Electromagnetic modeling and characterization of an optically-controlled microwave phase shifter in GaAs integrated technology C. Tripon-Canseliet1, S. Faci1, F. Deshours1, C. Algani1, G. Alquié1, S. Formont2, J. Chazelas2 1 2 LISIF-UPMC, MIME Group, 3 rue Galilée, 94200 Ivry sur Seine, France THALES Airborne Systems, 2 av Gay Lussac, 78 852 Elancourt , France Abstract -- A state of the art of t

Investigation of IMD Asymmetry in Microwave FETs via Volterra Series Paolo Colantonio, Franco Giannini, Ernesto Limiti, Antonio Nanni Università di Roma Tor Vergata, Electronic Engineering Department, via del Politecnico 1, 00133 Roma, ITALY, +(39) 06 72597351 II. DEVICE MODEL The proposed analysis of the IMD generation has been applied to a 1-mm (10x100µm) PHEMT power device by Alenia Marconi Sys

Optimised Thermal and Microwave Packaging for Wide-Band Gap transistors : Diamond & flip chip C.Schaffauser1, O.Vendier1, S.Forestier1, F.Michard1, D.Geffroy1, C.Drevon1, JF.Villemazet1, JL.Cazaux1, S.Delage2, JL.Roux3 1 Alcatel Space, Microwave Product Department, 26 avenue J.F. Champollion, B.P. 1187, 31037 Toulouse, Cedex 1, France, Tel : 33 (0)5 34 35 46 44, Fax : 33 (0)5 34 35 69 47, Chloe.S

A GaAs Distributed Amplifier with an Output Voltage of 8.5 Vpp for 40 Gb/s Modulators of Electron Devices and Circuits, University of Ulm, D-89069 Ulm, Germany Phone: +49 731 5031589, Fax: +49 731 5026155, e-mail: mhaefe-ebs.e-technik.uni-ulm.de United Monolithic Semiconductors (UMS) GmbH, D-89081 Ulm, Germany Abstract-- In this paper, we report on a Distributed Amplifier (DA) with positive gain

A Comprehensive Class A to B Power and Load-Pull Characterization of GaN HEMTs on SiC and Sapphire Substrates V. Camarchia1 , S. Donati Guerrieri1 , M. Pirola1 , V. Teppati1 , G. Ghione1 , M. Peroni2 , C. Lanzieri2 1 Politecnico di Torino, Dipartimento di Elettronica, Corso Duca degli Abruzzi, I-10129 Torino, ITALY Phone +39 011 2276514, vittorio.camarchia-polito.it 2 Selex, Sistemi Integrati S.p

Frequency Response Enhancement of a Single Strained Layer SiGe Phototransistor Based on Physical Simulations F. Moutier1 , J.L. Polleux1 , C. Rumelhard1 , H. Schumacher2 1 ESYCOM, Cit´ Descartes, BP 99, 93162 Noisy-le-Grand Cedex, France, +33.1.45.92.60.13, moutierf-esiee.fr e 2 Ulm University, Dept. of Electron Devices & Circuits, Germany Abstract-- An original approach based on a physical mode

A Simple Technique for Measuring the Thermal Impedance and the Thermal Resistance of HBTs. J.A.Lonac°, A.Santarelli °, I. Melczarsky °, F.Filicori ° ° Department of Electronics, University of Bologna, Viale Risorgimento 2, 40136 Bologna, Italy, e-mail: jalonac-deis.unibo.it, asantarelli-deis.unibo.it, ffilicori-deis.unibo.it. with a current source, eliminating the need for thermal derivatives in o

Thermal design of power GaN FETs in microstrip and coplanar MMICs A.Angelini, M.Furno, F.Cappelluti, F.Bonani, M.Pirola and G.Ghione Politecnico di Torino, Dipartimento di Elettronica, Corso Duca degli Abruzzi 24, 10129 Torino, Italy, +390161226405, annamaria.angelini-polito.it Abstract-- The paper presents a discussion on the thermal design of integrated power GaN devices. After a short outline o

Noise Assessment of AlGaN/GaN HEMTs on Si or SiC Substrates: Application to X-band Low Noise Amplifiers J.C. De Jaeger1, S. L. Delage2, G. Dambrine1, M.A Di Forte Poisson2, V. Hoel1, S. Lepilliet1, B. Grimbert1, E. Morvan1,Y. Mancuso3, G. Gauthier3, A. Lefrançois3, Y. Cordier4 1 TIGER/IEMN Lille University, Ave. Poincaré, F-59652, Villeneuve d'Ascq, FRANCE, (33) 3 20 19 78 34 2 3 TIGER/TRT-F, Do

A C-Band High Efficiency Second Harmonic Tuned Hybrid Power Amplifier in GaN technology P. Colantonio1, F. Giannini1, R. Giofrè1, E. Limiti1, A. Serino1 M. Peroni2, P. Romanini2, C. Proietti2 1 University of Rome "Tor Vergata", Department of Electronic Engineering, via del Politecnico n°1, 00133 Rome, Italy,+390672597346 2 Selex Sistemi Integrati s.p.a., via Tiburtina Km 12,400, 00131 Rome, Italy