A MONOLITHIC 5.8 GHZ POWER AMPLIFIER IN A 25 GHZ FT SILICON BIPOLAR TECHNOLOGY W. Simbürger *, W. Bakalski , D. Kehrer , H.D. Wohlmuth * M. Rest *, K. Aufinger *, S. Boguth *, A.L. Scholtz * Infineon Technologies, Corporate Research Otto-Hahn-Ring 6, D-81730 Munich, Germany Email: werner.simbuerger-infineon.com Technical University of Vienna Institute of Communications and Radio-Frequency Engine

Spice Thermal Subcircuit of Multifinger HBT derived from Ritz Vector Reduction Technique of 3D Thermal Simulation for electrothermal modeling D. Lopez, R.Sommet, R. Quéré AbstractThis paper deals with the integration of a reduced thermal model based on tree dimensional Finite Element (FE) thermal simulation into circuit simulator for accurate prediction of electrothermal behavior of power devices

Electro-Thermal Modelling of Very High Power Microwave Bipolar Junction Transistors Christopher J. Fagan 1, Christopher M. Snowden 2 1 Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, The University of Leeds, Leeds, LS2 9JT, UK. 2 Filtronic plc, The Waterfront, Salts Mill Road, Shipley BD18 3TT, UK Tel: +44 113 2332000, Fax: +44 113 2332032, e-mail: c_j_faga

SELF-CONSISTENT FULLY DYNAMIC ELECTRO-THERMAL SIMULATION OF POWER HBTS F. Cappelluti1 , F. Bonani1 , S. Donati Guerrieri1 , G. Ghione1 , C.U. Naldi1 , M. Peroni2 , A. Cetronio2 , R. Graffitti2 1 Dipartimento di Elettronica, Politecnico di Torino, Torino, Italy, bonani-polito.it 2 Alenia Marconi Systems, Roma, Italy, mperoni-amsjv.it ABSTRACT A new self-consistent dynamic electro-thermal model f

ON WAFER THERMAL INVESTIGATION OF GAAS-BASED MICROWAVE TRANSISTORS BY A THERMOELECTRIC SYSTEM M. Sannino*, A. Caddemi and N. Donato* *Dipartimento di Ingegneria Elettrica, Università di Palermo - Viale delle Scienze, 90128 Palermo, ITALY - e-mail: ndonato-oxygen.unime.it Dipartimento di Fisica della Materia e Tecnologie Fisiche Avanzate, Università di Messina Contrada Sperone, 31 - S. Agata, 981

Fully Physical Electro-Thermal CAD for Power FET Optimisation by Non Uniform Finger Spacing A. J. Panks , W. Batty+, S. David+, R. G. Johnson+ and C. M. Snowden+, Filtronic plc., The Waterfront, Salts Mill Road, Saltaire, Shipley, W. Yorks, BD18 3TT, UK. + Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK. Tel. +44 1274

HIGH FREQUENCY PROPERTIES OF Si/SiGe n-MODFETs: DEPENDENCE ON GATE LENGTH AND TEMPERATURE M. Enciso, F. Aniel, L. Giguerre, P. Crozat, R. Adde, M. Zeuner * , T. Hackbarth. * Institut d'Electronique Fondamentale, Paris-Sud University, F-91405 Orsay, France, Fax 0 33 169 15 40 90, e-mail: enciso-ief.u-psud.fr *DaimlerChrysler Research Center, Wilhem-Runge-Str. 11, D-89081 Ulm, Germany ABSTRACT The

CORRELATION BETWEEN THE RELIABILITY OF HEMT DEVICES AND THAT OF A COMBINED OSCILLATOR-AMPLIFIER MMIC D. Schreurs, W. De Raedt , R. Vandersmissen , B. Neuhaus , A. Beyer , and B. Nauwelaers K.U.Leuven, Div. ESAT-TELEMIC, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium E-mail: dominique.schreurs-esat.kuleuven.ac.be, Fax: +32-16-321986, Phone: +32-16-321821 IMEC, Div. MCP, Kapeldreef 75, B-3001 Leuve

NEW SOLID STATE TRANSISTOR BASED ON THE QUANTUM DOT SYSTEM V.G.Mokerov, Yu.V.Fedorov, L.E.Velikovski, M.Yu.Shcherbakova Center of Micro- and Nanoelectronics of IRE RAS 101999, Moscow, Russia, GSP-9, 11, Mokchovaya str., Phone: 7(095)203-15-35, fax. 7(095)203-84-14, e-mail: mok-mail.cplire.ru ABSTRACT Modulation doped N-AlGaAs/GaAs/InAs/GaAs/InAs/GaAs-heterostructures with quantum dots in device ch

QUASI-MONOLITHIC INTEGRATION TECHNOLOGY (QMIT) FOR POWER APPLICATIONS M. Joodaki1, T. Senyildiz, G. Kompa1, H. Hillmer2, T. Leinhos3, R. Kassing3 1 Dept. of High Frequency Engineering, University of Kassel, D-34121 Kassel, Germany 2 Dept. of Technological Electronics, University of Kassel, D-34132 Kassel, Germany 3 Dept. of Technological Physics, University of Kassel, D-34132 Kassel, Germany E-ma