DESIGN OF A MMIC GILBERT CELL WITH HEMT TECHNOLOGY Carlos Crespo, Javier Reina-Tosina, J. Ignacio Alonso and Félix Pérez Esc. Sup. de Ingenieros, Co. Descubrimientos s/n., 41092 Sevilla, Spain. ccrespo-us.es Dep. de Señales, Sistemas y Radiocomunicaciones, Universidad Politécnica de Madrid, Spain. ABSTRACT Design for broadband IMD optimization of a MMIC mixer based on a Gilbert Cell with HEMT

Micromachined Coplanar Millimeter Wave Band-Pass Filters G. Bartolucci(1), D. Neculoiu(2), M. Dragoman(3), F. Giacomozzi(4), R. Marcelli(5), A. Müller(3) (1) University of Roma "Tor Vergata", Dept. of Electronic Engineering Via di Tor Vergata 110, 00133 Roma, Italy Phone: +39 06 72593450; E-mail: bartolucci-eln.uniroma2.it (2)" Politehnica" University of Bucharest, Faculty of Electronics and Te

A FULLY INTEGRATED Ka-BAND VCO IN MMIC TECHNOLOGY FOR AUTOMOTIVE RADAR APPLICATIONS A. SION - M. CAMIADE - A. LYOUBI* - M. PRIGENT* UMS S.A.S., RD 128, BP 46, 91401 ORSAY CEDEX, France * IRCOM ­ CNRS , 7 rue Jules Valles, 19100 BRIVE, France tel : + 0033 169330627 Fax : 0033 169330552 E-mail : arnaud.sion-ums-gaas.com 100 kHz. The density Si is current dependant and increases when gate bias voltag

LNA DESIGN BY PARALLEL FETS D. Benvenuti**, M. Cicolani**, S. Pisa*, P. Tommasino*, A. Trifiletti* *Electronic Engineering Department, University of Rome "La Sapienza", Via Eudossiana 18, I-00184, Roma, ITALY. Phone: +39 6 44585679, Fax: +39 6 4742647, e-mail: pisa-die.ing.uniroma1.it. ** Alenia Marconi Systems, via Tiburtina km. 12.4, 00131 Rome, Italy e-mail: mcicolani-aleniasystems.finmeccanica

ANALYSIS AND DESIGN OF WAVEGUIDE PHOTONIC BAND-GAP DEVICES A. G. Perri Dipartimento di Elettrotecnica ed Elettronica, Politecnico di Bari, Laboratorio di Dispositivi Elettronici, Via E. Orabona 4, 70125, Bari, Italy Phone: +39 - 80 - 5963427/5963314 Fax: +39 - 80- 5963410 E-mail: perri-poliba.it ABSTRACT A model of one-dimensional Fully eched Waveguiding Photonic Band-Gap (FWPBG) structures, base

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Advanced MMIC Design for Significant Reduction of RF Module Cost Klaus Beilenhoff, Bernd Adelseck*, Martin Oppermann*, Pierre Quentin, Marc Camiade and Heinrich Daembkes United Monolithic Semiconductors S.A.S., Route Departementale 128 ­ BP 46, 91401 Orsay Cedex, France, Email: k.beilenhoff-ieee.org * EADS Deutschland GmbH, Wörthstrasse 58, D-89077 Ulm, Germany, Email: mailto:Bernd.Adelseck-sysde.

An Equivalent Circuit of Forward-biased HBT for Determination of Series Parameters of GaInP/GaAs HBTs Small-Signal Model Sami Bousnina, and Fadhel M. Ghannouchi Ecole Polytechnique de Montréal, Laboratoire Poly-Grames, 3333 Reine Marie, Suite R222, Montréal (Québec), H3V 1A2, CANADA. Tel: (514) 340 4711 ext 5989, Fax: (514) 340 5892. samibo-grmes.polymtl.ca ABSTRACT An equivalent circuit of forwa

A Study on the Development of New Process and the Fabrication of 0.1µm GaAs PHEMTs using Sidewall of SiN Film Woo-Yeon Hong, Ho-Young Cha, Seong-Cheol Hong, Dae-Hyun Kim *Jae-Hak Lee, *Seung-Won Paek, *Ki-Woong Chung and Kwang-Seok Seo School of Electrical Engineering and Computer Science, Seoul National University San 56-1 Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea Phone : +82-2-880-8642, FAX

Improved Electro-Static Discharge Performance of Metal-Insulator-Metal Capacitors on GaAs Y.Yun, M.Fukuda, P.Ersland, and Y.Anand M/A­COM 100 Chelmsford St., Lowell, MA 01853, U.S.A. yuny-macom.com The Electro-Static Discharge (ESD) failure of Metal-Insulator-Metal (MIM) capacitors accounts for the majority of GaAs MMIC ESD failures. In this work, the ESD Threshold Voltage (Eth) of the MIM capaci