Carbon Nanotubes for RF and Microwaves P.J. Burke, Z. Yu, and C. Rutherglen Integrated Nanosystems Research Facility Department of Electrical Engineering and Computer Science University of California, Irvine, CA 92697 Abstract -- In this invited overview paper we provide a brief up-to-date summary of the potential applications of carbon nanotubes for RF and microwave devices and systems. We focus

Stress-Induced Failure Modes in High-Tuning Range RF MEMS Varactors Trushal Chokshi and Dimitrios Peroulis School of Electrical and Computer Engineering, and Birck Nanotechnology Center Purdue University, West Lafayette, USA tchokshi-purdue.edu, dperouli-purdue.edu Abstract-- In this paper we focus on electromechanical modeling of high-tuning range MEMS varactors with a focus on failures caused by

An Integrated Double Balanced Mixer on Multilayer Liquid Crystalline Polymer (M-LCP) Based Substrate Wansuk Yun1, Vinu Govind1 , Sidharth Dalmia2, Venky Sundaram1, Madhavan Swaminathan1, and George E. White2 1 Georgia Institute of Technology, Electrical and Computer Engineering, Atlanta, GA 30332, U.S.A, 404-385-6417 2 Jacket Micro Devices, Suite 213, 75 5th Street, Altanta, GA 30308, USA, 404-52

DC ­ 65 GHz Characterization of Nanocrystalline Diamond Leaky Film for Reliable RF MEMS Switches 1 School Joolien Chee1,3 , Ratnakar Karru1,3 , Timothy S. Fisher2,3 , and Dimitrios Peroulis1,3 of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA 2 School of Mechanical Engineering, Purdue University, West Lafayette, IN 47907, USA 3 Birck Nanotechnology Center, P

InP/GaAsSb/InP DHBT Monolithic Transimpedance Amplifier with Large Dynamic Range Xin Zhu1, Jing Wang1 and Dimitris Pavlidis1,2 University of Michigan, Department of Electrical Engineering and Computer Science, 1301 Beal Avenue, Ann Arbor, MI 48109-2122, USA. 2 Department of High Frequency Electronics, Institute of Microwave Engineering, Technische Universität Darmstadt, Merckstrasse 25, D-64283 Da

SPDT RF MEMS Switch Using A Single Bias Voltage And Based On Dual Series And Shunt Capacitive MEMS Switches T. Ketterl 1 and T. Weller 2 University of South Florida, Center for Ocean Technology, 140 7th Ave. S., St. Petersburg, FL 33701, USA, (727) 553-1288 2 University of South Florida, Department of Electrical Engineering, 4202 E. Fowler Ave., Tampa, FL 33613, USA (813) 974-4851 switch only need

A Wideband Balanced AlGaN/GaN HEMT MMIC Low Noise Amplifier for Transceiver Front-ends Sanghyun Seo1,2, Dimitris Pavlidis1,2 and Jeong-Sun Moon3 University of Michigan, Department of Electrical Engineering and Computer Science, 1301 Beal Ave., Ann Arbor MI 48019-2122, USA, 2 Department of High Frequency Electronics, Institute of Microwave Engineering, Technische Universität Darmstadt, Merckstrasse

Highly Linear 20 GHz-Micromixer in SiGe Bipolar Technology (1) M.N. Do, (1,2)D. Dubuc, (1)A. Coustou, (1,2)E. Tournier, (3)P. Ancey and (1,2)R. Plana LAAS-CNRS - 7, avenue du C. Roche 31077 TOULOUSE - France - Tel. : +33 (0)5 61 33 69 22 Paul Sabatier University - 118, route de Narbonne 31062 TOULOUSE - France - Tel. : +33 (0)5 61 55 66 11 (3) STMicroelectronics - 850, rue Jean Monnet F-38926 CR

A Novel Wideband MMIC Voltage Controlled Attenuator with a Bandpass Filter Topology Scarlet M. Daoud1, Member, IEEE, and Prasad N. Shastry (S. N. Prasad)2, Senior Member, IEEE US Monolithics, 325 E. Elliot Rd. Suite 30, Chandler, AZ 85225, USA, Tel: +1(480)539-2540 ext.146, Fax: +1(480)539-2547, sdaoud-usmonolithics.com 2 Department of Electrical and Computer Engineering, Bradley University, 1501

A Measurement System for FET Derivative Extraction under Dynamic Operating Regime R. Peña, C. Gómez and J. A. García University of Cantabria, Communications Engineering Department Av. Los Castros s/n, 39005 Santander, (SPAIN) e-mail: roberto.pena-unican.es; cgomez-sodercan.com; joseangel.garcia-unican.es the design process of non class-A power amplifiers. Current derivative extraction procedures a