GAAS: Robust GaN HEMT Low-Noise Amplifier MMICs for X-Band Applications
D. Krausse, R. Quay, R. Kiefer, A. Tessmann, H. Massler, A. Leuther, T. Merkle, Stefan Muller, C. Schworer, M. Mikulla, Michael Schlechtweg, G. Weimann
Robust GaN HEMT Low-Noise Amplifier MMICs for X-Band Applications
D. Krausse, R. Quay, R. Kiefer, A. Tessmann, H. Massler, A. Leuther, T. Merkle, S. M¨ ller, u C. Schw¨ rer, M. Mikulla, M. Schlechtweg, and G. Weimann o
Fraunhofer Institute of Applied Solid-State Physics, Tullastr. 72, D-79108 Freiburg, Germany, phone: ++49-761-5159-843, fax:++49-761-5159-565, email: ruediger.quay-iaf.fraunhofer.de