Performance Analysis of Transimpedance Amplifiers in Various Technologies Zbigniew M. Nosal1 1 Warsaw University of Technology, Institute of Electronic Systems, Nowowiejska 15/19, 00-665 Warsaw, Poland, ph. (48) 22 6607663, e-mail z.nosal-ise.pw.edu.pl VDD VCC Abstract -- The paper deals with transimpedance amplifiers (TIA) for optical telecommunication systems in the 10 to 43 Gb/s speed range.

GaAs thin films grown by LPE under influence of Yb impurity Dmytro Zayachuk1, Natalia Strukhlyak1, Semen Krukovsky2, Etienne Goovaerts3, Yevhen Polyhach3 1 Semiconductor Electronics Dept, Lviv Polytechnic National University, 79013, Lviv, Ukraine, tel. 38-0322-742164 2 SRC "Carat", 79031 Lviv, Ukraine, tel 38-0322-652228 3 Physics Department, University of Antwerp, B-2610 Antwerpen, Belgium, tel.

Low temperature MBE grown GaAs for terahertz radiation applications A. Krotkus1, K. Bertulis1, and R. Adomavi ius1 1 Semiconductor Physics Institute, 2600, A. Gostauto 11, Vilnius, Lithuania, phone 370 5 2616821 material, and optimisation of these parameters for the applications in THz radiation emitters and detectors. We will also describe the technology and characteristics of such devices. II.C

InGaAs p-i-n Photodiodes for Microwave Applications Sergei Malyshev, Alexander Chizh, and Vatslav Andrievski Institute of Electronics of National Academy of Sciences of Belarus, Laboratory of Semiconductor Optoelectronics, 22 Logoiski trakt, 220090 Minsk, Belarus, phone: +375-17-2812213, e-mails: malyshev-ieee.org, chizh-ieee.org Abstract -- The experimental and theoretical study of the surface-il

Linearisation Issues in Microwave Amplifiers M. S. O'Droma1, J. Portilla2, E. Bertran3, S. Donati4, T. J. Brazil5, M. Rupp6, R. Quay7 1 UL, Limerick, Ireland, (mairtin.odroma-ul.ie); 2UPV/EHU, Bilbao, Spain; 3UPC, Barcelona, Spain; 4Politecnico di Torino, Italy; 5UCD, Dublin, Ireland; 6Technische Universitat Wien, Austria; 7FhG-IAF, Freiburg, Germany The standard static memoryless or quasi-memory

High Linearity and Efficiency Microwave PAs Paolo Colantonio1, Josè Angel Garcia2, Franco Giannini1, Ernesto Limiti1, Emigdio Malaver2, Josè Carlos Pedro3 1 2 University of Roma Tor Vergata, Electronic Engineering Department, Via del Politecnico 1, 00133 Roma, ITALY Department of Communication Engineering, E.T.S.I. de TELECOMUNICACION, University of Cantabria, Spain 3 Instituto de Telecomunicaçõe

Nonlinear Models of Microwave Power Devices and Circuits Ahmed Alabadelah1, Tomás Fernandez2, Angel Mediavilla2, Bart Nauwelaers1, Alberto Santarelli3, Dominique Schreurs1, Antonio Tazón2 and Pier Andrea Traverso3 K.U.Leuven, ESAT-TELEMIC, 3001 Heverlee, Belgium, +32-16-321063 University of Cantabria, DICOM, 39005 Santander, Spain, +34-942-201490 3 University of Bologna, DEIS-UNIBO, 40136 Bologna,

Large Signal Characterization of Microwave Power Devices Jean-Pierre Teyssier1, Denis Barataud1, Christophe Charbonniaud1, Fabien De Groote1, Markus Mayer2, Jean-Michel Nébus1, Raymond Quéré1 1 University of Limoges, IRCOM, 127 av Albert Thomas, 87000 Limoges, France 2 Technical University of Vienna, Karlsplatz 13, 1040 Wien, Austria ABSTRACT -- This paper presents an overview of nonlinear measu

Frontiers of III-V Compounds and Devices Joachim Würfl1 and Michael Schlechtweg2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany, Tel: +49 30 6392 2690 2 Fraunhofer-Institut für Angewandte Festköperphysik, Tullastraße 72, 79108 Freiburg, Germany, Tel: +49 761 5159 734 ABSTRACT -- The paper presents an overview on the European status of electroni

Low Noise and Low Power Consumption Cryogenic Amplifiers for Onsala and Apex Telescopes Christophe Risacher, Erik Sundin, Victor Perez Robles, Miroslav Pantaleev, Victor Belitsky Onsala Space Observatory with Chalmers University of Technology, 41296 Gothenburg, Sweden Abstract -- As part of Onsala Space Observatory instrumentation activities, several low noise, low power consumption cryogenic amp