A Fully Integrated SiGe Low Phase Noise Push-Push VCO for 82 GHz Robert Wanner , Herbert Schäfer , Rudolf Lachner , Gerhard R. Olbrich and Peter Russer Universität München, Lehrstuhl für Hochfrequenztechnik Arcisstrasse 21, 80333 München, Germany Infineon Technologies AG, München, Germany E-mail: wanner-tum.de, Phone: +49-89-289-23367, Fax: +49-89-289-23365 Technische Abstract-- We present a fu

On-Chip GaAs-HBT Broadband-Coupled High-Bitrate Modulator Driver TWAs C. Meliani, M. Rudolph, and W. Heinrich Ferdinand-Braun-Institut für Hoechstfrequenztechnik (FBH), 12489 Berlin / Germany Email: meliani-fbh-berlin.de Abstract -- A technique to connect two broadband GaAs HBT TWAs is presented. It covers the full range from DC to high frequency and is suitable for high bitrate (40 Gb/s) transmis

A V band singly balanced diode mixer for space application C. Florian1-3, F. Scappaviva3, M. Feudale2, V.A. Monaco1, F. Filicori1 DEIS, University of Bologna, Bologna, 40136 Viale Risorgimento 2, Italy, tel. +390512093846, cflorian-deis.unibo.it, vmonaco-deis.unibo.it, filicori-deis.unibo.it 2 Alenia Spazio, Roma, 00131 Via Saccomuro 24, Italy, tel. +390641514107, m.feudale-roma.alespazio.it 3 MEC

A 45 dB Variable Gain Low Noise MMIC Amplifier M. Anowar Masud*, Herbert Zirath*,#, Matthew Kelly* * Chalmers University of Technology, Microwave Electronics Laboratory, 412 96 Gothenburg, Sweden # Ericsson AB, Microwave and High Speed Research Center, 431 84 Mölndal, Sweden Abstract -- A variable gain amplifier operating at 2.5 GHz based on Single Ended topology has been designed and characterize

A Ku Band Monolithic Power Amplifier for TT&C Applications C.Florian1-2, R.Cignani2-3, G.Vannini3, M.C.Comparini4 1 University of Bologna, DEIS, Bologna, 40136 Viale Risorgimento 2, Italy, cflorian-deis.unibo.it; 2 MEC s.r.l., Bologna, Viale Pepoli 3/2, Italy, corrado.florian-mec-mmic.com; 3 University of Ferrara, Department of Engineering, Ferrara, 44100 Via Saragat 1, Italy, rcignani-ing.unife.

A metamorphic GaAs HEMT Distributed Amplifier with 50 GHz Bandwidth and low Noise for 40 Gbits/s optical receivers G. Wolf1, S. Demichel2, R. Leblanc2, F. Blache3, R. Lefèvre3, G. Dambrine1, and H. Happy1 Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN), département Hyperfréquences et Semiconducteurs, U.M.R. C.N.R.S. 8520, BP69 F-59652, Villeneuve d'Ascq Cedex, France, e-m

Digital SiGe-Chips for Data Transmission up to 85 Gbit/s O. Wohlgemuth, W. Müller, P. Paschke, T. Link, R. Lederer, B. Kolb, H. Dotzauer Lucent Technologies, Thurn-und-Taxis-Str. 10, 90411 Nuremberg, Germany Phone: +49 911 5263814, Fax +49 911 5264823, email: ow2-lucent.com Abstract -- Design and performance of a 2:1 multiplexer and 1:2 demultiplexer IC up to 85.4 Gbit/s are presented. The chips

Novel SPICE Macro Modeling for an Integrated Si Schottky Barrier Diode Janam Ku1, Younghoon Min1, Donghyun Lee1, Iljong Song1, Dongsig Shim1, Namkyoung Lee1, Seonghearn Lee2, Yongtaek Lee2, Munsung Choi2 and Jonghyck Kim2 Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea Phone: +82-31-280-9438 FAX: +82-31-280-9473 E-mail: kujanam-samsung.com 2 Department of Electronic En

A Novel Package Approach for Multichip Modules based on Anisotropic Conductive Adhesives Johann Heyen1, and Arne F. Jacob2 1 Now with: EPCOS AG, Surface Acoustic Wave Components, Multilayer Integrated Products, Modules and Special Products, Anzinger Straße 13, 81617 Munich, Germany, +49(0)89-636-28386, johann.heyen-epcos.com Arbeitsbereich Hochfrequenztechnik, Technische Universität Hamburg-Harbu

A 17 to 26 GHz Micromixer in SiGe BiCMOS Technology Mingquan Bao and Yinggang Li Microwave and High Speed Electronics Research Center, Ericsson Research, Ericsson AB, Flöjelbergsgatan 2A, SE-431 84 Mölndal, Sweden, Phone: 0046-31-7472057 Abstract--We report, for the first time, our experimental results of a high frequency Micromixer operating from 17 to 26 GHz in SiGe technology. Good linearity pe