HIGH FREQUENCY CLASS E DESIGN METHODOLOGIES P.Colantonio1, F.Giannini1, R. Giofrè1, M.A. Yarleque Medina2, D. Schreurs2, and B. Nauwelaers2 2 University of Rome Tor Vergata, Electronic Engineering Department, Via del Politecnico 1, 00133 Rome, Italy Katholieke Universiteit Leuven, Div. ESAT-Telemic, Kasteelpark Arenberg 10, B-3001 Heverlee-Leuven, Belgium 1 Abstract -- Design criteria of Class

Measuring and modelling a microwave amplifier by means of the LSNA Wendy Van Moer, Yves Rolain and Alain Barel Vrije Universiteit Brussel (Dept. ELEC/TW); Pleinlaan 2; B-1050 Brussels (Belgium) Phone: +32.2.629.28.68; Fax: +32.2.629.28.50; e-mail: Wendy.VanMoer-vub.ac.be Abstract - A measurement based model for a microwave system operating in a power range up to several dB's of compression over

Comparison of Load-Pull Measurement Results of a 4W pHEMT Involving Five European Laboratories Jonathan Lees1, Johannes Benedikt 1, Bernd Bunz2, Christophe Gaquiere3, Damien Ducatteau 3, E. Marquez-Segura4, T.M. Martin-Guerrero 4, Alain Barel5 1 Cardiff University, UK, 2 University of Kassel, 3 IEMN University of Lille , 4 University of Malaga, 5 University of Brussels E-mail: Leesj2-cardiff.ac.u

Integration Aspects of RF-MEMS Technologies T. Lisec and B. Wagner Fraunhofer Institute for Silicon Technology (ISiT), Fraunhoferstr. 1, 25524 Itzehoe, Germany Abstract - This paper presents an overview about existing fabrication and packaging solutions for RF MEMS switches with regard to an integration with other passive or active devices. Achievements and problems are discussed from a technologi

IC compatible MEMS technology K. Grenier1, L. Mazenq1, D. Dubuc1, F. Bouchriha1, F. Coccetti1, E. Ojefors2, P. Lindberg2, A. Rydberg2, J. Berntgen3, W.J. Rabe3, E. Sonmez4, P.Abele 4, H. Schumacher4, R. Plana1 (1) LAAS-CNRS, 7. Avenue du Colonel Roche, 31077 Toulouse Cedex 4, France (2) University of Uppsala, P.O. Box 528, 751 20 Uppsala, Sweden (3) Atmel Germany GmbH, Theresienstrae 2, 74072 Hei

RF-MEMS switches based on a low-complexity technology and related aspects of MMIC integration V. Ziegler1, C. Siegel1 , B. Schönlinner1 , U. Prechtel1 , H. Schumacher2 1 EADS Corporate Research Center Germany, Dept.: LG-ME, Willy-Messerschmitt-Str., 85521 Ottobrunn, Germany, email: volker.ziegler-eads.net , Tel: +49 (0)89 607 20294 2 University of Ulm, Dept.: Electron devices and circuits, Albert

Main achievements to date toward the use of RF MEMS into space satellite payloads O. Vendier, M. Paillard , H. Legay, C. Schaffauser, S. Forrestier, G. Caille, C. Drevon and J.L. Cazaux Alcatel Alenia Space (AAS), 26 Avenue Champollion, BP1187, F-31037 Toulouse, France Olivier.Vendier-space.alcatel.fr, Tel : +33 (0)5 34 35 66 35, Fax: +33 (0)5 34 35 69 47 Abstract --MEMS (Microelectromechanical S

On-state safe operating area of GaAs MESFET defined for non linear applications N. Ismail1, N. Malbert1, N. Labat1, A. Touboul1, J-L. Muraro2, F. Brasseau2, D. Langrez2 1 Laboratory IXL, University Bordeaux 1, 351 cours de la Libération, 33405 Talence CEDEX, France, Tel : 33 540 00 2859 2 Alcatel Space, Toulouse, 26 Avenue JF Champollion, 31037, France Current-voltage (I-V) measurements, monitore

Low Frequency and linear high frequency noise performances of AlGaN/GaN grown on SiC substrate J.-G. Tartarin1, G. Soubercaze-Pun1, L. Bary2, C. Chambon1, S. Gribaldo1, O. Llopis2, L. Escotte1, R. Plana1, S. Delage3, C. Gaquière4, J. Graffeuil1 1 LAAS-CNRS and Paul Sabatier University, 7 av. du Colonel Roche, 31.007 Toulouse cedex 4, France, 33 (0)561.336.456 2 LAAS-CNRS, 7 av. du Colonel Roche,

ESD Characteristics of GaAs versus Silicon Diode Changkun Park1, Seok-Oh Yun2, Jeonghu Han1, Sang-Hoon Cheon2, Jae-Woo Park2, and Songcheol Hong1 Dept.EECS , Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon, 305-701, Republic of Korea 2 Knowledge.on Inc., 513-37, Eoyang-dong, Iksan, 570-210, Republic of Korea 1 Abstract -- The ESD characteristic