Feedback Amplifier based on an Embedded HEMT in Thin-film Multilayer MCM-D Technology Raf Vandersmissen1, Dominique Schreurs2, Geert Carchon1, and Gustaaf Borghs1 1 IMEC, MCP, Kapeldreef 75, B-3001 Leuven, BELGIUM, +32-16-288056, raf.vandersmissen-imec.be 2 K.U.Leuven, ESAT/TELEMIC, Kasteelpark Arenberg 10, B-3001 Leuven, BELGIUM Abstract -- In this paper a feedback amplifier circuit integrated

Wafer Level Integration of a 24 GHz Differential SiGe-MMIC Oscillator with a Patch Antenna using BCB as a Dielectric Layer ¨ P. Abele1 , E. Ojefors2 , K.-B. Schad1 , E. S¨ nmez1 , A. Trasser1 , J. Konle3 , and H. Schumacher1 o Dept. of Electron Devices and Circuits, University of Ulm Albert-Einstein-Allee 45, D-89081 Ulm, Germany email: pabele-ebs.e-technik.uni-ulm.de Phone: +49 731 5031593 Fax: +

A Chip-Scale Packaged Amplifier MMIC using Broadband Hot-Via Transitions A. Bessemoulin1, Member, IEEE, C. Gaessler2, P. Marschall3, P. Quentin1 1 United Monolithic Semiconductors S.A.S, Route Départementale 128 ­ BP46, F-91401 Orsay Cedex, France 2 United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, D-89081 Ulm, Germany 3 Daimler Chrysler REM/CF, Wilhelm-Runge-Strasse 11, D-89081 Ul

An 1 GHz Class E LDMOS Power Amplifier Andreas Ådahl, Herbert Zirath Microwave Electronics Laboratory, Chalmers University of Technology, Sweden Phone: +46-(0)-31-772 50 48, Fax: +46-(0)-31-16 45 13 E-mail: adahl-ep.chalmers.se Abstract--A class E power amplifier working at 1 GHz and with an LDMOS transistor as switching element has been developed. The circuit is implemented with lumped and distr

A Simple Technique for Improving the IM3/C and PAE Performance of MESFET Amplifiers J N H Wong and C S Aitchison Microwave Systems Research Group, Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH, UK Abstract -- This paper shows by simulation that a shunt short -circuited /4 line placed across the drain terminals of a microwave MESFET amplifier significantly improves

Biasing Circuits for Voltage Controlled GSM Power Amplifiers André van Bezooijen1 , Dima Prikhodko1 and A.H.M. van Roermund2 2 Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands Eindhoven University of Technology, Den Dolech 2, 5600 MB Eindhoven, The Netherlands 1 Abstract -- In GSM phones voltage controlled power amplifiers are used to vary the output power. Inaccuracies in

10 W High Efficiency 14V HBT Power Amplifier for Space Applications N. LE GALLOU* , J.F.VILLEMAZET* ,B. COGO*, J.L CAZAUX*, A. MALLET**, L. LAPIERRE ** * ALCATEL SPACE, 26 Av. JF Champollion, 31037 Toulouse cedex, FRANCE ** CNES (French Space Agency), 18 Av. E. Belin 31401 Toulouse cedex 4, France e-mail : Nicolas.Le-Gallou-space.alcatel.fr / Fax : +33 5 3435 6947 http://www.alcatel.com/space Abst

Mobile Phone Power Amplifier Linearity and Efficiency Enhancement Using Digital Predistortion N. Ceylan1, J.E. Mueller1, T. Pittorino1, R. Weigel2 1 Infineon Technologies, Secure Mobile Solutions, Kastenbauerstr. 2, 81677 Munich, Germany, Phone:+498923420839 2 University of Erlangen, Department of Technical Electronics, Cauerstr. 9, 91058 Erlangen, Germany, Phone:+4991318527195 this purpose AM-AM

A Novel Optically-Controlled Microwave Switch On Semiconductor Substrates For an ON/OFF Ratio Enhancement C.Canseliet 1, C.Algani 1, F.Deshours 1, G.Alquie 1, S.Formont 2, J.Chazelas 2 LISIF-4 place Jussieu-BP 252-75252 Paris Cedex 05-France Tel: +33 1 44 27 74 59 ­ Fax: +33 1 44 27 46 62 E-mail :charlotte.canseliet-lis.jussieu.fr 2 Thales Airborne Systems-2, avenue Gay Lussac CN-675-78852 Elancou

A NEW NUMERICAL APPROACH IN THE LINEAR ANALYSIS OF RF AMPLIFIERS Adriano de Andrade Mello(), Henry Douglas Rodrigues(), José de Souza Lima() Marcos Paulo de Souza Silva(*), Maurício Silveira(*) * National Institute of Telecommunication ­ INATEL João de Camargo Avenue 510, Phone: +55 35 3471-9332 P.O. Box: 05, Web Page: http://www.inatel.br 37540-000, Santa Rita do Sapucaí, MG, Brazil () Linea