A Class-E GSM-Handset PA with Increased Efficiency R. Koller1 , A. Stelzer1 , K.-H. Abt2 , A. Springer1 , R. Weigel3 1 Johannes Kepler University of Linz, Institute for Communications and Information Engineering, Altenbergerstr. 69, 4040 Linz, Austria 2 TriQuint Semiconductor, Inc., Konrad-Zuse-Platz 1, 81829 Munich, Germany 3 Friedrich-Alexander University of Erlangen-Nuremberg, Institute for Te

A Power Amplifier Module with Fully Embedded Passive components in a LTCC Substrate for K-PCS Band Mobile Phone Erick Kim, Young-Shin Lee, Chan-Sei Y oo, Woo-Seong Lee, and Jong-Cheol Park High Frequency Materials Research Center, Korea Electronics Technology Institute #455-6 Masan-Ri, JinWi-Myon, Py ungTaek-Si, KyungGi-Do 451-865, Korea Tel : +82-31-6104-151, Fax : +82-31-6104-126, E-mail : kckim

A Design of Predistortion Linearizer using 2nd Order Low Frequency Intermodulation Signal Injection Young-Pil Kwon, Yong-Chae Jeong, Young Kim, Chul-Dong Kim* Dept. of Information & Communication Engineering Chonbuk National University, 664-14 Duckjin-Dong Duckjin-Gu, Chonju, 561-756, Korea, 82-63-270-2458 Electronics Engineering, Kumoh National University of Technology School, Korea *Sewon Telete

Analogue Adaptive Feedback Lineariser Eduard Bertran and Jordi Berenguer Universitat Politecnica de Catalunya, UPC. Department of Signal Theory and Communications C/ Jordi Girona, 1-3. Modul D-4. 08034 - Barcelona. Spain phone: +34934017074, fax: + 34 934017200, email: bertran-tsc.upc.es Abstract A solid-state power amplifier (SSP A) linearisation technique based on the analogue implementation of

Time-Domain Pulsed Large-Signal Non-Linear Characterization Of Microwave Transistors C. Charbonniaud, JP. Teyssier, R. Quéré IRCOM, CNRS UMR 6615, University of Limoges, 19100 Brive, France Abstract -- Breaking-up the limitations of VNAs for RF non-linear measurements, the LSNA allows time domain characterizations of full two-port active devices. We demonstrate here some capabilities of the LSNA

An Inversely Tapered Corrugated CPW S. J. Kim and N. H. Myung Division of Electrical Engineering, Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, 373-1, Guseong-dong, Yuseong-gu, Daejeon, 305-701, Republic of Korea Phone: +82-42-869-3443, Fax: +82-42-869-3410 E-mail: nhmyung-ee.kaist.ac.kr, ice-eeinfo.kaist.ac.kr Abstract -- A novel ph

Novel Two-Tone Intermodulation Phase Measurement for Evaluating Amplifier Memory Effects Joel Dunsmore*, David Goldberg** joel_dunsmore-agilent.com *Agilent Technologies, 1400 Fountaingrove Pkwy, Santa Rosa, California, 95403, USA. ** The Boeing Company - Integrated Defense Systems, P.O. Box 92919, MC W-S10-S371, Los Angeles, CA 90009 Abstract -- The amplitude and phase response of the two-tone in

An Enhanced PIN Diode Model for Voltage-Controlled PIN Diode Attenuator Byung-Jun Jang, In-Bok Yom and Seong-Pal Lee Electronics Telecommunications Research Institute, Satellite Comm. System Dept., Daejon, 305-600, Korea, +82-42-860-6165 Abstract -- This paper presents an enhanced PIN diode model for the voltage-controlled PIN diode attenuator. The proposed model operates well when it is used in

Miniaturized Differential Filters For C- and Ku-Band Applications Kamran Entesari, Tauno Vaha-Heikkila and Gabriel M. Rebeiz Department of Electrical Eng. And Computer Science, University of Michigan Ann Arbor, MI 48109-2122, USA Tel: 734-936-0183, Fax: 734-647-2106 kentesar-umich.edu, rebeiz-umich.edu Abstract - We have developed a new set of differential filters suitable for C and Ku-Band applic

A Sallen and Key Active Filter Using SiGe BiCMOS Technology Farid Temcamani1, Hilda Diab1, Myrianne Régis2 and Jean-Luc Gautier1 1 ENSEA-ECIME, 95014 Cergy-Pontoise Cedex, France, Phone: (0033). 1.30.73.62.72 2 SIGE SEMICONDUCTOR, 2680 Queensview Drive, Ottawa ON K2B 8J9, Canada (M. Régis is now with ACCO-IC, Saint-Germain-En-Laye, France) Abstract In this paper, a 1.3 GHz Sallen and Key band pa