PHYSICAL MODELLING OF SHORT GATELENGTH Si/SiGe n-MODFET L. Giguerre, F. Aniel, M. Enciso, H.J.Herzog* , U. König* , R. Adde Institut d'Electronique Fondamentale, Paris-Sud Universit, F-91405 Orsay,( France) Fax 0 33 169 15 40 90, e-mail: laurent.giguerre-ief.u-psud.fr *DaimlerChrysler Research Center, Wilhem-Runge-Str. 11, D-89081 Ulm, (Germany) ABSTRACT We present an investigation of the HF per

Numerical Analysis of Impact Ionization Effects on Turn-on Characteristics in GaAs MESFETs K. Horio, A. Wakabayashi and Y. Mitani Faculty of Systems Engineering, Shibaura Institute of Technology 307 Fukasaku, Saitama 330-8570, Japan (horio-sic.shibaura-it.ac.jp) ABSTRACT Effects of impact ionization of carriers on gate-lag or turn-on characteristics in GaAs MESFETs are studied by two-dimensional

A DC to 40GHz Low Cost Surface Mountable RF-VIATM Package Shigeki MORIOKA*1, Kiyotaka YOKOI *1, Katsuyuki YOSHIDA *2, Takayuki SHIRASAKI*2 *1:Metallized Package 2 Division, Mail address: 10-1 Kawai, Gamo-cho, Gamo-gun, Shiga 529-1595, JAPAN Telephone: +81-748-55-4977, Facsimile: +81-748-55-4968 Email: m-pkg2-kyocera.co.jp *2:Semiconductor Components group Design center, Mail address: 1-1 Yamashita

0-Level packaging techniques for flip-chip mounted MMICs W. De Raedt, S. Brebels, Ph. Monfraix*, Geert Carchon, Anne Jourdain, Harrie A.C. Tilmans IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium Tel: +32 16 281 405, Fax: +32 16 281 501, E-mail: deraedt-imec.be *Alcatel Space Industries, 26, avenue J.F. Champollion, 31037 Toulouse, France INTRODUCTION Currently, the thin film microwave multi-chip m

Development of Highly Integrated 3D Microwave - Millimeter Wave Radio Front-End System-on-Package (SOP) M.Tentzeris, J.Laskar, A.Sutono, C.­H. Lee, M.F. Davis, A.Obatoyinbo, K. Lim Packaging Research Center, School of ECE, Georgia Institute of Technology Yamacraw Design Center, Atlanta, GA 30332, U.S.A.; Abstract -- We present the development, implementation and measurement of a 3D-deployed RF fro

Silicon Packaging and RF Solder-free Interconnect for X-band SAR T/R Module Eric Saint-Etienne, Bruno Reig, François Deborgies, Jean-Pierre Ghesquiers, Daniel Roques, Gérard Le Meur*, Bernard Cogo and Yves Mancuso* Alcatel Space Industries, 26, avenue J.F. Champollion, BP 1187, 31037 Toulouse Cedex, France Tel: 33(0)5.34.35.58.41 ­ Fax : 33(0)5.34.35.69.47. ­ E-mail : daniel.roques-space.alcatel.f

GaAs HBT PA module design for CDMA handsets C. Joly, chris.joly_2-philips.com R. Keenan, J. Hug, J. Lucek, S. Ou, G. Bonaguide, S. Osman, A. Wagemans Philips Semiconductors, 171 Forbes Blvd, Mansfield MA 02048, USA ABSTRACT The paper describes common issues faced designing GaAs HBT Power Amplifiers for 2G CDMA handsets & how to solve them. Common issues developed are non-linear noise performance,

LATEST ADVANCES IN HIGH POWER SI MMIC Gerard Bouisse Motorola SPS-avenue du general Eisenhower-31000 Toulouse-France Abstract: During the past years Si MMIC have entered the cellular base station arena. It has been necessary to demonstrate the technical capabilities of these products , in terms of power and in terms of bandwidth/gain flatness. These two particular topics are essential in this mult

INVESTIGATIONS OF LINEARITY CHARACTERISTICS FOR LARGE-EMITTER AREA GaAs HBT POWER STAGES G. L. Madonna, M. Pfost, R. Schultheis and J. E. Mueller Infineon Technologies AG, Wireless Systems, Technology and Innovation Otto-Hahn-Ring 6, D-81730 Munich, Germany. E-mail: Gian-Luigi.Madonna-infineon.com ABSTRACT In this paper the linearity properties of large-emitter-area GaAs heterojunction bipolar tr

Microwave and DC Performance of AlGaN/GaN HEMTs Grown on Si using a New Growth Technique William Sutton, Egor Alekseev, Dimitris Pavlidis Department of Electrical Engineering and Computer Science, The University of Michigan Ann Arbor, Michigan 48109-2122, USA, http://www.eecs.umich.edu/dp-group Edwin Piner, Warren Weeks, Thomas Gehrke, Kevin Linthicum NITRONEX Corporation, 628 Hutton Street, Suite