Ultra High IP3 Passive GaAs FET Mixers Andreas Wentzel, Dariusz Pienkowski, Georg Boeck Technische Universitaet Berlin, Microwave Engineering Sekr. HFT5-1, Einsteinufer 25, 10587 Berlin, Germany Email: pienkows-mwt.ee.tu-berlin.de, Tel. (++49)30 314-26895, Fax (++49)30 314-26893 Abstract - This paper describes single-balanced passive GaAs FET mixers with different balancing principles for the lowe

A MEMS Capacitor with Improved RF Power Handling Capability D. Girbau1, N. Otegi2, L. Pradell1, A. Lázaro3 Universitat Politècnica de Catalunya, Signal Theory and Communications Department, 1-3 Jordi Girona St., 08034 Barcelona, Spain. Tel. +34 93 401 68 34 2 University of the Basque Country, Electricity and Electronics Department, 48080 Bilbao, Spain 3 Universitat Rovira i Virgili, Electronics, E

Generation of Third and Higher-Order Intermodulation Products in MEMS Capacitors, and their Effects David Girbau1, Nerea Otegi2, Lluís Pradell1, Antonio Lázaro3 Universitat Politècnica de Catalunya, Signal Theory and Communications Department, 1-3 Jordi Girona St., 08034 Barcelona, Spain. Tel. +34-93.401.68.34 2 University of the Basque Country, Electricity and Electronics Department, 48080 Bilbao

A GaAs Monolithic Anti-Series Varactor Pair for Voltage-Controlled Capacitance with Reduced RF Nonlinearity Qing Han1, Atsushi Shimura1, Keizo Inagaki1, Takashi Ohira1, Masami Akaike 2 1 ATR Wave Engineering Lab, 2-2-2 Hikaridai, Keihanna Science City, Kyoto 619-0288 Japan, +81 774 95 1536 2 Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 Japan Abstract -- This paper pre

A Miniature DC-to-50 GHz CMOS SPDT Distributed Switch Mei-Chao Yeh, Zuo-Min Tsai and Huei Wang Dept. of Electrical Engineering and Graduate Institute of Communication, National Taiwan University, Taipei, 106, Taiwan demonstrates the first CMOS switch operating from dc to millimeter-wave frequency with a miniature chip size of 0.5 x 0.5 mm2. II. SWITCH DESIGN Figure 1 shows the circuit schematic of

A K-Band Miniature, Broadband, High Output Power HBT MMIC Balanced Doubler with Integrated Balun Ching-Chih Weng*, Zuo-Min Tsai#, and Huei Wang*# *Department of Electrical Engineering and #Graduate Institute of Communication Engineering, National Taiwan University, Taipei, 10617, Taiwan Abstract -- A K-Band frequency doubler using InGaP HBT is developed, which features high fundamental frequency r

Detection and Mixing of Two Modulated Optical Signals Using only a Single GaAs FET (Experimental Study) L. A. Pérez-Pérez1, J. A. Reynoso-Hernández1, J. R. Loo-Yau1, G. Soberanes-Flores1, H. Ascencio-Ramírez1 and R. Rangel-Rojo2 Centro de Investigación Científica y de Educación Superior de Ensenada (CICESE) División de Física Aplicada, Km. 107 Carretera Tijuana-Ensenada, 22860 Ensenada, B.C. Méxic

S and C band Over 100W GaN HEMT 1-chip High Power Amplifiers with Cell Division Configuration Koji Yamanaka1, Kazuhiro Iyomasa1, Hiroshi Ohtsuka1, Masatoshi Nakayama1, Yoshinori Tsuyama2, Tetsuo Kunii3, Yoshitaka Kamo3, and Tadashi Takagi1 1 Mitsubishi Electric Corporation, Information Technology R&D Center, Ofuna 5-1-1, 247-8501 Kamakura, Japan, Phone : +81-467-41-2683 2 Mitsubishi Electric Cor

A Wideband Fully Integrated SiGe BiCMOS Medium Power Amplifier Hyun-Cheol Bae, Sang-Hoon Kim, Young-Joo Song, Sang-Heung Lee, Ja-Yol Lee and Jin-Young Kang SiGe Device Team, High Speed SoC Research Department, Electronics and Telecommunications Research Institute, 161, Yuseong-gu, Daejeon, South Korea 305-350 Telephone: +82-42-860-6211 Abstract -- In this paper, a wideband 3.0GHz­5.5GHz Medium Po

Improved Technique for Reflection Performances in Broadband Variable Gain Low Noise Amplifiers Munenari Kawashima, Tadao Nakagawa, Yo Yamaguchi, and Katsuhiko Araki NTT Network Innovation Laboratories, NTT Corporation, 1-1 Hikarinooka Yokosuka-Shi, Kanagawa, 239-0847, Japan, PHONE:+81-46-859-2082, FAX:+81-46-855-1497, E-MAIL: kawashima.munenari-lab.ntt.co.jp Abstract -- We propose an improved tec