Reliability of RF-MEMS Roberto Gaddi1, Antonio Gnudi1, Augusto Tazzoli2, Gaudenzio Meneghesso2, Enrico Zanoni2 1 ARCES-DEIS, University of Bologna, Viale Risorgimento 2, 40136 Bologna, Italy, +390512093049 2 DEI, University of Padova, Via Gradenigo 6/B, 35131 Padova, Italy, +390498277653 technologies such as Radant MEMS [2], MIT Lincoln Labs or Raytheon. As a result, some commercial products are

AlGaN/GaN High Electron Mobility Transistor (HEMT) Reliability Dimitris Pavlidis1,2, Pouya Valizadeh2 and S. H. Hsu3 Department of High Frequency Electronics, Institute of Microwave Engineering, Technische Universität Darmstadt, Merckstrasse 25, D-64283 Darmstadt, Germany 2 University of Michigan, Department of Electrical Engineering and Computer Science, 1301 Beal Ave., Ann Arbor MI 48019-2122, U

Wideband characterization and simulation of advanced MOS devices for RF applications Jean-Pierre Raskin Université catholique de Louvain, Microwave Laboratory Place du Levant, 3, B-1348 Louvain-la-Neuve, Belgium Phone: +32.10.47.23.09, Email: raskin-emic.ucl.ac.be Abstract -- Multiple-gate SOI MOSFETs are potential candidates for achieving the performance expectations of the International Roadmap

CMOS devices and circuits for microwave and millimetre wave applications M. Ferndahl1, B.M. Motlagh1, A. Masud1, I. Angelov1, H. -O. Vickes3, H. Zirath1, 2 1 Chalmers University of Technology, Department of Microtechnology and Nanoscience, Microwave Electronics Lab, SE ­ 412 96 Göteborg, Sweden, +46-31-7728930, mattias.ferndahl-mc2.chalmers.se 2 3 Ericsson AB, Microwave and High Speed Electronic

Partially Depleted CMOS SOI Technology for Low Power RF Applications C. Tinella1, F. Gianesello1, 2, 3, D. Gloria1, C. Raynaud1 , P. Delatte4, A. Engelstein2, J.M. Fournier2, Ph. Benech2, J. Jomaah2 STMicroelectronics, FTM, 850 rue Jean Monnet, 38926 Crolles IMEP UMR 5130, 23 rue des martyrs- BP. 257-38016 Grenoble 3 IEMN,cité scientifique, avenue Poincarré, BP69, 59662 Villeneuve d'Ascq 4 CISSOID

High frequency low noise potentialities of down to 65nm technology nodes MOSFETs G. Dambrine1, D. Gloria2, P. Scheer2, C. Raynaud2, F. Danneville1, S. Lepilliet1, A. Siligaris1, G.Pailloncy1, B. Martineau12, E. Bouhana12, R. Valentin1 1 IEMN-CNRS, DHS, Avenue Poincaré, F-59652, Villeuneve d'Ascq, France, 33 (0)3 20 19 78 61 2 ST Microelectronics, 850, rue Jean Monnet, F-38926, Crolles, France hig

A 23-24 GHz low power frequency synthesizer in 0.25 m SiGe Olivier Mazouffre1, Hervé Lapuyade1, Jean-Baptiste Begueret1, Andreia Cathelin2, Didier Belot2, Patrick Hellmuth1 and Yann Deval1 1 IXL Laboratory, 1University of Bordeaux 1, 351 cours de la libération, 33405,Talence, France, +33 540006540 2 STMicroelectronics, Central R&D, Crolles, France The phase detector is a Gilbert cell with a curr

MEMS-IC integration for RF and millimeterwave applications D. Dubuc, W. De Raedt*, G. Carchon*, M.N. Do, E. Fourn, K. Grenier and R. Plana LAAS-CNRS, 7, Av. du Colonel Roche, 31077 Toulouse Cedex 4, France * IMEC- div. MCP-MaRS, Kapeldreef 75, B-3001 Leuven, Belgium Abstract -- This paper reports on the MEMS -IC integration for microwave and millimeterwave applications. The integration is based o

10-40GHz design in SiGe-BiCMOS and Si-CMOS ­ linking technology and circuits to maximize performance H. Veenstra1, G.A.M. Hurkx1, E. v.d. Heijden1, C.S. Vaucher1, M. Apostolidou1, D. Jeurissen1, P. Deixler2 1 Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands, ~31402743606 2 Philips Semiconductors, 2070 Route 52, P.O. Box 1279, Hopewell Junction, NY 12533, USA in

Can Silicon Catch the Millimeter Wave? John R. Long Electronics Research Laboratory/DIMES Delft University of Technology, 2628CD Delft, The Netherlands Abstract -- Transceiver designs implemented in silicon technology are most competitive in design cycle-time and performance versus cost when compared to other technologies. Scaling is driving silicon technology towards gain-bandwidths of 300GHz, en