Status of AlGaN/GaN HEMT Technology-A UCSB perspective Umesh K. Mishra ECE Department, UCSB, Santa Barbara, CA 93106 Funded by ONR, AFOSR and DARPA The following major technological advances (i) (ii) (iii) (iv) the ability to grow high quality materials on sapphire and SiC, the advent of SiN passivation to eliminate current slump or dispersion, advanced processing, and implementation of field plat

Are We There Yet ? ­ A Metamorphic HEMT and HBT Perspective Geok Ing Ng 1,2, K. Radhakrishnan 2 and Hong Wang2 1 MMIC Design Centre, Temasek Laboratories-NTU, Research TechnoPlaza, BorderX, 8th & 9th Storey, Nanyang Technological University, 50 Nanyang Drive, Singapore 637553, Tel:(65) 6316 2937 2 School of Electrical and Electronic Engineering, Nanyang Technological University, Blk S1 Nanyang

An overview of microwave component requirements for future space applications A. R. Barnes, A. Boetti, L. Marchand and J. Hopkins Components Division, Product Assurance and Safety Department, ESTEC, The European Space Agency, Noordwijk, The Netherlands Email : andrew.barnes-esa.int Abstract - New and emerging microwave component developments and their potential impact upon payload implementation f

GaN-based FETs for Microwave High-Power Applications Hidenori Shimawaki and Hironobu Miyamoto Advanced HF Device R&D Center, R&D Association for Future Electron Devices, c/o System Devices Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu, Shiga 520-0833, Japan, Phone +81-77-537-8671 Abstract -- The present status of GaN-based FETs has been described with a focus on microwave high-power p

High Power/High Bandwidth GaN MMICs and Hybrid Amplifiers: Design and Characterization F. van Raay, R. Quay, R. Kiefer, H. Walcher, O. Kappeler, M. Seelmann-Eggebert, S. Müller, M. Schlechtweg, and G. Weimann Fraunhofer Institute of Applied Solid-State Physics, Tullastr. 72, D-79108, Freiburg, Phone: ++49-761-5159-334 Abstract -- Broadband microstrip and coplanar MMIC amplifiers featuring beyond

Progress in Microwave GaN HEMT grown by MBE on Silicon and Smart Cut TM Engineered Substrates for High Power Applications H. Larhèche 1, B. Faure 2, C. Richtarch 2, F. Letertre 2 , R. Langer 1, P. Bove 1 1 Picogiga International, Place Marcel Rebuffat, Villejust 91971 Courtaboeuf cedex 7, FRANCE 2 SOITEC S.A. Parc Technologique des Fontaines F-38926 Crolles cedex, FRANCE low density dislocation

GaN H-FET development at QinetiQ T Martin1, M J Uren1, R S Balmer1, D Soley1, D J Wallis1, K P Hilton1, J O Maclean1, A G Munday1, A J Hydes1, D G Hayes1, C H Oxley2, P McGovern3, P J Tasker3 QinetiQ Ltd, Malvern, Worcestershire WR14 3PS, UK, +44 1684 89 5288 De Montfort University, Engineering Department, Leicester LE1 9BH, UK 3 Cardiff University, School of Engineering, Cardiff CF24 0YF, UK 1 2

KORRIGAN - A Comprehensive Initiative for GaN HEMT Technology in Europe G. Gauthier1, Y. Mancuso1 and F. Murgadella2 1 Thales Airborne Systems, 2 av. Gay-Lussac, 78851 Elancourt, France email: gildas.gauthier-fr.thalesgroup.com 2 DGA/D4S/SRTS, 8 bd Victor, 75015 Paris, France email: francois.murgadella-dga.defense.gouv.fr materials and GaN-based processes and devices. The GaN, GaAlN, InGaN semic

Developments in Predistortion and Feedforward Adaptive Power Amplifier Linearisers M. O'Droma1, E. Bertran2, M. Gadringer3, S. Donati4, A. Zhu5, P. L. Gilabert2, J. Portilla6 1 University of Limerick, Ireland; 2Universitat Politècnica de Catalunya; 3Vienna University of Technology, Austria; 4 Politecnico di Torino, Italy; 5University College Dublin, Ireland, 6University of the Basque Country, Spa

TX system-level analysis by behavioral modeling of RF building blocks: the IEEE802.11a and IEEE802.15.3a case studies A. Cidronali1, M.Camprini1, I.Magrini1, E. Bertran2, N. Athanasopoulos3, R. Makri3, R. Cignani4, G. Vannini4, J. Portilla5, P. Casas5, K. Vryssas3, A. Samelis6, G. Manes1 1 2 Dept. Electronics and Telecomm., Univ. of Florence, V.S. Marta 3, Firenze, 50139, Italy; Dept. of Signal T