Advanced Manufacturing Techniques for Next Generation power FET Technology M.C. Clausen, J. McMonagle Filtronic Compound Semiconductors. Millenium Way, Heighington Lane Business Park, Newton Aycliffe, DL5 6JW. UK: email: mike.clausen-filcs.com Phone: +44 1325 30111, Fax: + 44 1325 306600 Abstract - The development and incorporation of an evaporated airbridge technology into an established power pH

A High Purity 60 GHz-Band Single Chip X8 Multiplier with Low Phase Noise Camilla Kärnfelt, Rumen Kozhuharov, and Herbert Zirath Chalmers University of Technology, Department of Microtechnology and Nanoscience, Microwave Electronics Laboratory, Kemivägen 9, SE-412 96 Göteborg, Sweden phone +46-31-772 1738, fax +46-31-16 45 13, e-mail Camilla.Karnfelt-mc2.chalmers.se Abstract -- A single chip multi

Multistage Broadband Amplifiers Based on GaN HEMT Technology for 3G/4G Base Station Applications with Extremely High Bandwidth D. Wiegner1, T. Merk1, U. Seyfried1, W. Templ1, S. Merk1, R. Quay2, F. van Raay2, H. Walcher2, H. Massler2, M. Seelmann-Eggebert2, R. Reiner2, R. Moritz2, and R. Kiefer2 1 Alcatel SEL AG, Holderaeckerstrasse 35, 70499 Stuttgart, Germany, phone: +49 711 821 36144, fax: +49

A 100W High-Efficiency GaN HEMT Amplifier for S-Band Wireless System Arata.Maekawa, Masaki.Nagahara, Takashi.Yamamoto and Seigo.Sano EUDYNA DEVICES INC. Showa-cho Nakakoma-gun Yamanashi-ken 409-3883 JAPAN Abstract We have successfully developed a 100W AlGaN/GaN power amplifier with a bandwidth of 300MHz in S-band, operating at 50V drain bias voltage. This amplifier consists of one HEMT die develo

A 122 GHz SiGe Active Subharmonic Mixer A. M¨ ller, M. Thiel, H. Irion, and H.-O. Ruoß u Robert Bosch GmbH, Corporate Sector Research and Advance Engineering, ¨ Dept. CR/ARE, Robert-Bosch-Platz 1, 70839 Gerlingen-Schillerhohe, Germany, +49 711 811 38458, andreas.mueller12-de.bosch.com Abstract-- A 122 GHz subharmonic mixer for a radar-based sensor has been realized. It is fabricated in SiGe:C-HBT

Compact W-band SPQT MMIC Switch Using Traveling Wave Concept Shih-Fong Chao1, Zuo-Min Tsai1, Kun-You Lin1, and Huei Wang1 1 Department of Electrical Engineering and Graduate Institute of Communication Engineering, National Taiwan University, Taipei 106, Taiwan. Abstract -- A high performance W-band single-polequadruple-throw (SPQT) switch with a compact chip size using GaAs HEMT is demonstrated.

On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs I. Angelov, V. Desmaris, K. Dynefors, P.Å. Nilsson, N. Rorsman and H. Zirath Chalmers University of Technology, Department of Microtechnology and Nanoscience, MC2, SE-412 96 Gothenburg, Sweden, phone: +46 31 772 3602 Abstract -- A general purpose LS model for GaN and SiC FET devices was developed and evaluated with DC, S, and Large

Simplified Validation of Non-Linear Models for Micro- and Millimeter-Wave Electron Devices A.Raffo ^ , A.Santarelli °, P.A.Traverso °, G.Vannini ^, F.Filicori ° ° Department of Engineering, University of Ferrara, Via Saragat 1, 44100 Ferrara, Italy Department of Electronics, University of Bologna, Viale Risorgimento 2, 40136 Bologna, Italy CoRiTeL, Via Anagnina 203, 00040 Morena (Rome), Italy mod

Ka-Band AlGaN/GaN HEMT High Power and Driver Amplifier MMICs M. van Heijningen1, F.E. van Vliet1, R. Quay2, F. van Raay2, R. Kiefer2, S. Müller2, D. Krausse2, M. Seelmann-Eggebert2, M. Mikulla2, and M. Schlechtweg2 1 TNO Defence, Security and Safety, Oude Waalsdorperweg 63, 2597 AK, The Hague, The Netherlands, email: Marc.vanHeijningen-tno.nl 2 Fraunhofer Institute of Applied Solid-State Physic

Compact and Broadband Microstrip Power Amplifier MMIC with 400-mW Output Power using 0.15-µm GaAs PHEMTs A. Bessemoulin, Senior Member IEEE, S. Mahon, Senior Member IEEE, A. Dadello, G. McCulloch, and J. Harvey, Member IEEE Mimix Broadband Inc. 10795 Rockley Road, Houston, Texas 77099, USA Ph. +61 2 9956 3360 - Fax +61 2 9956 3399 email: abessemoulin-mimixbroadband.com Abstract--The performance of