den Haag, Netherlands, +31703740000 Abstract -- Using the 0.15 µm GaAs mHEMT process from WIN semiconductors, two 60 GHz down-conversion mixers have been designed, processed and measured. Both designs include a LO buffer amplifier to allow for a reduced ext

A W-band MMIC amplifier using 70-nm gate length InP HEMT technology Mikael Malmkvist, Anders Mellberg, and Jan Grahn Chalmers University of Technology, MC2, Microwave Electronics Laboratory, Kemivägen 9, SE-412 96 Göteborg, Sweden, Phone +46 31 772 10 00 Abstract -- InP HEMT transistors using 70-nm gate length have been fabricated and modeled. Two different epitaxial structures have been tested b