InGaP/GaAs/AlGaAs Power DHBT with Enhanced Linearity near Saturation Region Tohru Oka, Koichiro Fujita, Masaharu Yamashita, John K. Twynam, and Keiichi Sakuno Devices Technology Research Laboratories, Sharp Corporation 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan TEL: +81-743-65-2485, FAX: +81-743-65-2487, E-mail: oka.tohru-sharp.co.jp Abstract -- This paper describes InGaP/GaAs/AlGaAs powe

A Dual Band (10/16 GHz) p-HEMT VCO Vikas Manan and Stephen I. Long University of California, Santa Barbara, Dept. of Electrical and Computer Engineering, Eng. Science Bldg., Room 2231F, University of California, Santa Barbara, CA 93106-9560, Phone 805-8933965, Fax 805-8933262 Abstract -- We report a 0.15 m p-HEMT dual frequency VCO. The dual frequencies are achieved using a switchedresonator topol

Single-chip Dual-band WLAN Power Amplifier using InGaP/GaAs HBT Chien-Cheng Lin1, Yu-Cheng Hsu2 Computer & Communications Research Laboratories, Industrial Technology Research Institute, 195 Sec. 4, Chung Hsing Rd., Chutung, Hsinchu 310, Taiwan R.O.C., Phone: +886-35915554, E-mail1: peter.cclin-gmail.com, E-mail2: YCH-itri.org.tw doping concentration also allows the base region to be made quite th

A Low­Noise, High-Linearity Balanced Amplifier in Enhancement-mode GaAs pHEMT Technology for Wireless Base-Stations Thomas Chong Wireless Semiconductor Division, Agilent Technologies (Malaysia) Bayan Lepas Free Industrial Zone, 11900 Bayan Lepas Penang, Malaysia Tel: 60-4-6805791 Fax: 60-4-6423732 Email: thomas-ck_chong-agilent.com Abstract -- This paper describes the design and realization of a b

Modeling, Analysis and Classification of a PA based on Identified Volterra Kernels D. Silveira, M. Gadringer, H. Arthaber, M. Mayer, and G. Magerl Institute of Electrical Measurements and Circuit Design Vienna University of Technology Gusshausstrasse 25/354, A-1040, Vienna, Austria Telephone: +43-1-58801-35423, Fax: +43-1-58801-35499 Email: daniel.silveira-tuwien.ac.at Abstract-- This article pre

Two-Stage Adaptive Power Amplifier MMIC for Handset Applications Y. S. Noh1, I. B. Yom1, C. S. Park2 1 Satellite Communications RF Technology Team, Electronics and Telecommunications Research Institute, 161 Kajeong Yuseong, Daejeon, 305-350, Korea Phone: +82-42-860-6445, Fax: +82-42-860-6949, E-mail : nohys-etri.re.kr 2 School of Engineering, Information and Communications University (ICU) 103-6

Analysis of Device Scaling towards the Performance Enhancement of Si-MOSFET RF Amplifiers Padmanava Sen, Nuttapong Srirattana, Arvind Raghavan* and Joy Laskar Georgia Electronic Design Center, School of ECE, Georgia Inst. of Technology, Atlanta, GA 30308, USA Email: psen-ece.gatech.edu *Quellan Co., Atlanta, GA 30308, USA Abstract -- This paper explains the importance of device size and dc bias co

Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology Viktor Krozer, Tom K. Johansen, Torsten Djurhuus, and Jens Vidkjær Technical University of Denmark, Oersted·DTU, Department of Electromagnetic Systems, Oersteds Plads 348, 2800 Kgs. Lyngby, Denmark, Phone:+45-45253769, E-mail:vk-oersted.dtu.dk Abstract-- We present monolithic microwave integrated circu

Accurate Temperature Dependent Noise Models of Microwave Transistors Based on Neural Networks Zlatica Marinkovi , Vera Markovi Faculty of Electronic Engineering, University of Nis, Aleksandra Medvedeva 4, 8000 Nis, Serbia and Montenegro, e-mail: zlatica-elfak.ni.ac.yu, vera-elfak.ni.ac.yu Abstract -- Recently, authors have proposed neural networks for modelling the temperature dependences of eleme

An Analog Linearizer Using Second Harmonic Signals Feedforwarding Sung Yong Kim1, Mi Ae Jang1, Ki Kyung Jeon1, Young Kim1, and Yong Chae Jeong2 1 School of Electronics Engineering, Kumoh National Institute of Technology, 1, Yangho-dong, Gumi, Gyungbuk, Korea, 2 Division of Electronic & Information Engineering, Chonbuk National University, Chonju, Korea Email : youngk-kumoh.ac.kr Abstract - In t