GaN THz Electronics Dimitris Pavlidis1 The University of Michigan, Department of Electrical Engineering and Computer Science, Ann Arbor, MI 48109, USA; Technical University of Darmstadt, Department of High Frequency Electronics, Merckstrasse 25, D-64283 Darmstadt, Germany; Institute of Electronics, Microelectronics and Nanotechnology, 59652 Villeneuve d'Ascq Cedex, France; Phone: +1-734-647-1778;

Recent Developments and Trends in GaN HFETs D. Théron1, C. Gaquière1, J.C. De Jaeger1 and S.L. Delage2 1 TIGER/I.E.M.N. UMR CNRS 8520, Avenue Poincaré, BP 69, 59652 Villeneuve d'Ascq, FRANCE, +33 320 197 979 2 TIGER/THALES Research and Technology, Domaine de Corbeville, 91404 ORSAY, FRANCE + 33 169 330 802 required to allow the emergence of a European source for this technology. For some of them,

GaN Technology Overview: Accomplishments and Challenges Paul Saunier TriQuint Semiconductor, P.O Box 833938 Richardson Texas 75083 USA, 972-994-3960 Abstract - This paper reports the (published) status of the AlGaN/GaN technology in the United States. Activities can be divided between AlGaN/GaN on SiC substrates for military applications, sponsored by DoD and AlGaN/GaN on Si for Base Stations. No

12th GAAS Symposium - Amsterdam, 2004 279 280 12th GAAS Symposium - Amsterdam, 2004 12th GAAS Symposium - Amsterdam, 2004 281 282 12th GAAS Symposium - Amsterdam, 2004 

Linearized Switching Amplifier R. Mahmoudi, D. Milosevic, J.D. van der Tang, J. A. Hegt and A. H. M. van Roermund Eindhoven University of Technology, Electrical Engineering, Mixed-signal Microelectronics Group, Den Dolech 2, Building EH 5.26, 5600 MB, Eindhoven, The Netherlands, + 31 40 247 3192 Abstract -- Two different concepts for high efficiency linear amplification of variable envelope RF sig

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A Wide Band Receiver Module Magnus Isacsson, Stefan Johansson, Johan Ståhl, Heiko Thiesies, Johan Lingsten, Audun Tengs Ericsson Microwave Systems, Antenna & Microwave Technology, SE-431 84 Mölndal, SWEDEN Abstract -- This paper presents the design and measured results of a highly integrated Multi-Chip-Module (MCM) developed for a wide band Electronic Support Measure (ESM) application. The MCM is

Evolution of Transceiver Design from Radar to Imaging D C Pennington, R Hopper, R M Reeves. Roke Manor Research, Romsey, Hampshire, SO51 OZN, www.roke.co.uk. Abstract -- Traditional transceiver design is based around designing sub-components specifically to achieve the required system performance. The approach taken in this work has been to determine whether there are transceiver designs that can

New Generation of Ka-Band Equipment for Telecommunication Satellites Jean-Louis CAZAUX, Jean-Christophe CAYROU, Christine MIQUEL, Cécile DEBARGE, Sébastien GEORGE, Régis BARBASTE, Frantz BODEREAU, Philippe CHABBERT, Jean MAYNARD ALCATEL SPACE, 26 avenue Champollion, 31037 Toulouse, FRANCE. e-mail : jean-louis.cazaux-space.alcatel.fr (30/20 GHz) or double (30/IF/20 GHz, where IF could be Ku, C or L

Galileo Receivers - Challenges and Performance Martin Hollreiser European Space Agency, Navigation Department, Keplerlaan 1, 2201 AZ Noordwijk, Netherlands, +31-71-5654284 Abstract - This paper addresses the Test User Receivers (TUR) of the Galileo Satellite Navigation System. The paper explains the concept of TURs highlighting the difference between TUR and a commercial receiver. An outline of th