Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Diodes on n-GaN C. S. Lee, E. Y. Chang, D. Biswas, Li Chang, J. S. Huang* * Department of Materials Science and Engineering, and Microelectronics and Information System Research Center, National Chiao Tung University, 1001 Ta Hsueh Road , Hsinchu 300, Taiwan, R.O.C. e-mail: icant-cc.nctu.edu.tw Tel:886-3-5712121 ext 55332 Fax:886-3-

A Universal Test Set for DC and Pulsed I-V Characterization of Various Semiconductor Devices J.J.M. Kwaspen Eindhoven University of Technology, Faculty of Electrical Engineering, Opto-Electronic Devices Group; COBRA Inter-university Research Institute PO Box 513, 5600 MB Eindhoven, The Netherlands Phone +31 (0)40 247 5112 ; e-mail: j.j.m.kwaspen-tue.nl; Fax +31 (0)40 244 8375 ABSTRACT A universal

Advantages of the New Generation Quasi-Monolithic Integration Technology (QMIT) M. Joodaki, G. Kompa, H. Hillmer* and R. Kassing** Dept. of High Frequency Engineering, Kassel University, Wilhelmshöher Allee 73, 34121 Kassel, Germany * Dept. of Technological Electronics, Kassel University, Heinrich-Plett Str. 40 (IMA), 34132 Kassel, Germany ** Dept. of Technological Physics, Kassel University, Hein

Design of Photonic Band-Gap Devices Using the Leaky Mode Propagation Method Agostino Giorgio, Anna Gina Perri Dipartimento di Elettrotecnica ed Elettronica, Politecnico di Bari, Laboratorio di Dispositivi Elettronici, Via E. Orabona 4, 70125, Bari, Italy Phone: +39 - 80 - 5963314/5963427 Fax: +39 - 80- 5963410 E-mail: perri-poliba.it Abstract: The design of some 1-D waveguiding photonic bandgap (

Negative Uniaxial Optical Behaviour of Laminated Polarization Beam-splitters. A. Massaro*, A. Di Donato**, T. Rozzi Department of Electronics and Automatics, University of Ancona, Via Brecce Bianche, 60131 Ancona, e-mail: MassaroAle-libero.it*, a.didonato-ee.unian.it** In the construction of polarization beam-splitters (PBS) and switches a structure can be employed, that is based on the birefringe

A Simplified Non-Linear Physical Model for High Frequency FET's Emer Condon and Thomas J. Brazil Department of Electronic and Electrical Engineering, University College Dublin, Dublin 4, Ireland tom.brazil-ucd.ie Direct numerical solution of device transport equations for a transistor, and device modelling approaches based on an equivalent circuit representation, are often seen as essentially comp

Performance evaluation of submicron channel GaN vertical transistors V.Camarchia,1,2 E. Bellotti,1 M. Goano,2 S. Kim,1 G. Ghione2 1 2 Boston University, 8 Saint Mary's Street, 02215 Boston, MA, bellotti-bu.edu Dipartimento di Elettronica and INFM, Politecnico di Torino, Torino, Italy, goano-polito.it An electrical and thermal study of submicron GaN permeable base transistors is presented. Carri

Applying Digital Predistortion To Power Amplifiers Used in Third Generation Systems B. Abdulrahman, G.Baudoin ESIEE, Signal Processing and Telecommunications Department, BP-99, 93162, Noisy-Le-Grand CEDEX, FRANCE, Tel:+33-1.45.92.66.46 E. mail : abdulrab-esiee.fr , baudoing-esiee.fr Efficient RF power amplifiers used in third generation systems ( like wide-band WCDMA systems ) require linearizati

A Distributed Approach for the Characterisation of Parasitic Networks in Electron Device Modelling A.Cidronali, G.Collodi, C.Toccafondi, R.Cignani*, A.Santarelli **, G.Vannini *, F.Filicori** Dept. Electronics and Telecommunications, University of Florence, V. S. Marta 3, Firenze, Italy 50139, Phone +390554796766, Fax +390554494569, e-mail acidronali-ing.unifi.it * Department of Engineering, Unive

Ignoring the Obvious: Possibilities for On-chip Linearisation of RFIC Power Amplifiers Steve C. Cripps Hywave Associates, Somerset, UK, steve.cripps-Btinternet.com Possibilities for on-chip linearisation of RFIC PAs are reviewed. The issues are not just technical, but include some important paradigm shifts which the RFIC user community must traverse. INTRODUCTION The requirements of multi-carrier