A Low-Cost High Performance GaAs MMIC package using Air-Cavity Ceramic Quad Flat Non-Leaded Package up to 40 GHz Young-Ho Suh, David Richardson, Anna Dadello, Simon Mahon, and James T. Harvey Mimix Broadband Inc., 10795 Rockley Rd, Houston, TX 77099, USA E-mail: ysuh-mimixbroadband.com, Phone: 1-281-988-4600 Abstract -- A novel low-cost QFN (Quad Flat NonLeaded) package is introduced for GaAs MMIC

A Novel Closed-Form Approach for Comparing the Q-Factor Responses between the Asymmetric and Symmetric On-Chip Inductors T.S. Horng, C.H. Huang, F.Y. Han, and C.J. Li National Sun Yat-Sen University, Department of Electrical Engineering, Kaohsiung 804, Taiwan Tel: 07-5254119, e-mail: jason-ee.nsysu.edu.tw Abstract -- This paper proposes an equivalent transmission-line circuit for on-chip inductors

Novel Base Doping Profile For Improved Speed and Power E. M. Rehder1, C. Cismaru2, P. J. Zampardi2, R. E. Welser1 1 Kopin Corp. 695 Myles Standish Blvd. Taunton, MA 02780, Ph: 508-824-6696 2 Skyworks Solutions, 2427 W. Hillcrest Drive, Newbury Park, CA 91320 II. EXPERIMENTAL The HBTs were grown by MOCVD. The HBT consists of a 5000 Å subcollector doped to 4x1018cm-3, a 7000 Å collector doped to 1x

A 38-48-GHz Miniature MMIC Subharmonic Mixer Wei-Chien Chen, Shih-Yu Chen, Jeng-Han Tsai, Tian-Wei Huang, and Huei Wang Department of Electrical Engineering and Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan 106, R.O.C. Abstract -- a 38-48-GHz miniature sub-harmonically pumped mixer has been developed using GaAs 0.15- m pHEMT technology. An anti-parall

A Design of K-band Predistortion Linearizer using Reflective Schottky Diode for Satellite TWTAs Hee-Young Jeong 1, Sang-Keun Park1, Nam-Sik Ryu1, Yong-Chae Jeong1, In-Bok Yom2, Young Kim3 1 Dept. of Information & Communication Engineering, Chonbuk National University, 664-14 Duckjin-Dong Duckjin-Gu, Chonju, 561-756, Korea 2 Electronics and Telecommunication Research Institute, Teajon, Korea 3 Kum

Characterization of Low-Temperature UltrananocrystallineTM Diamond RF MEMS Resonators Sergio P. Pacheco 1 , Peter Zurcher 1 , Steven R. Young 2 , Don Weston 2 , William J. Dauksher 2 , Orlando Auciello 3 , John A. Carlisle 3 , Neil Kane 4 , and James P. Birrell 1 4 Freescale Semiconductor, Inc. - Technology Solutions Organization, Tempe, AZ, 85284 USA 2 Motorola, Inc. - Motorola Labs, Tempe, AZ,

Thermal Characterisation and Analysis of Two Tone Intermodulation Distortion in InGaP/GaAs DHBT A Khan, C N Dharmasiri, T Miura, A A Rezazadeh The Electromagnetics Centre, School of Electrical and Electronic Engineering, The University of Manchester, PO Box 88, Manchester, M60 1QD, United Kingdom Email: a.rezazadeh-manchester.ac.uk The effect of temperature (-25 to 1000C) on two-tone Intermodulat

A 2 GHz CMOS dB-Linear Programmable-Gain Amplifier with 51 dB Dynamic Range L. Wu1), U. Basaran1), R. Tao1), M. Berroth1), Z. Boos2) 1) Institute of Electrical and Optical Communication Engineering, University of Stuttgart, Germany Pfaffenwaldring 47, D-70550 Stuttgart, Germany Tel: 49 711 685-7899 Fax: 49 711 6857900 Email: wu-int.uni-stuttgart.de Web: http://www.uni-stuttgart.de.int 2) Infineon

High Efficiency 10Gb/s Optical Modulator Driver Amplifier using a Power pHEMT Technology J. Shohat1, I. D. Robertson1 and S. J. Nightingale2 Institute of Microwaves and Photonics, University of Leeds, Leeds LS2 9JT, UK. Email i.d.robertson-leeds.ac.uk Tel. +44(0)113 343 7076 Fax +44(0)113 343 7265 2 1 ERA Technology Ltd, Leatherhead, Surrey, KT22 7SA, UK. small degradation of the gain and BW but

RF Characteristics of BJT Devices with Selectively or Fully Ion-Implanted Collector C. C. Meng1, J. Y. Su1, B. C. Tsou2 and G. W. Huang3 1 National Chiao Tung University, Department of Communication Engineering, Hsin-Chu 300, Taiwan, R.O.C. 2 email:ccmeng-mail.nctu.edu.tw, Tel:886-3-5131379, Fax:886-3-5736952 National Chung-Hsing University, Department of Electrical Engineering, Taichung 400, Ta