Modeling and Investigation of Instabilities in Heterojunction Interband Tunnel FET for Microwave Applications A. Cidronali, M. Camprini, G. Collodi, V. Nair*,G. Manes, J. Lewis*, H. Goronkin* Dept. Electronics and Telecommunications, University of Florence, V. S. Marta 3, Firenze, Italy 50139, Phone +390554796766, Fax +39055494569, e-mail acidronali-ing.unifi.it *PSRL, Motorola Labs., 7700 S. Rive

Dynamic, self consistent electro-thermal simulation of power microwave devices including the effect of surface metallizations F. Cappelluti, F. Bonani, S. Donati Guerrieri, G. Ghione, C.U. Naldi, M. Pirola Dipartimento di Elettronica, Politecnico di Torino, Torino, Italy, fcappell-athena.polito.it We present an efficient simulation technique to account for the thermal spreading effects of surface

Dual Transimpedance Amplifier for 43 Gbps applications M. van Wanum, M.W. van der Graaf, J.A.H. Hoogland, M. van Heijningen TNO Physics and Electronics Laboratory P.O. Box 96864 2509 JG The Hague The Netherlands E- mail: vanWanum-fel.tno.nl Phone: +31 (0)70 3740497 Fax: +31 (0)70 3740654 A 3-stage dual TransImpedance Amplifier (TIA) on one 2x1.8 mm 2 GaAs chip with 0.2 µm pHEMT technology has been

7 VPP Modulator-Driver for 40 Gbit/s Optical Communications S. Hoffmann, J. R. Ojha, A. Thiede, R. Leblanc*, B. Wroblewski* Dept. of High-Frequency Electronics, University of Paderborn, Warburger Str. 100, 33098 Paderborn, Germany hoffmann-ont.upb.de * OMMIC, 22 Avenue Descartes B.P.11, 94453 Limeil-Brevannes Cedex, France r.leblanc-ommic.com The high frequency, high power performance of a modulat

A High Gain-Bandwidth Product Distributed Transimpedance Amplifier IC for High-Speed Optical Transmission Using Low-Cost GaAs Technology. F.Giannini, E.Limiti, G.Orengo, A.Serino, M.De Dominicis Department of Electronic Engineering, University of Rome "Tor Vergata", Via del Politecnico 1, 00133, Roma, Italy Phone : +39 06 72597342, Fax: +39 06 72597343, E-mail: serino-uniroma2.it This paper repor

A novel finite-difference time-domain approach to the self-consistent simulation of high-speed TW-EAMs F. Cappelluti, F. Bertazzi, G. Ghione Dipartimento di Elettronica, Politecnico di Torino, Torino, Italy, fcappell-athena.polito.it We present a novel self-consistent time-domain model for the analysis and design of traveling-wave electroabsorption modulators (TW-EAMs). The model fully accounts fo

Design of a Broadband Amplifier for High Speed Applications E. Camargo, R. S. Virk, R. Hajji, S. Parker, and H. Ohnishi* Fujitsu Compound Semiconductor, Inc. 2355 Zanker Road San Jose, CA 95131, USA e-mail: ecamargo-fcsi.fujitsu.com * Fujitsu Quantum Devices Limited Nakakoma-gun, Yamanashi-ken 409-3883 Japan This paper provides comprehensive insight into the design approach followed for an ampli

Investigation of He +-ion bombardment in the fabrication of planar InP/ InGaAs HBT structure S. C. Subramaniam, A. A. Rezazadeh Dept. of Electronic Engineering, King's College London, London, WC2R 2LS, UK e-mail: suba.subramaniam-kcl.ac.uk ABSTRACT We have investigated He+-ion bombardment on lattice-matched multi-layer InP/ In0.53Ga0.47As and In0.5 Ga0.5 P/ GaAs heterojunction bipolar transistor (

Reactive Ion Etching of InP using Hydrocarbons John Rajeev Ojha, Sören Irmer, Jürgen Daleiden, Heike Hohmann, Hartmut Hillmer Dept. of Technical Electronics, University of Kassel, Heinrich-Plett-Str.40 (IMA), 34132 Kassel, Germany Email: johnojha-hotmail.com / ojha-hrz.upb.de Phone: +49 (0)5251 60 2204 Fax: +49 (0)5251 60 4226 Abstract: This paper deals with the development of an etch recipe for

Analysis of Correlation between Breakdown Characteristics and Gate-Lag Phenomena in Narrowly-Recessed-Gate GaAs MESFETs Y. Mitani, D. Kasai and K. Horio Faculty of Systems Engineering, Shibaura Institute of Technology 307 Fukasaku, Saitama 330-8570, Japan, horio-sic.shibaura- it.ac.jp Effects of surface states on breakdown and gate-lag phenomena in narrowly-recessed-gate GaAs MESFETs are studied b