Refined Wide Band Modelling and Design of CMOS-Compatible Spiral Inductors with BCB Dielectric Layer Yuri Tikhov, Dongha Shim, Kuang Woo Nam, and Insang Song Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea phone: +82-31-280-9469, fax: +82-31-280-9473, e-mail: tikhov-sait.samsung.co.kr Abstract - This paper discloses a new measurement-based model of on-chip spiral indu

The Effect of Low-K Dielectrics on RFIC Inductors Jong-Hyeok Jeon1, Emigdio J. Inigo2, Michael T. Reiha2, Tae-Young Choi2, Yongshik Lee2 Saeed Mohammadi1 and Linda P.B. Katehi1 1 School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, U.S.A., Phone: +1-765-494-3480 2 Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor,

Coplanar Passive Circuits on Surface Micromachined Silicon and Thick Polymer Layers for Millimeter-wave Applications Fouad Bouchriha(1), Katia Grenier(1), David Dubuc(1,2), Patrick Pons(1), Robert Plana(1,2) and Jacques Graffeuil(1,2) (1) LAAS-CNRS, 7. Avenue du Colonel Roche, 31077 Toulouse Cedex 4, France (2) P. Sabatier University, 118 Route de Narbonne, 31062 Toulouse Cedex 4, France Phone : +

Propagation Characteristics of Finite Ground Coplanar Waveguide on Si Substrates With Porous Si and Polyimide Interface Layers George E. Ponchak1, Isaac K. Itotia2, and Rhonda Franklin Drayton2 1. 2. NASA Glenn Research Center, 21000 Brookpark Rd., MS 54/5, Cleveland, OH 44135. Tel: 216-433-3504, FAX: 216-433-8705, george.ponchak-ieee.org Department of Electrical and Computer Engineering, Universi

A Hollow-GCPW (HGCPW) as Low-Loss and Wafer-Conductivity-Free Structure on a Single Silicon Wafer Tall10tsu Nishino Kenichi I, Yukihisa Yoshida I, Tatsuya 2, Yoshiyuki Suehiro2, Sang-Seok Lee2, Oh-hashi I, Osall1i Ishida 1 Miyaguchi Fukall1i2, Hideyuki 'MitslIbishi Electric Co. Information Technolo!..!y R&D Center 2 Mitsllbishi Electric Co. Advanced Technology R&D Center Tel: +81-467-41-2686

Reliability Overview of RF MEMS Devices and Circuits S.Melle , F.Flourens , D.Dubuc , K.Grenier , P.Pons , F.Pressecq , J.Kuchenbecker , 3 1 1 J.L.Muraro , L.Bary and R.Plana 2 1 1 1 1 1 2 2 LAAS-CNRS 7 avenue du Colonel Roche, 31077 Toulouse, France CNES Toulouse, 18 avenue Edouard Belin 31077 Toulouse, France 3 Alcatel Space Industries, 26 Av J.F Champollion, Toulouse, France A 1 3 - #

GaAs MEMS for Millimeter Wave Communications Alexandru Muller1, George Konstantinidis2, Dan Neculoiu1 and Robert Plana3 IMT Bucharest, 32B, Erou Iancu Nicolae Street, 72996, Bucharest, Romania, Phone: +40.21.4908581 2 FORTH-IESL-MRG, PO Box 1527, Heraklion, Greece, Phone: +30.2810.394103 3 LAAS-CNRS Toulouse, 7, Av Colonel Roche, 31077 Toulouse, Cedex 4, France, Phone: +33.5.61336371 Abstract -- T

Effects of a loop array layer on a micro-inductor for future RF MEMS Components Charles-Marie Tassetti, Gaëlle Lissorgues, *Jean-Paul Gilles Groupe ESIEE, Cité Descartes, 93162 Noisy-le-Grand, France Tel : +33 (0) 1 45 92 66 96, Email : tassettc-esiee.fr , g.lissorgues-esiee.fr *IEF, Université Paris Sud, 91405 Orsay, France Tel : +33 (0) 1 69 15 65 85, Email : jean-paul.gilles-ief.u-psud.fr Abst

Finite Ground Coplanar Lines on CMOS Grade Silicon with a Thick Embedded Silicon Oxide Layer Using Micromachining Techniques Guoan Wang, Andrew Bacon, Reza Abdolvand, Farrokh Ayazi, John Papapolymerou, and Emmanouil M. Tentzeris School of Electrical and Computer Engineering Georgia Institute of Technology, Atlanta, GA 30332-0250, USA Abstract--Finite Ground Coplanar (FGC) waveguide transmission li

High-Performance Integrated RF-MEMS: Part 1- The Process Arthur S. Morris, III, Shawn Cunningham, Dana Dereus, Gerold Schröpfer wiSpry Inc., 4001 Weston Parkway, Suite 200, Cary, NC 27513 wiSpry Inc., 7150 Campus Drive, Suite 255, Colorado Springs, CO 80920 Coventor, Inc., 3 avenue du Quebec, ZI de Courtaboeuf, 91140 Villebon sur Yvette, France Abstract -- RF MEMS have been pursued for more tha