Ka-band Coplanar Low-Noise Amplifier Design with Power PHEMTs Sabine Long1, Laurent Escotte1, Jacques Graffeuil1, Philippe Fellon2 and Daniel Roques3 1 LAAS CNRS et Université Paul Sabatier, 7 Av. du Colonel Roche, 31077 Toulouse cedex 4, France e-mail : escotte-laas.fr, phone : 33 (0)5 61 33 64 56, fax : 33 (0) 5 61 33 69 69 2 United Monolithic Semiconductors, 91041 Orsay cedex, France 3 Alcatel

A Low-Voltage Fully-Integrated 4.5-6-GHz CMOS Variable Gain Low Noise Amplifier Ming-Da Tsai+, Ren-Chieh Liu*, Chin-Shen Lin+ and Huei Wang*+ Graduate Institute of Communication and * Dept. of Electrical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C. Phone: +886-2-23635251 ext.317 Fax:+886-2-23638247 e-mail:hueiwang-ew.ee.ntu.edu.tw GaAs-based chip is difficult to integrate with C

Dual Band Monolithic AGC Amplifier for Space Applications based on a commercial 0.2 µm PHEMT Technology Sonia Sotero1, Amparo Herrera1, Javier Cabo 2 1 University of Cantabria, Dpto. Ing. de Comunicaciones, Avnd. Los Castros s/n Santander, 39005, Spain, 34942200918 2 Alcatel Espacio, C/Einstein 7, 28760 Tres Cantos, Madrid, Spain Abstract -- This paper reports the design and measurement of a dua

An Integrated SiGe Dual-band Low Noise Amplifier for Bluetooth, HiperLAN and Wireless LAN Applications Mou Shouxian, Ma Jianguo, Yeo Kiat Seng, and Do Manh Anh Centre for Integrated Circuits & Systems, Nanyang Technological University, Singapore 639798 Abstract -- A bandpass low noise amplifier (LNA), which can simultaneously operate at two different frequency bands -- 2.35GHz-2.6GHz and 5GHz-6GHz

An Original SiGe Active Differential Output Power Splitter for Millimetre-wave Applications Christophe Viallon, Eric Tournier, Jacques Graffeuil and Thierry Parra LAAS-CNRS, 7 avenue du Colonel Roche, 31077 Toulouse cedex 4, France Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse, France Abstract -- This paper deals with an original design of an active power splitter featuring a di

New Large Signal Model of AlGaAs P-HEMT and GaAs MESFET Under Optical Illumination J.M. Zamanillo, C. Navarro, C. Pérez-Vega, J.A. García, A. Mediavilla and A. Tazón University of Cantabria - Communications Engineering Department (DICOM) Av. de los Castros s/n. 39005, Santander, Spain. E-mail: jose.zamanillo-unican.es As an extension of previous works in the optical -microwave interaction field, t

A 43-Gbps Lithium Niobate Modulator Driver Module R. S. Virk, M. O'Neal*, E. Camargo, R. Ragle*, S. Notomi M. Gentrup*, E. Franzwa*, G. Hicks*, T. Fukugawara** Fujitsu Compound Semiconductor, Inc. 2355 Zanker Road San Jose, CA 95131, USA e-mail: rvirk-fcsi.fujitsu.com *WJ Communications, Inc. 401 River Oaks Parkway San Jose, CA 95134, USA **Fujitsu Limited 1-1, Kamikodanaka 4-chome Nakahara -ku, K

Fabrication, Testing, and Lumped Element Modeling of Planar Heterostructure Barrier Varactors M. Saglam1 , E. Leo2 , M. Bozzi2 , L. Perregrini2 , M. Rodr¶ ³guez-Giron¶s1 , P. Arcioni2 , and H. L. Hartnagel1 e Darmstadt University of Technology, Inst. Microwave Engineering, Merckstr. 25, D-64283 Darmstadt, Germany e{mail: msaglam-hf.tu-darmstadt.de, girones-hf.tu-darmstadt.de, hartnagel-hf.tu-darms

Temperature-Dependent Analysis and RF-Model of 10Gbps VCSELs S. Nuttinck, E. Gebara*, M. Maeng and J. Laskar Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332, sn46-prism.gatech.edu * Quellan Inc., 250 14th street, Atlanta, GA 10Gbps Vertical Cavity Surface Emitting Lasers (VCSELs) are fully characterized and modeled at various temperatures of oper

Negative Uniaxial Optical Behaviour of Laminated Polarization Beam-splitters. A. Massaro*, A. Di Donato**, T. Rozzi Department of Electronics and Automatics, University of Ancona, Via Brecce Bianche, 60131 Ancona, e-mail: MassaroAle-libero.it*, a.didonato-ee.unian.it** In the construction of polarization beam-splitters (PBS) and switches a structure can be employed, that is based on the birefringe