Novel compact double balanced coplanar active mixer Application to a single chip MMIC receiver for satellite repeater JF. VILLEMAZET, E. ROGEAUX, D. ROQUES, JC. CAYROU, B. COGO, M. SOULARD, JL. CAZAUX ALCATEL SPACE INDUSTRIES, 26 Av JF.Champollion, 31037 TOULOUSE Cedex, FRANCE Jean-Francois.Villemazet-space.alcatel.fr ABSTRACT This paper proposes a new compact double balanced coplanar mixer suitab

High Power LDMOS technology for wireless infrastructure A.Litwin1, Q. Chen1, J. Johansson1, G. Ma2, L-A. Olofsson1, P. Perugupalli2 1 Ericsson Microelectronics, SE-164 81 Kista, Sweden, Andrej.Litwin-mic.ericsson.se 2 Ericsson Microelectronics, Phoenix, AZ ABSTRACT The progress in wideband cellular systems was followed by the development of the necessary transistor technology. This contribution

High Power HBT Technologies : Present and Trends D. Floriot*, S. Delage*, S. Piotrowicz*, E. Chartier *, P. Auxemery ** * Thales Research and Technologies, Fr Domaine de Corbeville 91404 Orsay Cedex France ** United Monolithic Semiconductor Domaine de Corbeville 91404 Orsay Cedex France Abstract The HBT technology is now mature and offers a great variety of RF products for telecom applications, s

HEMT STRUCTURES AND TECHNOLOGY ON GAAS AND INP FOR POWER AMPLIFICATION IN MILLIMETRE WAVE RANGE. D. Théron, Y. Cordier*, X. Wallart, S. Bollaert, M. Zaknoune, M. Boudrissa, B. Bonte, C. Gaquière, M. Rousseau, F. Dessenne, F. Mollot, A. Cappy, R. Fauquembergue and J.C. De Jaeger Institut d'Électronique et de Micro-électronique du Nord, UMR CNRS n° 8520, University of Lille Avenue Poincaré, B.P. 69

RF POWER PERFORMANCE OF PASSIVATED ALGAN/GAN HFETS GROWN ON SIC AND SAPPHIRE H. Leier, A. Wieszt, R. Behtash, H. Tobler, A. Vescan, R. Dietrich, A. Schurr, H. Sledzik*, JCH. Birbeck**, RS. Balmer** and T. Martin** DaimlerChrysler AG, Research and Technology, P. O. Box 2360, D-89013 Ulm, Germany phone:+49-731-505-2030 / fax: +49-731-505-4101 / e-mail: helmut.leier-daimlerchrysler.com + EADS Deutsch

EQUIVALENT-VOLTAGE DESCRIPTION OF LOW-FREQUENCY DISPERSIVE EFFECTS IN LARGE-SIGNAL FET MODELS A.Santarelli , G.Zucchelli , R.Paganelli , G.Vannini , F.Filicori DEIS - University of Bologna, Viale Risorgimento 2, 40136 Bologna, Italy. Dept. of Engineering, University of Ferrara, Via Saragat 1, 44100 Ferrara, Italy. ABSTRACT The paper introduces a simple and efficient approach for the m

NONLINEAR BEHAVIOR OF POWER HBT Woonyun Kim*, Sanghoon Kang**, Kyungho Lee**, Minchul Chung**, and Bumman Kim** *RFIC Design Team, System LSI Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Lee, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-711, Korea. Phone: +82-54-279-5584, Fax: +82-54-279-2903, E-mail: kwn-postech.ac.kr **Dept. of E. E. Eng. and MARC, POSTECH, San 31, Hyoja-Dong, Pohang, Kyu

Accurate estimation of layer temperature in PHEMT MMIC by photoconductance measurements L.Tocca1, A. Di Carlo 1, M. Berliocchi1, and P.Lugli1 M.Bartocci2,G.De Santis 2, G.Giolo2, L.Rossi2 and M.Gemma2 1 INFM and University of Rome "Tor Vergata", Department of Electronic Engineering , Rome-Italy 2 Elettronica S.p.A., Microwave Dept, V. Tiburtina Valeria km 13.700 00131 Rome-Italy destructive as th

ELECTRIC FIELD DEPENDENCY OF TRAPS IN MESFET/HEMT DEVICES J. Rodriguez-Tellez, N.T. Ali, T. Fernandez+, A. Mediavilla+, A. Tazon+ University of Bradford, Bradford, England. e-mail j.rodrigueztellez-bradford.ac.uk Etisalat College of Engineering, United Arab Emirates e-mail ntali-emirates.net.ae +Universidad de Cantabria, Santander, Spain. e-mail tomas-dicom.unican.es ABSTRACT A new measurement p

Carbon Doped InP/InGaAs Heterojunction Bipolar Transistors Grown By MOCVD P.M. DeLuca, B.E. Landini, and R.E. Welser Kopin Corporation, 695 Myles Standish Blvd. Taunton, MA 02780 Phone: (508) 824-6696, Fax (508) 824-6418, E-mail: pdeluca-kopin.com R.L. Pierson, J.C. Li and B. Brar Rockwell Scientific Corporation, 1049 Camino Dos Rios, Thousand Oaks, CA 91358 ABSTRACT InGaAs/InP heterojunction bip