A 0.18-µm 2.4~6GHz CMOS Broadband Differential LNA For WLAN and UWB Receiver C.-P. Chang, C.-C. Yen, and H.-R. Chuang Institute of Computer and Communication, Department of Electrical Engineering National Cheng Kung University, Tainan, Taiwan, R.O.C Tel: +886 6 2757575~62374 Fax: +886 6 2748690, E-mail: chuang_hr-ee.ncku.edu.tw, http://empc1.ee.ncku.edu.tw/ ISM U-NII UWB Abstract -- A 2.4-6 GHz

A Ultra Low-Power Highly-Linear HITD Based Down-Converter for K-band Applications I.Magrini, M.Camprini, A.Cidronali, G.Collodi, G.Manes Dept. of Electronics and Telecommunications, University of Florence, V.S. Marta, 3 I-50139 Firenze - ITALY Abstract - In this paper a single balanced mixer, suitable for K band applications, is described. The prototype is realized using an InP process and it is b

Behaviour of a TWTA with a Single or Multicarrier Input Signal for Telecommunication Applications C. LAPORTE, L. LAPIERRE, A. MALLET, A. ANAKABE Centre National d'Etudes Spatiales, 18, avenue Edouard Belin ­ 31401 Toulouse cedex 9, France e-mail: christophe.laporte-cnes.fr ­ (33) 5 61 28 13 24 / Fax:(33) 5 61 28 26 13 Abstract -- This paper deals with the evaluation of the traditional Travelling

A simple non-quasi-static non-linear model of electron devices A. Santarelli1, V. Di Giacomo1, A. Raffo2,3, P. A. Traverso1, G. Vannini2, F. Filicori1, V. A. Monaco1 1 University of Bologna, Department of Electronics, Viale Risorgimento, 2, 40136 Bologna, Italy, e-mail: asantarelli-deis.unibo.it 2 University of Ferrara, Department of Engineering , Via Saragat, 1, 44100 Ferrara, Italy 3 CoRiTeL, V

Influence of Envelope impedance termination on RF behaviour of GaN HEMT power devices B. Bunz, A. Ahmed and G. Kompa University of Kassel, Fachgebiet Hochfrequenztechnik Wilhelmshöher Allee 73, D-34121 Kassel, Germany, Tel: +49-561-804-6535, Fax: -6529 E-mail: bunz-hfm.e-technik.uni-kassel.de, http://www.uni-kassel.de/fb16/hft/bunz.html Abstract ­ The influence of envelope source and load termina

A broad-band active frequency doubler operating up to 120 GHz V. Puyal1,2, A. Konczykowska1, P. Nouet2, S. Bernard2, M. Riet1, F. Jorge1 and J. Godin1 1 Alcatel-Thales III-V Lab, Route de Nozay, 91461 Marcoussis, France 2 LIRMM, 161 Rue Ada, 34392 Montpellier, France E-mail: Vincent.Puyal-alcatel.fr in section III and measurement results up to 120 GHz in section IV. II. TECHNOLOGY The InP/InGaAs

Power Gain Analysis of SiGe HBTs with Constant Ge Strain Ningyue Jiang and Zhenqiang Ma University of Wisconsin-Madison, Department of Electrical and Computer Engineering, 1415 Engineering Drive, Madison, WI 53706, USA Phone: (608) 261-1095 mazq-engr.wisc.edu Abstract -- The power gain of SiGe HBTs with constant total Ge content (strain) but different doping profiles is studied under common-emitte

SiGe Power HBT Design Considerations for IEEE 802.11 Applications Ningyue Jiang1, Zhenqiang Ma1*, Pingxi Ma2, Vijay Reddy2 and Marco Racanelli2 University of Wisconsin-Madison, Department of Electrical and Computer Engineering, 1415 Engineering Drive, Madison, WI 53706, USA Phone: (608) 261-1095 mazq-engr.wisc.edu 2 Jazz Semiconductor, Inc., 4321 Jamboree Road, Newport Beach, CA 92660, USA Abstrac

Comparison Between Equivalent-Circuit and Black-Box Non-Linear Models for Microwave Electron Devices A. Raffo1-2, J.A. Lonac3, S. Menghi3, R. Cignani1-4 Department of Engineering, University of Ferrara, Via Saragat 1, 44100 Ferrara, Italy. e-mail: araffo-ing.unife.it , rcignani-ing.unife.it . 2 CoRiTeL, Via Anagnina 203, 00040 Morena (Rome), Italy. 3 Department of Electronics, University of Bologn

Thermal Analysis of RF-MEMS Switches for Power Handling Front-end F. Coccetti, B. Ducarouge, E. Scheid, D. Dubuc, K. Grenier, and R.Plana LAAS-CNRS, 7. Avenue du Colonel Roche, 31077 Toulouse Cedex 4, France Abstract -- An experimental setup for the characterization of electromagnetic induced heat on MEMS devices undertaking high RF power regime (> 5W) is here proposed. The technique is based on