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A Converter MMIC with Integrated LO Amplifier and Doubler Thomas A. Bös, Tomio Satoh*, Kiyoshi Kajii*, Edmar Camargo, Yuichi Hasegawa* Fujitsu Compound Semiconductor, Inc. 2355 Zanker Road, San Jose, CA 95131, USA * Fujitsu Quantum Devices Limited, Hachioji, Japan Abstract -- A highly linear converter MMIC with integrated LO amplifier and doubler is presented. Operating from a single 5V supply, t

Coplanar High Performance MMICs in MHEMT and PHEMT Technology for Applications up to 100 GHz C. Schwörer, A. Tessmann, M. Leich, A. Leuther, S. Kudszus*, A. Bessemoulin**, M. Schlechtweg Fraunhofer-Institute for Applied Solid State Physics Tullastrasse 72, D-79108, Germany Christoph.Schwoerer-iaf.fraunhofer.de *now with BigBear Networks, 1591 McCathy Blvd, Milpitas, CA 95035 **now with United Mono

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Low Power Single-Ended Active Frequency Doubler for a 60 GHz-Band Application Toru Masuda, Lars Landén*, Herbert Zirath*^ Hitachi, Central Research Laboratory, Tokyo, 185-8601, Japan. Toru-crl.Masuda-c-net3.crl.hitachi.co.jp *Chalmers University of Technology, Department of Microelectronics, Göteborg, SE-412 96, Sweden landen-ep.chalmers.se and zirath-ep.chalmers.se ^Ericsson Microwave Systems, Mö

HEMT's Design for Applications beyond 100GHz S. Bollaert, T. Parenty, X. Wallart, H. Happy, G. Dambrine, A. Cappy Institut d'Electronique, de Microelectronique et de Nanotechnologies UMR CNRS 8520 Département Hyperfréquences & Semiconducteurs Cité Scientifique, Avenue Poincaré, BP 69 59652 Villeneuve d'Ascq Cedex France sylvain.bollaert-iemn.univ-lille1.fr I. Introduction Electronics up to 100 GH

Q-Band Monolithic GaAs PHEMT Low Noise Amplifiers: Comparative Study of Depletion and Enhancement Mode Transistors B. Aja, L. de la Fuente, J.P. Pascual, M. Cryan*, E. Artal Dpto. Ing. de Comunicaciones. ETSII y de Telecomunicación. University of Cantabria Avda. Los Castros s/n 39005 Santander. Spain, beatriz-dicom.unican.es * Department of Electronic and Electrical Engineering. Queen's Building.U

High Power Performances of AlGaN/GaN HEMTs On Sapphire Substrate At F=4GHz N. Vellas, C. Gaquiere, Y. Guhel, M. Werquin, D. Ducatteau, B. Boudart 1 , J. C. de Jaeger Institut d'Electronique et de Microélectronique du Nord ­ U.M.R. ­ C.N.R.S. 8520 Département Hyperfréquences et Semiconducteurs Cité Scientifique ­ Avenue Poincaré ­ B.P. 69 ­ 59652 Villeneuve d'Ascq Cedex ­ France 1 Now in : EIC-LUS

Gallium Nitride on Silicon HEMTs for Wireless Infrastructure Applications, Thermal Design and Performance S. Singhal, J.D. Brown, R. Borges, E. Piner, W. Nagy, A. Vescan Nitronex Corporation, Raleigh, NC 27606, ssinghal-nitronex.com GaN HEMTs are being touted as the next generation microwave power transistor. Many research groups have reported outstanding DC and RF results on small periphery devic

Floating-Body Effects in AlGaN/GaN Power HFETs S. Nuttinck, S. Pinel, E. Gebara*, J. Laskar, M. Harris**, and J.R. Shealy*** Georgia Institute of Technology, School of Electrical Engineering, 791 Atlantic Drive Atlanta, GA, sn46-prism.gatech.edu * ** Quellan Inc., 250 14th street, Atlanta, GA GeorgiaTech Research Institute, Electro-Optics, Environment, and Materials Lab., Atlanta, GA *** Cornel