Improvements of Thermal Resistance and Thermal Stress in Quasi-Monolithic Integration Technology (QMIT) with a New Fabrication Process M. Joodaki, A. Tarraf*, M. Salih, D. Albert**, H. Schröter-Hohmann*, W. Scholz**, G. Kompa, H. Hillmer* and R. Kassing** Dept. of High Frequency Engineering, Kassel University, Wilhelmshöher Allee 73, 34121 Kassel, Germany * Dept. of Technological Electronics, Kass

Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz Ardouin M., Bonte B., Zaknoune M., Théron D., Cordier Y*., Bollaert S, De Jaeger J.C. IEMN-UMR CNRS 8520; Université des Sciences et Technologies de Lille Avenue Poincaré, BP 69 - 59652 Villeneuve d'Ascq Cédex France Tel +33 3 20 19 78 28 Fax +33 3 20 19 78 88 bonte-iemn.univ- lille1.fr *CRHEA

EM Analysis of Inhomogeneous Layers Stack from the Wave Concept. Reduction of Substrate Couplings in BiCMOS Technology. S. Wane*, D. Bajon**, H. Baudrand* and P. Gamand*** *ENSEEIHT 2 rue Camichel 31071 Toulouse-France wane-len7.enseeiht.fr , **SUPAERO 10 av. Ed. Belin, 31055 Toulouse-France ***Philips Semiconductors 2 rue de la girafe - 14079 Caen - France Abstract -- This paper presents a new or

A New Empirical Non-linear Model for SOI MOSFET Alexandre Siligaris, Matthieu Vanmackelberg, Gilles Dambrine, Nicolas Vellas, François Danneville IEMN, UMR CNRS 8520, Avenue Poincaré, BP 69, 59652 Villeneuve d'ASCQ, France Phone number: 33 (0)3 20 19 78 61, Fax number: 33 (0)3 20 19 78 92, alexandre.siligaris-iemn.univ- lille1.fr Abstract ­ An empirical non-linear model for SOI MOSFET useful for l

ANN Model For SiGe HBTs Constructed From Time-Domain Large-Signal Measurements D. Schreurs, S. Vandenberghe, H. Taher, and B. Nauwelaers K.U.Leuven, Div. ESAT-TELEMIC, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium e-mail: Dominique.Schreurs-esat.kuleuven.ac.be We construct a large-signal artificial neural network (ANN) model for SiGe HBTs, directly from time-domain large-signal measurements. It

Development and Verification of a Non-Linear Look-Up Table Model for RF Silicon BJTs M. Myslinski*+, D. Schreurs*, and W. Wiatr+ *K.U.Leuven, Div. ESAT-TELEMIC, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium E-mail: Maciej.Myslinski-esat.kuleuven.ac.be + Warsaw University of Technology, Inst. of Electronics Systems, Nowowiejska 15/19, 00-665 Warszawa, Poland, E-mail: wiatr-ise.pw.edu.pl This work

A Model for SiGe MODFETs with Improved Large-Signal Quality and Frequency Range Ingmar Kallfass*, Marco Zeuner**, Ulf König**, Hermann Schumacher* and Thomas J. Brazil*** * Department of Electron Devices and Circuits, University of Ulm Albert-Einstein-Allee 39, 89081 Ulm, Germany ikall-ebs.e-technik.uni-ulm.de **DaimlerChrysler Research Centre Wilhelm-Runge-Strasse 11, 89013 Ulm, Germany ***Depart

A DESIGN APPROACH FOR SUB-HARMONIC GENERATION OR SUPPRESSION IN NON-LINEAR CIRCUITS F. Di Paolo, G. Leuzzi Dept. Electrical Engineering, University of L'Aquila; Monteluco di Roio, L'Aquila 67040, Italy ­ leuzzi-ing.univaq.it ABSTRACT A design approach for the generation or suppression of sub-harmonic frequencies in non-linear circuits under large-signal drive is described. A standard Harmonic-Bal

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A tiny and fully integrated differential VCO for LMDS application P. Cortese, M.Camiade and D. Domnesque United Monolithic Semiconductors ,RD 128, BP 46, 91401 Orsay Cedex, France Tel.: +33 1 69 33 06 27, Fax: +33 1 69 33 05 52, E-Mail : philippe.Cortese-ums-gaas.com A fully integrated GaAs HBT dual frequency VCO providing a high frequency 18 GHz signal but also a half-frequency 9 GHz signal to a